http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Observation of Perpendicular Magnetization Using CoFe/Pd Multilayers
Jin Seock Ma,Hyun Cheol Koo,Jongwha Eom,Joonyeon Chang,Suk-Hee Han,Chulwoo Kim 대한금속재료학회(구 대한금속학회) 2007 ELECTRONIC MATERIALS LETTERS Vol.3 No.2
Perpendicular magnetization using CoFe/Pd multilayers is presented. The magnetic behaviors of perpendicular and horizontal direction do not follow the conventional demagnetizing factor theory. The interfacial anisotropy is attributed to the perpendicular magnetization. A ferromagnetic layer is coupled with other ferromagnetic layers, so a thicker Pd layer weakens the perpendicular magnetization. The small thickness changes of both the CoFe and Pd generate tremendous variation of perpendicular anisotropy. In addition, sputtering power also affects the magnetic property of multilayers.
셀 생산방식에서 기계 - 부품 그룹을 형성하는 발견적 해법
김진석(Jin-Seock Kim),이종섭(Jong-Sub Lee),강맹규(Maing-Kyu Kang) 한국산업경영시스템학회 2005 한국산업경영시스템학회지 Vol.28 No.1
This paper proposes the heuristic approach for the generalized GT(Group Technology) problem to consider the restrictions which are given the number of cell, maximum number of machines and minimum number of machines. This approach is classified into two stages. In the first stage, we use the similarity coefficient method which is proposed and calculate the similarity values about each pair of all machines and align these values in descending order. If two machines which is selected is possible to link the each other on the edge of machine cell and they don't have zero similarity value, then we assign the machines to the machine cell. In the second stage, it is the course to form part families using proposed grouping efficacy. Finally, machine-part incidence matrix is realigned to block diagonal structure. The results of using the proposed approach are compared to the Modified p-median model.
Spin Hall Effect Induced by a Pd/CoFe Multilayer in a Semiconductor Channel
구현철,Jin-Seock Ma,장준연,김형준,한석희,엄종화,김철우 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.3
The spin Hall effect is observed for an InAs-based two-dimensional electron gas. Due to the spin Hall effect, the motion of the spin-polarized electrons deviates and causes a charge accumulation at the edge of the InAs channel. A spin imbalance between spin up and down is induced by spin injection from the Pd/CoFe multilayer, which is perpendicularly magnetized. This charge accumulation induces a transverse voltage in the absence of an external magnetic field. The observed spin Hall voltage decreases with increasing temperature and shows the same tendency as the spin diffusion length.