Interface sulfur passivation using H₂S annealing for atomic-layer-deposited Al₂O₃ films on an ultrathin-body In_0.53Ga_0.47As-on-insulator

Jin, H.S.,Cho, Y.J.,Lee, S.M.,Kim, D.H.,Kim, D.W.,Lee, D.,Park, J.B.,Won, J.Y.,Lee, M.J.,Cho, S.H.,Hwang, C.S.,Park, T.J. New York] ; North-Holland 2014 APPLIED SURFACE SCIENCE - Vol.315 No.-

Atomic-layer-deposited Al<SUB>2</SUB>O<SUB>3</SUB> films were grown on ultrathin-body In<SUB>0.53</SUB>Ga<SUB>0.47</SUB>As substrates for III-V compound-semiconductor-based devices. Interface sulfur (S) passivation was performed with wet processing using ammonium sulfide ((NH<SUB>4</SUB>)<SUB>2</SUB>S) solution, and dry processing using post-deposition annealing (PDA) under a H<SUB>2</SUB>S atmosphere. The PDA under the H<SUB>2</SUB>S atmosphere resulted in a lower S concentration at the interface and a thicker interfacial layer than the case with (NH<SUB>4</SUB>)<SUB>2</SUB>S wet-treatment. The electrical properties of the device, including the interface property estimated through frequency dispersion in capacitance, were better for (NH<SUB>4</SUB>)<SUB>2</SUB>S wet-treatment than the PDA under a H<SUB>2</SUB>S atmosphere. They might be improved, however, by optimizing the process conditions of PDA. The PDA under a H<SUB>2</SUB>S atmosphere following (NH<SUB>4</SUB>)<SUB>2</SUB>S wet-treatment resulted in an increased S concentration at the interface, which improved the electrical properties of the devices.

protoplast-fusion에 依한 澱粉에서 Ethanol의 單段醱酵能 酵母 開發 : I. Characteristics of two yeast strains and conditions for the protoplast formation and reeneration as a preliminary step in interspecific protoplast-fusion I. Interspecific Protoplast-fusion 을 爲한 酵母菌林의 諸特性과 Protoplast 調製 및 Regeneration 條件

