AlN Epitaxial Film Growth Using MOCVD For a GHz-band FBAR

Chung-Mo Yang,Seong-Kweon Kim 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.3

We present the fabrication of a film-bulk-acoustic resonator (FBAR) with a highly c-axis- oriented AlN film on Mo/SiO2/Si (100) by using metal-organic chemical-vapor deposition (MOCVD). The resonant frequency and the anti-resonant frequency of the fabricated resonator were 3.219 GHz and 3.249 GHz, respectively. The quality factor and the effective electromechanical coupling coefficient (k2 eff ) were 24.7 and 2.65%, respectively. The conditions of AlN deposition were a substrate temperature of 950℃, a pressure of 20 Torr, and a V-III ratio of 25000. We successfully grew highly c-axis-oriented AlN film with 4 × 10−5 Ωcm resistivity for the Mo bottom electrode. The full widths at half maximum (FWHM) for the AlN (0002) deposited on Mo/SiO2/Si (100) and Mo/SiO2/Si (111) were 4˚ and 3.8˚, respectively. The FWHM value of the deposited AlN film meets the RF band-pass-filter specification for a GHz-band wireless local area network. We present the fabrication of a film-bulk-acoustic resonator (FBAR) with a highly c-axis- oriented AlN film on Mo/SiO2/Si (100) by using metal-organic chemical-vapor deposition (MOCVD). The resonant frequency and the anti-resonant frequency of the fabricated resonator were 3.219 GHz and 3.249 GHz, respectively. The quality factor and the effective electromechanical coupling coefficient (k2 eff ) were 24.7 and 2.65%, respectively. The conditions of AlN deposition were a substrate temperature of 950℃, a pressure of 20 Torr, and a V-III ratio of 25000. We successfully grew highly c-axis-oriented AlN film with 4 × 10−5 Ωcm resistivity for the Mo bottom electrode. The full widths at half maximum (FWHM) for the AlN (0002) deposited on Mo/SiO2/Si (100) and Mo/SiO2/Si (111) were 4˚ and 3.8˚, respectively. The FWHM value of the deposited AlN film meets the RF band-pass-filter specification for a GHz-band wireless local area network.

Mo/SiO₂/Si(100)기판 위에 MOCVD법으로 성장시킨 AIN박막이용 GHz대역의 FBAR제작에 관한 연구

양충모,김성권,차재상,박구만,Yang, Chung-Mo,Kim, Seong-Kweon,Cha, Jae-Sang,Park, Ku-Man 한국조명전기설비학회 2006 조명·전기설비학회논문지 Vol.20 No.4

본 논문에서는 $Mo/SiO_2/Si(100)$ 기판 위에 MOCVD(Metal-Organic-Chemical-Vapor Deposition)법을 이용하여 C축 방향으로 성장시킨 AIN(Aluminum Nitride) 박막을 이용하여 GHz대역 무선 통신에서 사용할 수 있는 FBAR(Film-Bulk-Acoustic Resonator)을 제작하였다. 제작된 공진부의 공진주파수와 반공진주파수는 각각 3.189[GHz]와 3.224[GHz]으로 측정되었으며, Q값(Quality Factor)과 유효한 전기기계 결합계수(${k_{eff}}^2$)는 각각 24.7과 2.65[%]로 평가되었다. AIN의 증착(Deposition) 조건은 $950[^{\circ}C]$의 기판표면(Substrate) 온도, 20Torr의 압력, 25000의 N/Al의 V/III비로 증착하였다. $4{\times}10^{-5}[\Omega{cm}]$의 Mo 하부전극 고유저항과 $Mo/SiO_2/Si(100)$ 기판 위에 AIN(0002) FWHM(Full-Width at Half-Maximum) 4를 갖는 C축 방향성의 AIN 박막을 성공적으로 성장시켰다. 따라서 증착된 AIN박막의 FWHM값은 GHz대역 무선 통신용 RF(Radio Frequency) 밴드 패스 필터 설계에 유용하게 사용될 것이다. In this paper, it is reported that film-bulk-acoustic resonator with high c-axis oriented AIN film on $Mo/SiO_2/Si(100)$ using metal-organic-chemical-vapor deposition was fabricated. The resonant frequency and anti-resonant frequency of the fabricated resonator were observed with 3.189[GHz] and 3.224[GHz], respectively. The quality factor and the effective electromechanical coupling coefficient(${k_{eff}}^2$) were measured with 24.7 and 2.65[%], respectively. The conditions of AIN deposition were substrate temperature of $950[^{\circ}C]$, pressure of 20Torr, and V-III ratio of 25000. A high c-axis oriented AIN film with $4{\times}10^{-5}[\Omega{cm}]$ resistivity of Mo bottom electrode and $4[^{\circ}]$ of AIN(0002) full-width at half-maximum(FWHM) on $Mo/SiO_2/Si(100)$ was grown successfully. The FWHM value of deposited AIN film is useful for the RF band pass filter specification for GHz-band wireless local area network.

