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- 저자 : Muthitamongkol, Pennapa (검색결과 2 건)
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Vora-ud, Athorn,Kumar, Manish,Jin, Su bong,Muthitamongkol, Pennapa,Horprathum, Mati,Thaowonkaew, Somporn,Chao-moo, Watchara,Thanachayanont, Chancana,Thang, Phan Bach,Seetawan, Tosawat,Han, Jeon Geon Elsevier 2018 Journal of alloys and compounds Vol.763 No.-
<P><B>Abstract</B></P> <P>Optimization of substrate heating during sputtering processes is essential to obtain desired microstructures of deposited thin films, as it provides the required energy flux during the nucleation and growth. In this work, Ge<SUB>2</SUB>Sb<SUB>2</SUB>Te<SUB>5</SUB> thin films were prepared by a pulsed-DC magnetron sputtering process at optimized plasma conditions (pulsed frequency and pulse reversal time). The effect of substrate heating, in temperature range of 250–450 °C, was systematically investigated on the process throughput and various properties i.e. microstructure, morphology, atomic composition, carrier concentration, mobility and Seebeck coefficient of deposited films. The substrate heating was found to be required to obtain films in cubic crystalline phase. Through the optimization of substrate temperature, process throughput and surface properties, electrical properties as well as thermoelectric power factors were enhanced. The maximum power factor value of thin films was achieved as 0.77 mW m<SUP>–1</SUP> K<SUP>–2</SUP> for the substrate temperature as 400 °C.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Ge<SUB>2</SUB>Sb<SUB>2</SUB>Te<SUB>5</SUB> thin films were successfully microstructural controlled by substrate heating. </LI> <LI> Microstructural of Ge<SUB>2</SUB>Sb<SUB>2</SUB>Te<SUB>5</SUB> thin films were controlled for thermoelectric properties. </LI> <LI> Thermoelectric properties were discussed based on temperature of substrate heating. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
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P. Nuchuay,T. Chaikeeree,M. Horprathum,N. Mungkung,N. Kasayapanand,C. Oros,S. Limwichean,N. Nuntawong,C. Chananonnawathorn,V. Patthanasettakul,P. Muthitamongkol,B. Samransuksamer,S. Denchitcharoen,A. 한국물리학회 2017 Current Applied Physics Vol.17 No.2
Growths of the indium tin oxide (ITO) nanorod films have been demonstrated by ion-assisted electronbeam evaporation with the glancing-angle deposition technique based on variation in deposition rate. Investigations have been performed on nanostructured ITO films deposited on ITO-coated commercial substrates in comparison to bare substrates. The physical microstructures have been investigated by grazing-incident X-ray diffraction (GIXRD), field-emission scanning electron microscopy (FE-SEM), and high-resolution transmission electron microscopy (HR-TEM). The electrical, optical, and hydrophobic properties were characterized by four-point probe measurements, UVeViseNIR spectrophotometry with angle-dependent technique, and contact angle goniometry, respectively. The results indicated that physical morphologies and nanorod diameters of ITO nanorod films were heavily influenced, and thus could be controlled, by deposition rate. The primary reason was self-annealing effect which occurred during film deposition and was crucial factor towards surface diffusion and film crystallinity. From the optical examinations, ITO nanorods deposited on the ITO-coated glasses exhibited significant improvements on transparent conductive oxide (TCO) properties from reference samples. The proposed ITO materials could therefore function as omnidirectional anti-reflection materials and super hydrophobic surface. This work have also proved that the ITO nanorods prepared by the electron-beam evaporation with the GLAD technique was highly promising for solar cell and optoelectronic applications.
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