吳秉夏,黃殷成,李炯周,李啓瑚,朴官和,張海東,徐鉉昌 서울大學校農科大學 1984 서울대농학연구지 Vol.9 No.1

澱粉으로 부터의 alcohol 醱酵能을 增進시키기 爲하여 澱粉糖化性 菌株인 Saccharomyces diastaticus와 優秀한 alcohol 醱酵性 菌株인 Saccharomyces uvarum을 母菌株로 하여 이들간의 同屬異種間 原形質融合(interspecific protoplast fusion)을 通한 優秀한 澱粉醱酵 性 alcohol 生産性 菌株를 새로이 開發할 目的에서 다음과 같은 一漣의 實驗結果를 얻었다. S. diastaticus의 醱酵液과 S. diastaticus+S. uvarum 混合醱酵液의 風味特性등을 確認하였다. 風味成分 抽出은 methylene chloride와 diethylether를 가지고 neutral flavor fraction과 acidic flavor fraction으로 나누었고 gas chromatography를 通하여 同定 및 定量하였다. Neutral flavor fraction의 경우 S. diastaticus+S. uvarum 混合醱酵液이 S. diastaticus 醱酵液보다, ester成分中에서는 ethyl acetate와 ethyl undecanoate가 더 많았고, alcohol 成分中에서는 n-propanol과 n-butanol이 더 많았다. Acidic flavor fraction의 경우 C??~C?? fatty acid가 同定 및 定量되었는데 S. diastaticus+S. uvarum 混合醱酵液이 S. diastaticus 醱酵液보다 lauric acid, caprylic acid, capric acid 含量이 두드러지게 많았다. S. diastaticus의 glucoamylase 生産性, glucoamylase의 分離 精製, 酵素力價 그리고 酵素學的 特性에서 optimum pH는 5.0, optimum temperature는 55℃ 이었다. S. diastaticus와 S. uvarum을 母菌株로 이들 간의 protoplast fusion을 위한 基礎的인 硏究로서 두 菌株의 諸特性과 protoplast調製의 最適條件을 決定하고 protoplast의 regeneration 條件의 確立을 도모하였다.두 菌의 生育曲線에서 모두 培養開始 7~8 時間만에 對數期 中期에 到達되었으므로 protoplast 調製는 이 時期의 細胞를 쓰기로 하였다. Generation time은 S. diastaticus가 1.04, S. uvarum이 1.38 時間이었다. 細胞의 크기는 S. diastaticus 44.10?㎛³, S. uvarum 99.67㎛³로 S. uvarum이 2倍나 컸다. DNA 含量은 細胞 當 S. diastaticus 44.3fg, S. uvarum 37.6fg이었다. 30% glucose 및 soluble starch에 대한 두 菌株의 ethanol 醱酵能은 glucose에 對하여 S. uvarum 11.4%, S. diastaticus 8.9% 이었고 soluble starch에 對하여는 S. diastaticus 만이 6.9%이었다. 두 菌株는 generation time, 細胞크기 및 DNA 含量 等으로 보아 diploid strain임을 알 수 있었고, 融合株 選拔을 위한 marker 로는 Sacch. uvarum의 melibiose 資化能의 차이를 利用할 수 있음을 밝혔다. Protoplast의 調製에는 β-glucuronidase와 Zymoyase를 使用하였는데 두 酵素 反應最適條件은 β-glucuronidase는 pH 8.0에서 10% 濃度의 溶液으로, Zymolyase는 pH7.5에서 20㎛/ml의 濃度의 溶液으로 하여 모두 70分間 處理하는 것으로 決定하였으나 이 정도의 處理時間에서는 protoplast가 극히 不安定하게 되어 regeneration frequency가 떨어지는 것을 確認하였으며, 特히 Zymolyase 處理로 얻어진 protoplast의 regeneration率이 낮은 것은 Zymolyase中에 不純物로 微量 混在한 protease가 protoplast의 노출된 membrane-bound protein을 分解함으로써 protoplast를 破壞시키기 때문인 것으로 추측되었다. 融合實驗에 利用할 수 있을 정도의 regeneration frequency를 얻기 위해서는 Zymolyase를 45分間 處理하여 얻은 protoplast를 1.5%의 polyvinylpyrrolicone이 加해진 OYPD培地에서 重層法으로 展開하여 regeneration시키는 것이 좋은 것으로 판명되었다. As preliminary steps of protoplast fusion between Saccharomyces diastaticus and S. uvarum to develop a fusant of higher ethanol production from starch, characteristics of the two presumptive parent strains, optimal conditions for protoplast preparation and conditions for highrer regeneration frequency were investigated. To determine flavor characteristics of the parent strains, neutral and acidic flavor fractions were extracted from liquids fermented by S. diastaticus and S. diastaticus + S. uvarum with methylene chloride and diethly ether. The liquid by the mixed culture produced more ethly acetate, ethyl undecanoate, n-propanol, n-butanol, lauric acid, caprylic acid and capric acid than that by S. diastaticus. Glucoamylase from S. diastaticus was purified and activity, productivity, and characteristics were determined. Optimum conditions for the enzyme were pH 5.0 and 55℃. The two strains reached logarithmic phase in 7-8h during growth and the generation time was 1.04 in S. diastaticus and 1.38 in S. uvarum. Cell size and DNA content per cell of S. diastaticus were 44.10㎛³and 44.3 fg, and for S. uvarum, 99.67㎛³and 37.6fg. Ethanol productivities of S. diastaticus were 8.9% from 30% glucose and 6.9% from 30% starch and 11.4% from glucose with S. uvarum. Through determination of generation time, cell size, and DNA content per cell, both strains appeared as diploids, and differences in assimilability of melibiose and soluble starch of the two strains were selected as markers to determine the fusant. The optimal condition for protoplast formation was treatment of both strains with 10% ß-glucuronidase at pH 8.0 or 20㎍/ml Zymolyase at pH 7.5 for 70 min. While the regeneration frequencies were very low at 70min exposure to Zymolyase because of the instability of protoplasts, the yeasts treated for 45min were better for regeneration. The regeneration frequencies were also enhanced by 3-6 times when the regeration was carried out with 1.5% polyvinylpyrrolidone which stabilized protoplasts.

