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RISS 인기검색어
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- 저자 : Rastak, N. (검색결과 2 건)
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Zá,bori, J.,Rastak, N.,Yoon, Y. J.,Riipinen, I.,Strö,m, J. Copernicus GmbH 2015 Atmospheric Chemistry and Physics Vol.15 No.23
<P>Abstract. The Arctic is one of the most vulnerable regions affected by climate change. Extensive measurement data are needed to understand the atmospheric processes governing this vulnerability. Among these, data describing cloud formation potential are of particular interest, since the indirect effect of aerosols on the climate system is still poorly understood. In this paper we present, for the first time, size-resolved cloud condensation nuclei (CCN) data obtained in the Arctic. The measurements were conducted during two periods in the summer of 2008: one in June and one in August, at the Zeppelin research station (78°54´ N, 11°53´ E) in Svalbard. Trajectory analysis indicates that during the measurement period in June 2008, air masses predominantly originated from the Arctic, whereas the measurements from August 2008 were influenced by mid-latitude air masses. CCN supersaturation (SS) spectra obtained on the 27 June, before size-resolved measurements were begun, and spectra from the 21 and 24 August, conducted before and after the measurement period, revealed similarities between the 2 months. From the ratio between CCN concentration and the total particle number concentration (CN) as a function of dry particle diameter (Dp) at a SS of 0.4 %, the activation diameter (D50), corresponding to CCN / CN = 0.50, was estimated. D50 was found to be 60 and 67 nm for the examined periods in June and August 2008, respectively. Corresponding D50 hygroscopicity parameter (κ) values were estimated to be 0.4 and 0.3 for June and August 2008, respectively. These values can be compared to hygroscopicity values estimated from bulk chemical composition, where κ was calculated to be 0.5 for both June and August 2008. While the agreement between the 2 months is reasonable, the difference in κ between the different methods indicates a size dependence in the particle composition, which is likely explained by a higher fraction of inorganics in the bulk aerosol samples. </P>
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Skin electronics from scalable fabrication of an intrinsically stretchable transistor array
Wang, Sihong,Xu, Jie,Wang, Weichen,Wang, Ging-Ji Nathan,Rastak, Reza,Molina-Lopez, Francisco,Chung, Jong Won,Niu, Simiao,Feig, Vivian R.,Lopez, Jeffery,Lei, Ting,Kwon, Soon-Ki,Kim, Yeongin,Foudeh, Ami Macmillan Publishers Limited, part of Springer Nat 2018 Nature Vol.555 No.7694
Skin-like electronics that can adhere seamlessly to human skin or within the body are highly desirable for applications such as health monitoring, medical treatment, medical implants and biological studies, and for technologies that include human–machine interfaces, soft robotics and augmented reality. Rendering such electronics soft and stretchable—like human skin—would make them more comfortable to wear, and, through increased contact area, would greatly enhance the fidelity of signals acquired from the skin. Structural engineering of rigid inorganic and organic devices has enabled circuit-level stretchability, but this requires sophisticated fabrication techniques and usually suffers from reduced densities of devices within an array. We reasoned that the desired parameters, such as higher mechanical deformability and robustness, improved skin compatibility and higher device density, could be provided by using intrinsically stretchable polymer materials instead. However, the production of intrinsically stretchable materials and devices is still largely in its infancy: such materials have been reported, but functional, intrinsically stretchable electronics have yet to be demonstrated owing to the lack of a scalable fabrication technology. Here we describe a fabrication process that enables high yield and uniformity from a variety of intrinsically stretchable electronic polymers. We demonstrate an intrinsically stretchable polymer transistor array with an unprecedented device density of 347 transistors per square centimetre. The transistors have an average charge-carrier mobility comparable to that of amorphous silicon, varying only slightly (within one order of magnitude) when subjected to 100 per cent strain for 1,000 cycles, without current–voltage hysteresis. Our transistor arrays thus constitute intrinsically stretchable skin electronics, and include an active matrix for sensory arrays, as well as analogue and digital circuit elements. Our process offers a general platform for incorporating other intrinsically stretchable polymer materials, enabling the fabrication of next-generation stretchable skin electronic devices.
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