Administrative Role of the ‘Gendered Other’ in Medieval India

M. Asif Noor,Israr Ullah Khan 아시아사회과학학회 2022 Jornal of Asia Social Science Vol.6 No.2

The aim of the paper is to investigate the role of eunuchs and transgender i.e. the gendered other in central and provincial administration of Medieval India. In order to achieve the aim, the paper presents (1) a basic architecture of the significance of various administrative posts in Medieval India, (2) the gendered other’s role in the executive, military, police, finance management and judiciary (3) the gendered other’s role in the medicinal provision of the Empire. The paper is based on multiple historical records and article analysis including Ain I Akbari, Tazkiratul Waqiat as well as articles written by Lubna Irfan and Shadab Bano.

Optical characterization of quaternary AlInGaN epilayer and multiple quantum wells grown by a pulsed metalorganic chemical vapor deposition

Ryu, M.Y.,Chen, C.Q.,Kim, J.S.,Asif Khan, M. Elsevier 2011 Current Applied Physics Vol.11 No.2

The optical properties of quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a pulsed metalorganic chemical vapor deposition have been investigated by means of photoluminescence (PL) and time-resolved PL measurements. The PL emission peaks in both AlInGaN epilayers and MQWs show a blueshift with increasing excitation power density. The PL intensities of MQWs are much stronger (∼3-4 times) than that of the epilayer. The PL emission intensities (I<SUB>emi</SUB>) of both AlInGaN epilayers and MQW samples increase superlinearly with increasing excitation power density (I<SUB>exc</SUB>), following a power-law form, I<SUB>emi</SUB> @? I<SUB>exc</SUB><SUP>β</SUP>. The PL decay times of MQWs are longer than that of epilayer. The longer PL decay times may be due to a stronger localization effect of carriers/excitons at band tail states and wave function separation caused by the quantum confined Stark effect. These results indicate that AlInGaN/AlInGaN MQWs grown by a PMOCVD are promising materials for ultraviolet light emitting diode (LED) applications similar to the InGaN/InGaN system for blue LED applications.

Effect of Y2O3 doping on the electrical transport properties of Sr2MnNiFe12O22 Y-type hexaferrite

Muhammad Irfan,M.U. Islam,Irshad Ali,M. Asif Iqbal,Nazia Karamat,Hasan M. Khan 한국물리학회 2014 Current Applied Physics Vol.14 No.1

Y2O3 doped Y-type composite hexa-ferrites Sr2MnNiFe12O22 þ xY2O3 (x ¼ 0 wt%, 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%) were synthesized successfully using sol-gel auto combustion technique. X-ray diffraction analysis reveals Y-type hexagonal structure with few traces of secondary phases. The decrease in grain size as a function of Yttrium content is attributed to the fact that Yttrium acts as a grain inhibitor. The DC resistivity was observed to increase with increasing Yttrium-contents due to the unavailability of Fe3þ ions at octahedral sites. Activation energy showed that the samples with high resistivity have high value of activation energy and vice versa. Permittivity decreases with the increase of frequency following MaxwellWagner Model. In addition, the doped samples exhibit very low dielectric constant and low loss tangent in frequency range 20 Hze1 MHz. The sample x ¼ 5 wt% exhibit the lowest value of dielectric constant. The variation in imaginary part of dielectric constant and loss tangent with frequency show normal dielectric behavior for all the samples. The frequency dependent ac conductivity increases with increase in frequency and decrease with Y2O3 doping. These characteristics may be suitable for their potential applications in electromagnetic attenuation materials and microwave devices. The conductivity mechanism so determined was hopping mechanism. The dc resistivity of the doped ferrites measured in our case is about 1010 U-cm that meets the requirement for fabrication of components by electroplating.

Epidemiology, Etiology, Diagnosis and Treatment of Prostate Cancer

Daniyal, Muhammad,Siddiqui, Zamir Ali,Akram, Muhammad,Asif, H.M.,Sultana, Sabira,Khan, Asmatullah Asian Pacific Journal of Cancer Prevention 2014 Asian Pacific journal of cancer prevention Vol.15 No.22

Prostate cancer is more common in men over the age of 65 years. There are 15% cases with positive family history of prostate cancer Worldwide. Prostate cancer is the second leading cause of death among the U.S. men. Prostate cancer incidence is strongly related to age with the highest rates in older man. Globally millions of people are suffering from this disease. This study aims to provide awareness about prostate cancer as well as an updated knowledge about the epidemiology, etiology, diagnosis and treatment of prostate cancer.