세관 양광주 방전에서 플라즈마 확산의 완전 해

김동준,정종문,김정현,황하청,정재윤,조윤희,임현교,구제환,최은하,조광섭,Jin, D.J.,Jeong, J.M.,Kim, J.H.,Hwang, H.C.,Chung, J.Y.,Cho, Y.H.,Lim, H.K.,Koo, J.H.,Choi, E.H.,Cho, G.S. 한국진공학회 2010 Applied Science and Convergence Technology Vol.19 No.1

관경이 수 mm인 세관 램프 내부에서 플라즈마의 확산을 조사하기 위하여 이극성(ambipolar) 확산방정식을 해하였다. 반경 방향의 확산에 의한 유리관 벽에서의 플라즈마 소멸 특성시간은 $\tau_r\;=\;(r_0/2.4)^2/D_a$로 주어진다. 반경 $r_0{\sim}1\;mm$이고 이극성 확산계수 $D_a{\sim}0.01\;m^2/s$ 이면, $\tau_r{\sim}17\;{\mu}s$이다. 이는 램프의 교류전원 구동에서 플라즈마를 유지하기 위한 구동 최소 주파수 ~30 kHz에 해당한다. 고전압이 인가되는 전극부에 발생한 고밀도의 플라즈마가 양광주로 확산되는 특성시간은 $\tau_z{\sim}0.1\;s$이다. 고밀도 플라즈마 경계에서의 시간에 대한 확산속도는 $t{\sim}10^{-6}\;s$일 때 $u_D{\sim}10^2\;m/s$이고, $t{\sim}10^{-3}\;s$이면 그 속도는 $u_D{\sim}1\;m/s$로 느려진다. 따라서 램프 길이 ~1 m에 대하여 전극부에서 생성된 고밀도 플라즈마가 양광주 전체로 확산되는 시간은 수 초가 걸린다. The ambipolar diffusion equation has been solved in a fine-tube lamp of a few mm in diameter. In the diffusion of radial direction, the plasma diffuses and vanishes away at the glass wall by recombination with the characteristic time of plasma loss is given by $\tau_r\;=\;(r_0/2.4)^2/D_a$. With the radius $r_0{\sim}1\;mm$ and the ambipolar diffusion coefficient $D_a{\sim}0.01\;m^2/s$, the vanishing time is calculated $\tau_r{\sim}10\;{\mu}s$ which corresponds to the least value of frequency 30 kHz for the sustaining the plasma in the operation of high voltage AC-power. In the diffusion of longitudinal z-direction, a high density plasma generated at the area of a high voltage electrode, diffuses into the positive column with the characteristic time $\tau_z{\sim}0.1\;s$. The plasma diffusion velocity at the boundary of high density plasma is $u_D{\sim}10^2\;m/s$ at the time $t{\sim}10^{-6}$ s and the diffusion velocity becomes slow as $u_D{\sim}1\;m/s$ at $t{\sim}10^{-3}\;s$. Therefore, for the long lamp of 1 m, it takes about several seconds for the high density plasma at the area of electrode to diffuse through the whole positive column space.

First molecular cloning and gene expression analysis of a teleost CD200 (OX-2) glycoprotein from rock bream, Oplegnathus fasciatus

Hwang, S.D.,Kim, J.W.,Kim, M.C.,Kim, D.H.,Park, C.I. Academic Press 2013 Fish & shellfish immunology Vol.34 No.1