18 Ni 마르에이징 강의 기계적 성질에 미치는 Mo 첨가량의 영향

김학모,김인배,박세윤 ( Hak Mo Kim,In Bae Kim,Se Yoon Park ) 한국열처리공학회 1991 熱處理工學會誌 Vol.4 No.3

Effects of Mo content and aging conditions on the amount of retained austenite and mechanical properties of 18 Ni maraging steels were investigated. Maraging steels were fabricated with variation of Mo content, 3, 5, 7, 9% and heat treated by austenitizing at 840℃ for 1 hour and then aged at 480℃ for 0.5∼100 hours. It was found that the amount of retained austenite after aolution treatment was negligible up to 5% Mo. 8 and 11 volume percents of retained austenite were obtained with 7 and 9% Mo respectively. The maximum hardness and yield strength without great loss of impact toughness were attained in the range of 4∼8 hours of aging time at 480℃ with 5% Mo. It was concluded, as a result, that the optimum Mo content for the good combination of strength and toughness is to be 5% Mo.

SHS 공정에 의해 제조된 Mo_xW_1-xSi₂ 발열체의 열화메커니즘

이동원,이상헌,김용남,이성철,구상모,오종민,Lee, Dong-Won,Lee, Sang-Hun,Kim, Yong-Nam,Lee, Sung-Chul,Koo, Sang-Mo,Oh, Jong-Min 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.10

The degradation mechanism of $Mo_xW_{1-x}Si_2$ ultrahigh-temperature heating elements fabricated by self-propagating high-temperature synthesiswas investigated. The $Mo_xW_{1-x}Si_2$ specimens (with and without post-annealing) were subjected to ADTs (accelerated degradation tests) at temperatures up to $1,700^{\circ}C$ at heating rates of 3, 4, 5, 7, and $14^{\circ}C/min$. The surface loads of all the specimen heaters were increased with the increase in the target temperature. For the $Mo_xW_{1-x}Si_2$ specimens without annealing, many pores and secondary-phase particles were observed in the microstructure; the surface load increased to $23.9W/cm^2$ at $1,700^{\circ}C$, while the bending strength drastically reduced to 242 MPa. In contrast, the $Mo_xW_{1-x}Si_2$ specimens after post-annealing retained $single-Mo_xW_{1-x}Si_2$ phases and showed superior durability after the ADT. Consequently, it is thought that the formation of microcracks and coarse secondary phases during the ADT are the main causes for the degraded performance of the $Mo_xW_{1-x}Si_2$ heating elements without post-annealing.

Effect of post annealing on the microstructure, mechanical properties, and failure of Mo_xW_1-xSi₂ heaters produced by self-propagating high-temperature synthesis

Cho, Myung-Yeon,Lee, Sung-Chul,Park, Chulhwan,Lee, Daeseok,Koo, Sang-Mo,Moon, Kyoung-Sook,Lee, Dong-Won,Oh, Jong-Min Elsevier 2019 INTERMETALLICS Vol.110 No.-

