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Yoo, O.S.,Oh, J.,Kang, C.Y.,Lee, B.H.,Han, I.S.,Choi, W.H.,Kwon, H.M.,Na, M.K.,Majhi, P.,Tseng, H.H.,Jammy, R.,Wang, J.S.,Lee, H.D. Elsevier Sequoia 2008 Materials science & engineering. B, Advanced funct Vol.154 No.-
We demonstrated the effect of post-metallization annealing and Si interlayer thickness on Ge MOS capacitor on Ge-on-Si substrate with HfO<SUB>2</SUB>/TaN. Ge outdiffusion and oxygen interdiffusion were completely suppressed by thick Si interfacial layer. As a result, formation of insufficient low-k Ge oxides was effectively inhibited. It is confirmed that gate current of Si passivated Ge MOS was decreased by Si IL and decrease of gate current, J<SUB>g</SUB> is saturated after Si IL of 2nm. It was also observed that when Si IL is thick enough to restrict Ge outdiffusion, increase of J<SUB>g</SUB> is not due to the temperature-induced Ge outdiffusion but due to the partial crystallization of HfO<SUB>2</SUB> at higher annealing temperature.
Facile synthesis of Ag-ZnO core–shell nanostructures with enhanced photocatalytic activity
A.N. Kadam,D.P. Bhopate,V.V. Kondalkar,S.M. Majhi,C.D. Bathula,Anh-Vy Tran,이상화 한국공업화학회 2018 Journal of Industrial and Engineering Chemistry Vol.61 No.-
Ag-ZnO core–shell nanostructure (CSNS) was prepared via a facile wet chemical approach. Formation was certified by various characterization techniques. The surface plasmon band of Ag-ZnO CSNS was red-shifted. Photoluminescence quenching for Ag-ZnO CSNS was attributed to improved charge separation. Ag-ZnO CSNS exhibited ∼6 times higher photocatalytic activity than pristine ZnO and ∼4 times higher than TiO2 (P25). Such enhanced photocatalytic activity was attributed to synergistic effect, more charge separation, and higher surface area. Ag-ZnO CSNS also showed excellent photostability and reusability. Photocatalytic mechanism was discussed based on major reactive oxidative species such as OH and O2−.