CD200 plays an important role in delivering an immunoregulatory signal to the immune system through interaction with its receptor. However, CD200 has not been characterized and its function in teleosts is unknown. In this study, the rock bream (Oplegnathus fasciatus) CD200 gene (RbCD200) was cloned and its expression profile was analyzed after infection with Edwardsiella tarda, Streptococcus iniae or red seabream iridovirus (RSIV). The coding region of RbCD200 cDNA was 855 bp, encoding 284 amino acid residues. The gene consisted of two extracellular Ig-like domains and a transmembrane domain. RbCD200 was highly expressed in the brain, erythrocytes, intestine and stomach of healthy rock bream. In the spleen, RbCD200 gene expression was down-regulated until 48 h after E. tarda exposure, except at 12 h RbCD200 gene expression was down-regulated then up-regulated at 12 h and 24 h after infection with S. iniae and RSIV, respectively. In the whole kidney, the RbCD200 gene was down-regulated in response to infection with E. tarda and S. iniae. However, RSIV infection increased RbCD200 gene expression in whole kidney until 48 h. These results suggest that RbCD200 is differentially expressed in the spleen and whole kidney after infection with different pathogens.

인두편도염 환자와 보균자에서 분리한 Streptococcus pyogenes의 T-protein serotyping 및 항균제 감수성

이영희,황규잠,주영란,박강수,이광준,엄영길,배송미,차성호 국립보건연구원 1998 국립보건원보 Vol.35 No.-

Dipeptidyl petidase-IV inhibitor (gemigliptin) inhibits tunicamycin-induced endoplasmic reticulum stress, apoptosis and inflammation in H9c2 cardiomyocytes

Hwang, H.J.,Jung, T.W.,Ryu, J.Y.,Hong, H.C.,Choi, H.Y.,Seo, J.A.,Kim, S.G.,Kim, N.H.,Choi, K.M.,Choi, D.S.,Baik, S.H.,Yoo, H.J. North-Holland 2014 Molecular and cellular endocrinology Vol.392 No.1

The direct effects of dipeptidyl peptidase-IV (DPP-IV) inhibitors on endoplasmic reticulum (ER) stress-induced apoptosis and inflammation in cardiomyocytes have not been elucidated. H9c2 cell viability, which was reduced by tunicamycin, was increased after DPP-IV inhibitor gemigliptin treatment. Gemigliptin significantly decreased the tunicamycin-mediated increase in glucose regulated protein 78 (GRP78) expression and ER stress-mediated signaling molecules such as protein kinase RNA-like endoplasmic reticulum kinase (PERK)/C-EBP homologous protein (CHOP) and inositol-requiring enzyme 1α (IRE1α)/c-Jun N-terminal kinase (JNK)-p38. Furthermore, gemigliptin effectively induced Akt phosphorylation in a dose-dependent manner. Using flow cytometry and Hoechst staining, we showed that treatment with Akt inhibitor significantly blocked the anti-apoptotic effects mediated by gemigliptin. The reduction in tunicamycin-induced GRP78 level and PERK/CHOP pathway activity by gemigliptin was reversed after treatment with Akt inhibitor. In conclusion, gemigliptin effectively inhibited ER stress-induced apoptosis and inflammation in cardiomyocytes via Akt/PERK/CHOP and IRE1α/JNK-p38 pathways, suggesting its direct protective role in cardiovascular diseases.

O-free polyacrylonitrile doping to improve the J_c(B) and H_c2 of MgB₂ wires

Hwang, S.M.,Sung, K.,Choi, J.H.,Kim, W.,Joo, J.,Lim, J.H.,Kim, C.J.,Park, Y.S.,Kim, D.H. North-Holland 2010 Physica. C, Superconductivity Vol.470 No.20

We selected polyacrylonitrile (PAN, -[C<SUB>3</SUB>H<SUB>3</SUB>N]-) as an O-free organic dopant and fabricated C-doped MgB<SUB>2</SUB> wires by in situ and powder-in-tube techniques. 0-5 wt.% PAN powders were uniformly mixed with B powder using a liquid mixing method. The precursor powders were mixed with Mg powder, filled into Fe tubes, and then drawn into wires. Sintering was performed at 900<SUP>o</SUP>C for 1h in a flowing Ar gas. The PAN doping decreased the critical temperature (T<SUB>c</SUB>) and a-axis lattice parameter, but significantly improved the critical current density (J<SUB>c</SUB>) in high fields, upper critical field (H<SUB>c2</SUB>), and irreversibility field (H<SUB>irr</SUB>) performances. These results are attributed to the replacement of B sites with C by the PAN doping. Furthermore, as expected, the MgO amount did not increase as the doping content increased. The J<SUB>c</SUB> of the PAN-doped MgB<SUB>2</SUB> wires was more than one order of magnitude higher than that of the undoped MgB<SUB>2</SUB> wire at 5K and 6.6T (1.46-3.82kA/cm<SUP>2</SUP> vs. 0.11kA/cm<SUP>2</SUP>).

