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RISS 인기검색어
- 검색키워드
- 저자 : Jae-In Lee(이재인) (검색결과 262 건)
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고전압 전극 두께와 집진판 간격에 따른 전기집진기의 미세먼지 집진효율 및 오존발생 특성
이재인,우상희,김종범,이승복,배귀남,Lee, Jae-In,Woo, Sang-Hee,Kim, Jong Bum,Lee, Seung-Bok,Bae, Gwi-Nam 한국입자에어로졸학회 2018 Particle and Aerosol Research Vol.14 No.4
To optimize the shape of the electrostatic precipitator for the removal of particulate matter in subway environments, the wind-tunnel experiments were carried out to characterize collection efficiency and ozone emission rate. As a standardized parameter, power consumption divided by the square of flow velocity, was increased, the $PM_{10}$ collection efficiency increased. If the standardized parameter is higher than 1.0 due to high power consumption or low flow velocity, increase in thickness of electrodes from 1 to 2 mm, or increase in distance of collection plates from 5 to 10 cm did not change the $PM_{10}$ collection efficiency much. Increase in thickness of high-voltage electrodes, however, can cause decrease in $PM_{10}$ collection efficiency by 28% for low power consumption and high flow velocity. The ozone emission rate decreased as distance of collection plates became wider, because the ozone emission rate per unit channel was constant, and the number of collection channels decreased as the distance of collection plates increased. When the distance of collection plates was narrow, the ozone emission rate increased with the increase of the thickness of electrodes, but the difference was negligible when the distance of collection plates was wide. It was found that the electrostatic precipitator having a thin high-voltage electrodes and a narrow distance of collection plates is advantageous. However, to increase the thickness of high-voltage electrodes, or to increase the distance of collection plates is needed, it is necessary to increase the applied voltage or reduce the flow rate to compensate reduction of the collection efficiency.
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트렌치 콜렉터를 가지는 새로운 TIGBT 에 관한 연구
이재인,양성민,배영석,성만영,Lee, Jae-In,Yang, Sung-Min,Bae, Young-Seok,Sung, Man-Young 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.3
Various power semiconductor devices have been developed and evolved since 1950s. Among them, IGBT is the most developed power semiconductor device which has high breakdown voltage, high current conduction and suitable switching speed which perform trade-offs between each other. In other words, there are trade-offs between a breakdown voltage and on-state voltage drop, and between on-state voltage drop and turn-off time. In this paper, the new structure is proposed to improve a trade-off between a breakdown voltage and on-state voltage drop. The proposed structure has a trench collector and this trench collector induces an accumulation layer at the bottom of an n-drift region during off-state. And this accumulation layer prevents expansion of depletion layer so that trapezoidal electric field distribution is performed in the n-drift region. As a result of this, breakdown voltage is increased without increasing on-state voltage drop. The electrical characteristics of the proposed IGBT is analyzed and optimized by using representative device simulator, TSUPREM4 and MEDICI. After optimization, the electrical characteristics of the proposed IGBT is compared with NPT IGBT which have the same device thickness. As a result of this, it can be confirmed that the proposed structure increases the breakdown voltage of 800 V than that of the conventional NPT IGBT without increasing the on-state voltage drop.
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이재인,Lee, Jae-In 한국군사과학기술학회 2014 한국군사과학기술학회지 Vol.17 No.5
Zinc-air batteries which has various merits in the aspect of energy density, power density and price relative to lithium based second batteries were extensively investigated recently. To develope and optimize these zinc-air batteries, the method of M&S is so efficient solution to reduce price and time. Therefore, in this paper, after executing mathematical modeling, I optimized the zinc-air battery through the simulation and make bolt-cell and discharge it to compare with simulation result. As a result, predictions are well agreed with experimental results.
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MOCVD를 이용한 비평면구조 기판에서의 GaN 선택적 성장특성연구
이재인,금동화,유지범,Lee, Jae-In,Geum, Dong-Hwa,Yu, Ji-Beom 한국재료학회 1999 한국재료학회지 Vol.9 No.3
The selective area growth of GaN by metal organic chemical vapor deposition has been carried out on GaN/ sapphire substrate using $SiO_2$ mask. We investgated the effect of growth parameters such as flow rate of $NH_3$(500~1300sccm) and the growth temperature($950~1060^{\circ}C$) on the growth selectivity and characteristics of GaN using the Scanning Electron Microscopy(SEM). The selectivity of GaN improved as flow rate of NH, and growth temperature increased. But the grown GaN shapes on the substrate windows was independent of the flow rate of $NH_3$. On the pattern shapes such as circle, stripe, and radiational pattern(rotate the stripe pattern by $30^{\circ}, 45^{\circ}$), we observed the hexagonal pyramid, the lateral over growth on the mask layer, and the difference of the lateral growth rate depending on growth condition.
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