<P><B>Abstract</B></P> <P>High-performance tungsten molybdenum disilicide (Mo<SUB>x</SUB>W<SUB>1-x</SUB>Si<SUB>2</SUB>) heating elements were prepared using a self-propagating high temperature synthesis process. The effect of post annealing on the degradation behavior of the alloy was experimentally investigated. Increasing the attrition milling time up to 20 min during powder preparation resulted in Mo<SUB>x</SUB>W<SUB>1-x</SUB>Si<SUB>2</SUB> heaters with the highest density, which increased the fracture strength compared to samples with shorter attrition times. Such samples were annealed and evaluated as heating elements using accelerated degradation tests and failure analysis in order to compare their structural characteristics and flexural strength with as-fabricated samples. The annealed Mo<SUB>x</SUB>W<SUB>1-x</SUB>Si<SUB>2</SUB> heater showed a relatively dense structure with few pores and no secondary phases, apart from a SiO<SUB>2</SUB> layer. This favorable structure prevented bubble formation, which can result in fracturing of the heater, as revealed by evaluation at high temperatures with various heating rates. The flexural strength of the annealed specimen was 2.5-times higher than that of the as-fabricated specimen, which was attributed to removal of secondary phases during annealing. Failure time and surface load analyses were used to investigate the fracture mechanism of the Mo<SUB>x</SUB>W<SUB>1-x</SUB>Si<SUB>2</SUB> heaters in detail at 1790 °C by quantifying bubble formation and the presence of secondary phases.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Self-propagating high temperature synthesis of Mo<SUB>x</SUB>W<SUB>1-x</SUB>Si<SUB>2</SUB> heaters demonstrated. </LI> <LI> Post-annealed Mo<SUB>x</SUB>W<SUB>1-x</SUB>Si<SUB>2</SUB> heaters were highly dense, with good flexural strength. </LI> <LI> Bubble formation (the main cause of fracture) suppressed at ultra-high temperature (above 1700 °C). </LI> <LI> Surface load, failure time, and bubble formation used to study fracture mechanisms. </LI> </UL> </P>

해남 모이산 천열수 금은광상의 지구화학적 특성

문동혁,고상모,이길재,Moon, Dong-Hyeok,Koh, Sang-Mo,Lee, Gill-Jae 대한자원환경지질학회 2010 자원환경지질 Vol.43 No.5