Optical characterization of quaternary AlInGaN epilayer and multiple quantum wells grown by a pulsed metalorganic chemical vapor deposition

류미이,C.Q. Chen,김진수,M. Asif Khan 한국물리학회 2011 Current Applied Physics Vol.11 No.2

The optical properties of quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a pulsed metalorganic chemical vapor deposition have been investigated by means of photoluminescence (PL) and time-resolved PL measurements. The PL emission peaks in both AlInGaN epilayers and MQWs show a blueshift with increasing excitation power density. The PL intensities of MQWs are much stronger (∼3―4 times) than that of the epilayer. The PL emission intensities (I_emi) of both AlInGaN epilayers and MQW samples increase superlinearly with increasing excitation power density (I_exc), following a power-law form, I_emi I_exc^β. The PL decay times of MQWs are longer than that of epilayer. The longer PL decay times may be due to a stronger localization effect of carriers/excitons at band tail states and wave function separation caused by the quantum confined Stark effect. These results indicate that AlInGaN/AlInGaN MQWs grown by a PMOCVD are promising materials for ultraviolet light emitting diode (LED) applications similar to the InGaN/InGaN system for blue LED applications.

RPSMDSM: Residential Power Scheduling and Modelling for Demand Side Management

( Sheeraz Ahmed ),( Ali Raza ),( Shahryar Shafique ),( Mukhtar Ahmad ),( M. Yousaf Ali Khan ),( Asif Nawaz ),( Rohi Tariq ) 한국인터넷정보학회 2020 KSII Transactions on Internet and Information Syst Vol.14 No.6

In third world countries like Pakistan, the production of electricity has been quickly reduced in past years due to rely on the fossil fuel. According to a survey conducted in 2017, the overall electrical energy capacity was 22,797MW, since the electrical grids have gone too old, therefore the efficiency of grids, goes down to nearly 17000MW. Significant addition of fossil fuel, hydro and nuclear is 64.2%, 29% and 5.8% respectively in the total electricity production in Pakistan. In 2018, the demand crossed 20,223MW, compared to peak generation of 15,400 to 15,700MW as by the Ministry of Water and Power. Country faces a deficit of almost 4000MW to 5000MW for the duration of 2019 hot summer term. Focus on one aspect considering Demand Side Management (DSM) cannot oversea the reduction of gap between power demand and customer supply, which eventually leads to the issue of load shedding. Hence, a scheduling scheme is proposed in this paper called RPSMDSM that is based on selection of those appliances that need to be only Turned-On, on priority during peak hours consuming minimum energy. The Home Energy Management (HEM) system is integrated between consumer and utility and bidirectional flow is presented in the scheme. During peak hours of electricity, the RPSMDSM is capable to persuade less power consumption and accomplish productivity in load management. Simulations show that RPSMDSM scheme helps in scheduling the electricity loads from peak price to off-peak price hours. As a result, minimization in electricity cost as well as (Peak-to-Average Ratio) PAR are accomplished with sensible waiting time.

Optical Investigation of Quaternary AlxInyGa1-x-yN Epilayers Grown by Using Pulsed Metalorganic Chemical Vapor Deposition

Mee-Yi Ryu,C. Q. Chen,J. H. Song,M. Asif Khan 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.1I

Photoluminescence (PL) and time-resolved PL measurements have been carried out in the quaternary AlxInyGa1.x.yN epilayers grown by using pulsed metalorganic chemical vapor deposition (PMOCVD). PMOCVD-grown AlInGaN layers show a strong blueshift and linewidth broadening of the emission band with excitation power density, and the PL decay time increases with decreasing emission energy. These results are characteristic of localized carrier/exciton recombination, which is beneficial for strong spontaneous emission for ultraviolet (UV) light-emitting diodes (LEDs). The obtained properties indicate that quaternary AlInGaN is a promising material for UV applications and especially that the PMOCVD process is a useful method for fabricating the active region of a deep UV LED.:10chh9