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RISS 인기검색어
- 검색키워드
- 저자 : JEFF. T. H. TSAI (검색결과 2 건)
- 무료
- 기관 내 무료
- 유료
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Fabrication of Resistive Random Access Memory by Atomic Force Microscope Local Anodic Oxidation
Jeff T.H. Tsai,Chia-Yun Hsu,Chia-Hsiang Hsu 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2015 NANO Vol.10 No.2
The fabrication of gallium, zinc and nickel oxide nanodots for application of resistive random access memory (RRAM) was demonstrated using the atomic force microscopy (AFM) local anodic oxidation technique. Thin metal ¯lms were deposited on indium tin oxide conductive glass substrates. In the atmospheric environment, using AFM equipped with an Ag-coated probe can generate metal oxide nanodots locally on the metal films. These nanodots act as an insulator layer in a single unit cell of the RRAM. The voltage-biased method allows devices to reset from a lowresistance state (LRS) to a high-resistance state (HRS) at 0.9 V. These results show the ability of the AFM local anodic oxidation to produce 50 nm NiO nanodots on glass substrates for potentially high-density RRAMs. As we developed the characteristics of the structure, we found that a lateral NiO nanobelt RRAM performs very low power operation from such experimental manufacturing process. Using a current-biased method, the lateral device switches from a HRS to a LRS with a low writing voltage of 0.64 V.
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GALLIUM NITRIDE NANOWIRES ENHANCED HIGH-EFFICIENCY COLD CATHODE FLUORESCENT LAMP
JEFF. T. H. TSAI,ZI-JIE LIAO 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2011 NANO Vol.6 No.5
We demonstrated a cold cathode fluorescent lamp that contains gallium nitride (GaN) nanowires at the electrode surfaces in a gas discharge light source to enhance the power efficiency of this luminance system. GaN in the nanowire structure has a high geometric aspect ratio, which makes it an ideal plasma ignition enhancer. The nanostructure enhancer not only improves a lower ignition voltage but also eliminates the use of mercury in the conventional cold cathode fluorescent lamp system. Due to high temperature of plasma, the GaN nanowires are partially dissociated to release the Ga ions into the lamp. Because the Ga ion has a large capture cross-section of electrons, it helps the lamp electrodes to maintain a high electric resistance. This could enhance the power efficiency and prevent the sputtering effect on the electrode to improve the lifetime of the lamp. This mercury-free approach also makes such cold cathode fluorescent lamp as an environment-friendly device.
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