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Sensorless control methods are generally used in motor control for home-appliances because of the material cost and manufactureing standard restrictions. The current model-based control algorithm is mainly used for PMSM sensorless control in the home-appliance industry. In this control method, the rotor position is estimated by using the d-axis and q-axis current errors between the real system and a motor model of the position estimator. As a result, the accuracy of the motor model parameters are critical in this control method. A mismatch of the PMSM parameters affects the speed and torque in low speed, steadystate responses. Rotor position errors are mainly caused by a mismatch of the stator resistance. In this paper, a stator resistance compensation algorithm is proposed to improve sensorless control performance. This algorithm is easy to implement and does not require a modification of the motor model or any special interruptions of the controller. The effectiveness of the proposed algorithm is verified through experimental results.
The effects of trialkylborane on the stereochemistry of ketone reduction with lithium borohydride were studied for the four representative ketones, namely 4-t-butylcyclohexanone, 2-methylcyclohexanone, norcamphor, and camphor. The presence of trialkylborane increased the yields of the less stable alcohols. For example, in the presence of tri-s-butylborane, 42 % yield of cis-4-t-butylcyclohexanol was observed whereas only 8 % yield with lithium borohydride alone in the reduction of 4-t-butylcyclohexanone. The in situ formation of lithium trialkylborohydride, by the hydride transfer from lithium trialkoxyborohydride to trialkylborane, was demonstrated as a possible mechanism for the catalytic effect of trialkylborane.
This paper examines the electrical characteristic of single oxide layer due to various diffusion conditions, substrate orientations, substrate resistivity and gas atmosphere in a diffusion furnace. The oxide quality was examined through the capacitance-voltage characteristic due to the annealing time after oxidation process, and the capacitance-voltage characteristics of the single oxide layer by will be described via semiconductor device simulation.