오픈소스 LinuxCNC를 사용한 듀얼서보모터 H-TYPE 공작기계 Test-bed 구축

장현수(H. S. Jang),강유수(Y. S. Kang),황준호(J. H. Hwang),서영호(Y. H. Seo),최인휴(I. H. Choi),김병희(B. H. Kim) 한국생산제조학회 2021 한국생산제조시스템학회 학술발표대회 논문집 Vol.2021 No.7

Structural and optical properties of solvothermally synthesized ZnS nano-materials using Na₂S.9H₂O and ZnSO₄.7H₂O precursors

Hwang, B.H.,Xu, H.,Park, S.J.,Choi, S.E.,Nahm, S.,Hong, Y.W.,Paik, J.H.,Shin, T.H.,Kang, J.S. Ceramurgica ; Elsevier Science Ltd 2016 CERAMICS INTERNATIONAL Vol.42 No.10

Hexagonal wurtzite (HWZ) ZnS nanorods were formed in specimens with a S/Zn ratio of 1.3, synthesized at temperatures ≥200<SUP>o</SUP>C in a solution containing 80vol% water and 20vol% of ethylenediamine (EN). In contrast, HWZ ZnS nanoparticles were formed in specimens synthesized at temperatures lower than 200<SUP>o</SUP>C. Also, cubic zinc blende (CZB) ZnS nanoparticles were formed in specimen synthesized in water. The absorption peak for the HWZ nanorods and CZB ZnS nanoparticles was at wavelength of 325nm and 339nm, respectively, indicating that the band gap energy of the former is larger than that of the latter. Moreover, the HWZ ZnS exhibited two emission peaks at 474nm and 580nm. The peak at 474nm is attributed to Zn vacancies but the origin of the peak at 580nm remains undetermined. Since the intensity of the emission peak at 580nm was significantly higher for the HWZ nanoparticles than for nanorods, this peak might be associated with defects in the HWZ ZnS nanoparticles.

Effects of O3 and H2O as oxygen sources on the atomic layer deposition of HfO2 gate dielectrics at different deposition temperatures

Lee, S.,Kim, H.,Lee, J.,Yu, I. H.,Lee, J. H.,Hwang, C. Royal Society of Chemistry 2014 Journal of Materials Chemistry C Vol.2 No.14

Variations in the growth behavior, physical and electrical properties, and microstructure of the atomic layer deposited (ALD) HfO2 gate dielectrics were examined with two types of oxygen sources: O-3 and H2O for the given Hf-precursor of Hf[N(CH3)(C2H5)](4). The ALD temperature windows for O-3 and H2O were 240-320 degrees C and 200-280 degrees C, respectively, with the growth rate of HfO2 using O-3 being higher than that of the films using H2O within the ALD window. While the film density of HfO2 using O-3 decreased, the film density of HfO2 using H2O increased with the decreasing ALD temperature. As the deposition temperature decreased, the amount of impurity in the HfO2 film with the O-3 oxidant increased due to the insufficient reaction, which led to the crystallization of the HfO2 film into the tetragonal structure after the post-deposition annealing at 600 degrees C. The films with a lower density and a higher carbon-impurity concentration retained the portion of the tetragonal phase (similar to 30%) to the highest annealing temperature of 1000 degrees C. However, the HfO2 films grown at 200 degrees C with H2O showed the best electrical performance, which could be ascribed to the highest density, low impurity concentration, and negligible involvement of the interfacial low dielectric layer.