전남 해남군 모이산 금광상에서 지구화학적 특성에 대한 연구를 수행하기 위하여 모이산 지표 및 갱내, 대산 지표에서 채취한 총 140개 시료에 대한 지구화학분석결과를 상관분석, 요인분석 그리고 군집분석 등 다변수 통계처리 하였다. 상관분석 결과, 금의 함량이 100 ppb 미만인 비광화대와 100 ppb 이상인 광화대에서 동시에 금과 높은 상관관계를 가지는 원소는 Ag, Cu, Bi, Te 등이며, 이는 연구지역에서 수반되는 함금 은 광석광물들(엘렉트럼, 실바나이트, 칼라버라이트 및 스퉤자이트)과 기타광석광물들(황동석, 텔룰로비스무타이트 및 비스무시나이트)의 산출과 일치된 결과로 인지된다. Mo은 비광화대(0.269)에서 보다 광화대(0.615)에서 상대적으로 높은 상관계수를 가지므로 금광화작용에 의해 그 함량이 강하게 지배되고 있는 것으로 해석된다. Mn, Cs, Fe, Se 등은 비광화대에서는 금과 정의 상관관계를 가지지만 광화대에서는 음의 상관관계를 가지므로 금광화작용 시 모암으로부터 용탈되는 원소군으로 해석된다. Sb은 광화대에서 금과 높은 상관성을 보이지만 비광화대에서는 음의 상관관계를 가지므로 금광화작용 시 부화되는 원소로 지시될 수 있다. 요인분석결과, 비광화대에서 금의 함량에 영향을 받는 요인군에 속하는 원소는 Se, Ag, Cs, Te 등이며 이들은 연구지역 내 비광화대에서 금의 존재 여부를 알려줄 수 있는 원소로 해석될 수 있다. 반면 광화대에서는 Mo과 Te 등이 강하게 금광화작용의 여부를 지시해 주며, 금과 함께 수반되는 은광화작용의 여부를 지시해 줄 수 있는 원소는 Sb과 Cu 등으로 해석된다. 군집분석 결과 비광화대에서 Cd-Zn-Pb-S, Bi-Fe-Cu-Mn, Se-Te-Au-Cs-Ag, As-Sb-Ba 등이 유사한 거동을 보이는 원소군으로 나타나는 반면, 광화대에서는 Cd-Zn-Mn-Pb, Fe-S-Se, As-Bi-Cs, Ag-Sb-Cu, Au-Te-Mo 등이 유사한 거동을 보여주는 원소군으로 나타난다. 이상과 같은 지구화학분석 자료의 다변수 통계처리를 이용하여 금광화대와 비광화대의 산출광물의 거동 및 지구화학적 특성 차이의 비교가 가능하므로 추후 이러한 방법이 이와 유사한 유형의 광상탐사에 유용한 방법으로 적용될 수 있을 것으로 기대된다. Geochemical characteristics of the Moisan epithermal gold-silver deposit with total 140 samples in Haenam area, Jeollanamdo were studied by using multivariate statistical analysis (correlation analysis, factor analysis and cluster analysis). The correlation analysis reveals that Ag, Cu, Bi, Te are highly correlated with Au in the both non-mineralized and mineralized zone. It is resulted from the presence of Au-Ag bearing minerals (electrum, sylvanite, calaverite and stuezite) and non Au-Ag containing minerals (chalcopyrite, tellurobismuthite and bismuthinite). Mo shows relatively much higher correlation at the mineralized zone (0.615) than non-mineralized zone (0.269) which implies Mo content is strongly affected by Au-mineralization. While Mn, Cs, Fe, Se correlated with Au at the nonmineralized zone, they have negative correlation at the mineralized zone. Therefore, they seem to be eluviated elements from the host rock during gold mineralization. Sb is enriched during the gold mineralization showing high correlation at the mineralized zone and negative correlation at the non-mineralized zone. According to the factor analysis, Se, Ag, Cs, Te are the indicators of gold mineralization presence due to the strong affection of gold content in the non-mineralized zone. In the mineralized zone, on the other hand, Mo, Te and Sb, Cu are the indicators of gold and silver mineralization, respectively. While the cluster analysis reveals that Cd-Zn-Pb-S, Bi-Fe-Cu-Mn, Se-Te-Au-Cs-Ag, As-Sb-Ba are the similar behavior elements groups in the non-mineralized zone, Cd-Zn-Mn-Pb, Fe-S-Se, As-Bi-Cs, Ag-Sb-Cu, Au-Te-Mo are the similar behavior elements groups in the mineralized zone. Using multivariate statistical analysis as mentioned above makes it possible to compare the behavior of presented minerals and difference of geochemical characteristics between mineralized and non-mineralized zone. Therefore, it will be expected a useful tool on the similar type of mining exploration.

Mo 화학기상증착에 있어서 불순물 농도에 미치는 증착조건의 영향

배상석,서성교,홍은식,김승모,조미정,한혜정,이두성,김세훈,민석홍 국립7개대학공동논문집간행위원회 2001 공업기술연구 Vol.1 No.-

The thermal decomposition process of Mo(CO)_6 on chemical vapor deposition was investigated by analyzing the effects of deposition temperature, pressure, and reaction gas on the phase change of deposited films. Mo_2C was deposited at or below 350℃ due to the incompleteness of thermal decomposition of Mo(CO)_6, but Mo films was successfully deposited at 400℃ or higher temperatures. The variation of deposition pressure did not change the dependence of decomposition process on deposition temperature. The activation energy of surface reaction was 5.8 ㎉/mole.

A combinatorial approach for the synthesis and analysis of Al_<i>x</i>Cr_<i>y</i>Mo_<i>z</i>NbTiZr high-entropy alloys: Oxidation behavior

Waseem, Owais Ahmed,Auyeskhan, Ulanbek,Lee, Hyuck Mo,Ryu, Ho Jin Published for the Materials Research Society by th 2018 Journal of materials research Vol.33 No.19

