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Preparation and Analysis of Schottky Diodes with Au and Sol-gel-processed ZnO Thin Films
김경원,Yong-Won Song,Jaehyeon Leem,Sangsig Kim,Sang Yeol Lee 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.1
We fabricate Schottky diodes with the contact between a sol-gel derived ZnO layer and Au that guarantees the expected Schottky contact due to the high work function. The formed single metal Schottky barrier shows characteristics comparable to the barrier formed by alloys. Au is deposited by thermal evaporation on a ZnO thin film that is optimally formed under sol-gel process conditions of a 1-mol zinc acetate concentration and a 3000-rpm coating speed. Possible defects, which can provide deleterious current paths, are minimized by patterning the deposited Au. The I−V curve verifies the formation of a Schottky contact. Measurements showed that the Schottky barrier height and leakage current at −5 V were 0.6 eV and 1 × 10−12A, respectively.
Processing optimization of Ga-doped ZnO for transparent electrode application using DOE
이상규(Sanggyu Lee),장성필(Seongpil Chang),손창완(Chang-Wan Son),임재현(Jaehyeon Leem),송용원(Yong-Won Song),이상렬(Sang Yeol Lee),한승수(Seung-Soo Han) 대한전기학회 2007 대한전기학회 학술대회 논문집 Vol.2007 No.11
Microstructure and electrical properties of Ga-doped ZnO (GZO) films grown on Al₂O₃ templates by Pulsed Laser Deposition (PLD) are investigated utilizing X-ray diffraction method and Hall measurement, respectively. In order to determine the optimized operating condition of the PLD, statistical design of experiment (DOE) is employed. It provides the systematic and efficient methodology for characterization and modeling of PLD processing with a relatively small number of experiments, The most optimized recipe of the process factors is obtained by response optimizer in Minitab.
손창완(Chang Wan Son),장성필(Seongphil Chang),이상규(Sanggyu Lee),임재현(Jaehyeon Leem),송용원(Yong-Won Song),이상렬(Sang Yeol Lee) 대한전기학회 2007 대한전기학회 학술대회 논문집 Vol.2007 No.11
In order to form a p-type ZnO thin film, ZnO thin film is eposited by pulsed laser deposition(PLD) on GaAs substrate followed by nermal treatment that ensures the diffusion of As atoms from the GaAs ubstrate to the ZnO thin films. Photoluminescence (PL) measurement eveals that the improved quality of ZnO thin films is acquired at the rowth temperature of 400 ℃. It is ZnO film grown at 100 ℃ that shows the change from n-type to p-type by the thermal treatment. Measured arrier concentration in the film is changed from -5.70 × 10¹³ to 9.09 × 10¹?.
ZnO 기반의 투명 박막 트랜지스터 제작을 위한 Active-layer의 최적화에 대한 연구
장성필(Seongpil Chang),이상규(Sanggyu Lee),손창완(Chang Wan Son),임재현(Jaehyeon Leem),송용원(Yong-Won Song),주병권(Byung-Kwon Ju),이상렬(Sang Yeol Lee) 대한전기학회 2007 대한전기학회 학술대회 논문집 Vol.2007 No.11
We have observed electrical properties of ZnO thin films for the fabrication of transparent thin film transistor. ZnO thin films were deposited on Al₂O₃(0001) substrate at various temperatures by pulsed laser deposition(PLD). The third of harmonic(355㎚) Nd:YAG laser was used for pulsed laser deposition. X-ray diffraction(XRD), field emission-scanning electron microscope(FE-SEM), and photoluminescence were used to characterize physical and optical properties of ZnO thin film. The results indicated the ZnO film showed good optical properties as increasing temperatures, with low FWHM of exciton-related peak and XRD(0002) peak.
Controlled Ga-doped ZnO NWs Synthesized by PLD in Furnace
송용원(Yong-Won Song),이상규(Sanggyu Lee),장성필(Seongpil Chang),손창완(Chang Wan Son),임재현(Jaehyeon Leem),이상렬(Sang Yeol Lee) 대한전기학회 2007 대한전기학회 학술대회 논문집 Vol.2007 No.11
We synthesize ZnO nanowires (NWs) doped with 3 wt% Ga on sapphire substrate using a hot-walled pulsed laser deposition (PLD) system named PLD in Furnace. A proprietary target rotating system is employed in the furnace to ensure the homogeneity of the deposition. The kinetic energy of the laser-ablazed ZnO is controlled for the optimization of NW formation. The physical properties of the resultant NWs are presented.