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Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method
Jo, Seo-Hyeon,Lee, Sung-Gap,Lee, Young-Hie Springer 2012 NANOSCALE RESEARCH LETTERS Vol.7 No.1
<P>In this study, Pb(Zr<SUB>0.52</SUB>Ti<SUB>0.48</SUB>)O<SUB>3</SUB>/BiFeO<SUB>3 </SUB>[PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO<SUB>2</SUB>(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm<SUP>2 </SUP>and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10<SUP>-7 </SUP>A/cm<SUP>2</SUP>.</P>
Fabrication and Electrical Properties of PZT/BFO Multilayer Thin Films
Seo-Hyeon Jo,Sung-Pil Nam,이성갑,이승환,이영희,Young Gon Kim 한국전기전자재료학회 2011 Transactions on Electrical and Electronic Material Vol.12 No.5
Lead zirconate titanate (PZT)/ bismuth ferrite (BFO) multilayer thin films have been fabricated by the spin-coating method on Pt(200 nm)/Ti(10 nm)/SiO_2(100 nm)/p-Si(100) substrates using BiFeO_3 and Pb(Zr_(0.52)Ti_(0.48))O_3 metal alkoxide solutions. The PZT/BFO multilayer thin films show a uniform and void-free grain structure, and the grain size is smaller than that of PZT single films. The reason for this is assumed to be that the lower BFO layers play an important role as a nucleation site or seed layer for the formation of homogeneous and uniform upper PZT layers. The dielectric constant and dielectric losses decreased with increasing number of coatings, and the six-layer PZT/BFO thin film has good properties of 162 (dielectric constant) and 0.017 (dielectric losses) at 1 kHz. The remnant polarization and coercive field of three-layer PZT/BFO thin films were 13.86 μC/cm^2 and 37 kV/cm respectively.
Fabrication and Electrical Properties of PZT/BFO Multilayer Thin Films
Jo, Seo-Hyeon,Nam, Sung-Pil,Lee, Sung-Gap,Lee, Seung-Hwan,Lee, Young-Hie,Kim, Young-Gon The Korean Institute of Electrical and Electronic 2011 Transactions on Electrical and Electronic Material Vol.12 No.5
Lead zirconate titanate (PZT)/ bismuth ferrite (BFO) multilayer thin films have been fabricated by the spin-coating method on Pt(200 nm)/Ti(10 nm)/$SiO_2$(100 nm)/p-Si(100) substrates using $BiFeO_3$ and $Pb(Zr_{0.52}Ti_{0.48})O_3$ metal alkoxide solutions. The PZT/BFO multilayer thin films show a uniform and void-free grain structure, and the grain size is smaller than that of PZT single films. The reason for this is assumed to be that the lower BFO layers play an important role as a nucleation site or seed layer for the formation of homogeneous and uniform upper PZT layers. The dielectric constant and dielectric losses decreased with increasing number of coatings, and the six-layer PZT/BFO thin film has good properties of 162 (dielectric constant) and 0.017 (dielectric losses) at 1 kHz. The remnant polarization and coercive field of three-layer PZT/BFO thin films were 13.86 ${\mu}C/cm^2$ and 37 kV/cm respectively.
Characterization of Pb(Zr0.52Ti0.48)O3/BiFeO3 multilayer thin films prepared by a sol-gel method
Seo-Hyeon Jo 한양대학교 세라믹연구소 2012 Journal of Ceramic Processing Research Vol.13 No.5
Multiferroic Pb(Zr0.52Ti0.48)O3/BiFeO3 multilayer thin films were fabricated by the spin-coating method on Pt/Ti/SiO2/p-Si(100) substrates alternately using Pb(Zr0.52Ti0.48)O3 and BiFeO3 metal alkoxide solutions. The PZT/BFO multilayer thin films show the formation of layers and a change of lattice constant caused by different structure of each other. The coating and heating procedure was repeated several times to form Pb(Zr0.52Ti0.48)O3/BiFeO3 multilayer films. All films showed the typical XRD patterns of the perovskite polycrystalline structure without the presence of a second phase such as Bi2Fe4O3. Pb(Zr0.52Ti0.48)O3/ BiFeO3 multilayer films showed a uniform and small grain size rather than pure Pb(Zr0.52Ti0.48)O3 and BiFeO3 films. We think that the crystal growth of the upper BiFeO3 layers can be influenced by the lower Pb(Zr0.52Ti0.48)O3 layers, and choosing the initial Pb(Zr0.52Ti0.48)O3 layer or a seeding layer has controlled the microstructural behavior of the resultant film. Leakage current density of the Pb(Zr0.52Ti0.48)O3/BiFeO3 multilayer film was 5.74 × 10-6 A/cm2 at 150 kV/cm.