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Nguyen, Huong Thi Thanh,Balaji, Nagarajan,Park, Cheolmin,Triet, Nguyen Minh,Le, Anh Huy Tuan,Lee, Seunghwan,Jeon, Minhan,Oh, Donhyun,Dao, Vinh Ai,Yi, Junsin Institute of Physics 2017 Semiconductor science and technology Vol.32 No.2
<P>Excellent surface passivation and anti-reflection properties of double-stack layers is a prerequisite for high efficiency of n-type c-Si solar cells. The high positive fixed charge (<I>Q</I> <SUB>f</SUB>) density of N-rich hydrogenated amorphous silicon nitride (a-SiN<SUB>x</SUB>:H) films plays a poor role in boron emitter passivation. The more the refractive index (<I> <B>n</B> </I>) of a-SiN<SUB>x</SUB>:H is decreased, the more the positive <I>Q</I> <SUB>f</SUB> of a-SiN<SUB>x</SUB>:H is increased. Hydrogenated amorphous silicon oxynitride (SiON) films possess the properties of amorphous silicon oxide (a-SiO<SUB>x</SUB>) and a-SiN<SUB>x</SUB>:H with variable <I> <B>n</B> </I> and less positive <I>Q</I> <SUB>f</SUB> compared with a-SiN<SUB>x</SUB>:H. In this study, we investigated the passivation and anti-reflection properties of Al<SUB>2</SUB>O<SUB>3</SUB>/SiON stacks. Initially, a SiON layer was deposited by plasma enhanced chemical vapor deposition with variable <I> <B>n</B> </I> and its chemical composition was analyzed by Fourier transform infrared spectroscopy. Then, the SiON layer was deposited as a capping layer on a 10 nm thick Al<SUB>2</SUB>O<SUB>3</SUB> layer, and the electrical and optical properties were analyzed. The SiON capping layer with <I> <B>n</B> </I>?=?1.47 and a thickness of 70 nm resulted in an interface trap density of 4.74?=?10<SUP>10</SUP> cm<SUP>−2</SUP> eV<SUP>−1</SUP> and <I>Q</I> <SUB>f</SUB> of −2.59?=?10<SUP>12</SUP> cm<SUP>−2</SUP> with a substantial improvement in lifetime of 1.52 ms after industrial firing. The incorporation of an Al<SUB>2</SUB>O<SUB>3</SUB>/SiON stack on the front side of the n-type solar cells results in an energy conversion efficiency of 18.34% compared to the one with Al<SUB>2</SUB>O<SUB>3</SUB>/a-SiN<SUB>x</SUB>:H showing 17.55% efficiency. The short circuit current density and open circuit voltage increase by up to 0.83 mA cm<SUP>−2</SUP> and 12 mV, respectively, compared to the Al<SUB>2</SUB>O<SUB>3</SUB>/a-SiN<SUB>x</SUB>:H stack on the front side of the n-type solar cells due to the good anti-reflection and front side surface passivation.</P>
The S-Shaped Relationship Between Internationalization and Performance: Empirical Evidence from Laos
Tu Anh PHAN,Thuy Thi Kim NGUYEN,Triet Minh PHAN 한국유통과학회 2020 The Journal of Asian Finance, Economics and Busine Vol.7 No.11
The purpose of this study is to investigate the impact of internationalization on the business performance of firms in Laos as a transition economy. Using a panel dataset collected by the World Bank for 285 firms during the period 2009, 2012, and 2016 in the service and manufacturing industries, the two-steps Heckman regression results found robust evidence for the fact that the S-curve tie exists between the degree of internationalization and business performance of firms in Laos while controlling other factors. Specifically, if firms have a degree of internationalization lower than 0.4374, they will suffer losses due to the high cost of preparing for phase 1 which is market penetration. Then, when the degree of internationalization continues to increase from 0.4374 to 0.9131, firms will gain benefits from internationalization (phase 2), however, these benefits will deteriorate when the degree of internationalization is greater than 0.9131 (phase 3), meaning that firms will no longer be able to exploit economies of scale or advantages in target markets, or product cycles will fall into a state of decline. Interestingly, we also found that firms with a high concentration level of ownership and internationalization activities may achieve better performance than those with a low concentration of ownership and one which carried out internationalization activities.
Vo Thi Tuyet Mai,Nguyen Anh Triet,Le Thi Phuong Ngoc,Nguyen Thanh Long 경남대학교 기초과학연구소 2020 Nonlinear Functional Analysis and Applications Vol.25 No.4
In this paper, we consider the initial boundary value problem for a nonlin-ear Kirchho-Carrier-Love equation. At rst, by combining the linearization method, the Faedo-Galerkin method and the weak compactness method, we prove the local existence anduniqueness of a weak solution. Next, by constructing Lyapunov functional, we establish a blow-up result for solutions with a negative initial energy and give a sucient condition to obtain the exponential decay of weak solutions.
Ngoc, Le Thi Phuong,Quynh, Doan Thi Nhu,Triet, Nguyen Anh,Long, Nguyen Thanh Department of Mathematics 2019 Kyungpook mathematical journal Vol.59 No.4
In this paper, we consider the Robin-Dirichlet problem for a nonlinear wave equation of Kirchhoff-Carrier type with a viscoelastic term. Using the Faedo-Galerkin method and the linearization method for nonlinear terms, the existence and uniqueness of a weak solution are proved. An asymptotic expansion of high order in a small parameter of a weak solution is also discussed.