<▼1><B>Abstract</B><P/></▼1><▼2><P>To overcome the limited feasibility of various refractory high-entropy alloys (HEAs) due to the presence of (i) very dense elements (W and Ta), (ii) costly elements (Hf and Ta), and (iii) oxidation prone elements (V) in them, Al<I>x</I>Cr<I>y</I>Mo<I>z</I>NbTiZr HEAs were prepared via arc-melting. Considering the critical nature of oxidation resistance in high-temperature applications, HEAs were characterized to form a combinatorial library of microstructural and oxidation behavior. Al<I>x</I>Cr<I>y</I>Mo<I>z</I>NbTiZr HEAs revealed multiphase microstructures consisting of intermetallic phases along with BCC matrices. Mass loss and porous microstructures were obtained in Mo-rich HEAs after oxidation at 1000 °C for 1 h. The presence of Al enhanced the oxidation resistance and developed a protective oxide layer on the HEAs. Al30Cr10-NTZ exhibited promising potential for use in high temperature applications, as it showed an oxidation time exponent of ∼0.5 and a dense and continuous oxide layer.</P></▼2>

SHS 공정으로 제조된 Mo<SUB>x</SUB>W<SUB>1-x</SUB>Si₂ 발열체의 가속수명시험과 고장분석

이동원(Dong-Won Lee),이상헌(Sang-Hun Lee),김용남(Yong-Nam Kim),이희수(Heesoo Lee),이성철(Sung-Chul Lee),구상모(Sang-Mo Koo),오종민(Jong-Min Oh) 한국전기전자학회 2017 전기전자학회논문지 Vol.21 No.3

고온자전합성과 후열처리 공정으로 MoxW1-xSi₂ 발열체를 제조하였다. MoxW1-xSi₂ 발열체의 신뢰성을 검증하기 위해 가속수명시험을 수행하였으며, 수명시간을 Minitab 프로그램으로 추정하였다. 또한, 가속수명시험 후의 MoxW1-xSi₂ 발열체의 고장분석을 전기적과 구조적 특성으로부터 수행하였다. 그 결과, MoxW1-xSi₂ 발열체의 지배적인 고장 유형은 발열체 내부의 크랙 형성과 SiO₂ 보호층의 박리임을 확인하였다. MoxW1-xSi₂ heaters were fabricated by self-propagating high-temperature synthesis (SHS) process and post sintering process. To validate the reliability of the MoxW1-xSi₂ heaters, the accelerated life test (ALT) was conducted, and then lifetime to MoxW1-xSi₂ heaters was estimated by using Minitab programs. Also, the failure analysis of MoxW1-xSi₂ heaters after ALT was performed through electrical and structural properties. As the results, it was confirmed that the dominant failure mode of MoxW1-xSi₂ heaters is the crack formation in heaters and the delamination of protective SiO₂ layers.

Site Preference for Fe in Zn-Doped Y-Type Barium Hexaferrite

Chin Mo Kim,Chan Hyuk Rhee,Chul Sung Kim IEEE 2012 IEEE transactions on magnetics Vol.48 No.11

<P>Polycrystalline Ba<SUB>2</SUB>Zn<SUB>x</SUB>Co<SUB>2-x</SUB>Fe<SUB>12</SUB>O<SUB>22</SUB> samples were prepared by solid state reaction method. The crystallographic structure and magnetic properties of the Zn-doped Y-type hexaferrite samples were investigated by X-ray diffraction, magnetization, and Mössbauer spectroscopy measurements. The crystal structure was found to be hexagonal with space group of <I>R</I>-3/<I>m</I>. The lattice constants of the samples increased as Zn contents increase. From the temperature dependence of magnetization, measured from 50 to 700 K, the magnetic transition temperature (<I>T</I><SUB>S</SUB>,<I>T</I><SUB>C</SUB>) of Ba<SUB>2</SUB>Zn<SUB>x</SUB>Co<SUB>2-x</SUB>Fe<SUB>12</SUB>O<SUB>22</SUB> decreased with increasing Zn concentration. Mössbauer spectra of Ba<SUB>2</SUB>Zn<SUB>x</SUB>Co<SUB>2-x</SUB>Fe<SUB>12</SUB>O<SUB>22</SUB>(x=0,1) were obtained at various temperature ranging from 4.2 to 300 K. Based on the observed spectra, the site occupancies in six interstitial sites of Co, Zn and Fe ions were calculated from the average of the relative sub-spectra absorption areas. Increasing Zn contents, the Debye temperature of the samples decreased. The isomer shift values of the samples at various temperatures were 0.1 <; δ <; 0.45mm/s, relative to the Fe metal, which were consistent with the Fe<SUP>3+</SUP> valance state.</P>