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Direct search for features in the primordial bispectrum
Appleby, S.,Gong, J.O.,Hazra, D.K.,Shafieloo, A.,Sypsas, S. North-Holland Pub. Co 2016 Physics letters. Section B Vol.760 No.-
We study features in the bispectrum of the primordial curvature perturbation correlated with the reconstructed primordial power spectrum from the observed cosmic microwave background temperature data. We first show how the bispectrum can be completely specified in terms of the power spectrum and its first two derivatives, valid for any configuration of interest. Then using a model-independent reconstruction of the primordial power spectrum from the Planck angular power spectrum of temperature anisotropies, we compute the bispectrum in different triangular configurations. We find that in the squeezed limit at k~0.06 Mpc<SUP>-1</SUP> and k~0.014 Mpc<SUP>-1</SUP> there are marginal 2σ deviations from the standard featureless bispectrum, which meanwhile is consistent with the reconstructed bispectrum in the equilateral configuration.
Hazra, Purnima,Singh, S.K.,Jit, S. The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.1
The fabrication and characterization of a Si/ZnO thin film heterojunction ultraviolet photodiode has been presented in this paper. ZnO thin film of ~100 nm thick was deposited on <100> Silicon (Si) wafer by atomic layer deposition (ALD) technique. The Photoluminescence spectroscopy confirms that as-deposited ZnO thin film has excellent visible-blind UV response with almost no defects in the visible region. The room temperature current-voltage characteristics of the n-ZnO thin film/p-Si photodiodes are measured under an UV illumination of $650{\mu}W$ at 365 nm in the applied voltage range of ${\pm}2V$. The current-voltage characteristics demonstrate an excellent UV photoresponse of the device in its reverse bias operation with a contrast ratio of ~ 1115 and responsivity of ~0.075 A/W at 2 V reverse bias voltage.
Purnima Hazra,S. K. Singh,S. Jit 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.1
The fabrication and characterization of a Si/ZnO thin film heterojunction ultraviolet photodiode has been presented in this paper. ZnO thin film of ~100 nm thick was deposited on <100> Silicon (Si) wafer by atomic layer deposition (ALD) technique. The Photoluminescence spectroscopy confirms that as-deposited ZnO thin film has excellent visible-blind UV response with almost no defects in the visible region. The room temperature current-voltage characteristics of the n-ZnO thin film/p-Si photodiodes are measured under an UV illumination of 650 <W at 365 nm in the applied voltage range of ±2V. The current-voltage characteristics demonstrate an excellent UV photoresponse of the device in its reverse bias operation with a contrast ratio of ~ 1115 and responsivity of ~0.075 A/W at 2 V reverse bias voltage.
Neha Sharma,Sunanda Sharda,Dheeraj Sharma,Vineet Sharma,P. B. Barman,S.C. Katyal,Pankaj Sharma,S. K. Hazra 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.5
Steady state current-voltage characteristics of the amorphous (Se80Te20)98Y2 (Y = Ag, Bi, Ge, Cd) semiconductors at different temperatures are reported. The measurements were performed using direct-current voltage bias to understand the basic conductivity mechanism and to evaluate the impact of each substituent on electrical response. The space charge limited conduction mechanism, and the density of states near Fermi level have been calculated. The difference in electrical response due to different substitutions in the glassy matrix is analyzed.