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Nam, Ilku,Woo, Doo Hyung Institution of Electrical Engineers 2014 Electronics letters Vol.50 No.13
A new pixel circuit and driving method for large-area, high-luminance active matrix organic light-emitting diode (AMOLED) displays were studied to improve the image quality. The AMOLED display was designed with low-temperature poly-silicon thin film transistors (TFTs), which have good stability but poor uniformity. To overcome the uniformity problem, the proposed pixel circuit compensates for variations in the threshold voltage and the mobility of the driving TFT. The proposed pixel circuit can operate in two compensation modes for high-luminance operation; and the black data insertion was introduced to improve the characteristics of moving images. The pixel circuit was designed for an 11.6. WXGA top-emission AMOLED panel, and its non-uniformity was estimated to be <4% with a mobility compensation time of 1 mu s.
Nam, Ilku,Bae, Jong-Dae,Moon, Hyunwon,Park, Byeong-Ha The Institute of Electronics and Information Engin 2015 Journal of semiconductor technology and science Vol.15 No.3
A fully integrated multistandard multiband CMOS mobile TV tuner with small silicon area and low power consumption is proposed for receiving multiple mobile digital TV signals and FM signal. In order to reduce the silicon area of the multistandard multiband receiver, other RF front-end circuits except LNAs are shared and a local oscillator (LO) signal generation architecture with a single VCO for a frequency synthesizer is proposed. To reduce the low frequency noise and the power consumption, a vertical NPN BJT is used in an analog baseband circuits. The RF tuner IC is implemented in a $0.18-{\mu}m$ CMOS technology. The RF tuner IC satisfies all specifications for DVB-H/T, T-DMB, and ISDB-T with a sufficient margin and a successful demonstration has been carried out for DVB-H/T, T-DMB, and ISDB-T with a digital demodulator.
Ilku Nam,Jong-Dae Bae,Hyunwon Moon,Byeong-Ha Park 대한전자공학회 2015 Journal of semiconductor technology and science Vol.15 No.3
A fully integrated multistandard multiband CMOS mobile TV tuner with small silicon area and low power consumption is proposed for receiving multiple mobile digital TV signals and FM signal. In order to reduce the silicon area of the multistandard multiband receiver, other RF front-end circuits except LNAs are shared and a local oscillator (LO) signal generation architecture with a single VCO for a frequency synthesizer is proposed. To reduce the low frequency noise and the power consumption, a vertical NPN BJT is used in an analog baseband circuits. The RF tuner IC is implemented in a 0.18-mm CMOS technology. The RF tuner IC satisfies all specifications for DVB-H/T, T-DMB, and ISDB-T with a sufficient margin and a successful demonstration has been carried out for DVB-H/T, TDMB, and ISDB-T with a digital demodulator.
A Wideband Sub-㎓ Receiver Front-end Supporting High Sensitivity and Selectivity Mode
Ilku Nam,Ockgoo Lee,Donggu Im 대한전자공학회 2021 Journal of semiconductor technology and science Vol.21 No.4
A low noise and highly linear wideband RF front-end circuit for sub-㎓ Internet of Things (IoT) applications is proposed. The proposed frontend is composed of a broadband single-ended LNA, a wideband differential LNA employing thermal noise cancellation technique, and an in-phase and quadrature (I/Q) linearized harmonic rejection mixer (HRM). Depending on the interference environment, the proposed front-end supports two operation modes having high sensitivity and selectivity performance by enabling or disabling the first building block of the single-ended LNA. At high sensitivity mode, the frontend shows a voltage gain (Av) of greater than 38 ㏈, a noise figure (NF) of less than 2.1 ㏈, an input-referred third-order intercept point (IIP3) of greater than -23 ㏈m, and an input-referred second-order intercept point (IIP2) of greater than +15 ㏈m in the sub-㎓ frequency band. Concerning for high selectivity mode, it achieves an Av of greater than 22.5 ㏈, a NF of less than 4.7 ㏈, an IIP3 of greater than – 6.8 ㏈m, and an IIP2 of greater than +50 ㏈m over the same operating frequency range.
Ilku Nam,Chihoon Choi,Ockgoo Lee,Hyunwon Moon 대한전자공학회 2016 Journal of semiconductor technology and science Vol.16 No.5
A fully differential RC calibrator for accurate cut-off frequency of a programmable channel selection filter is proposed. The proposed RC calibrator consists of an RC timer, clock generator, synchronous counter, digital comparator, and control block. To verify the proposed RC calibrator, a six-order Chebyshev programmable low-pass filter with adjustable 3 dB cut-off frequency, which is controlled by the proposed RC calibrator, was implemented in a 0.18-mm CMOS technology. The channel selection filter with the proposed RC calibrator draws 1.8 mA from a 1.8 V supply voltage and the measured 3 dB cut-off frequencies of the channel selection LPF is controlled accurately by the RC calibrator.
Nam, Ilku,Choi, Chihoon,Lee, Ockgoo,Moon, Hyunwon The Institute of Electronics and Information Engin 2016 Journal of semiconductor technology and science Vol.16 No.5
A fully differential RC calibrator for accurate cut-off frequency of a programmable channel selection filter is proposed. The proposed RC calibrator consists of an RC timer, clock generator, synchronous counter, digital comparator, and control block. To verify the proposed RC calibrator, a six-order Chebyshev programmable low-pass filter with adjustable 3 dB cut-off frequency, which is controlled by the proposed RC calibrator, was implemented in a $0.18-{\mu}m$ CMOS technology. The channel selection filter with the proposed RC calibrator draws 1.8 mA from a 1.8 V supply voltage and the measured 3 dB cut-off frequencies of the channel selection LPF is controlled accurately by the RC calibrator.
모바일 TV 튜너용 VHF대역 및 UHF 대역 가변 이득 저잡음 증폭기
남일구(Ilku Nam),이옥구(Ockgoo Lee),권구덕(Kuduck Kwon) 대한전자공학회 2014 전자공학회논문지 Vol.51 No.12
본 논문에서는 다양한 모바일 TV 규격을 지원할 수 있는 모바일 TV 튜너용 VHF 및 UHF 대역 가변 이득 저잡음 증폭기를 제안한다. 제안한 VHF 대역 가변 이득 증폭기는 외부 매칭 소자를 제거하기 위해 저항 피드백을 이용하여 저잡음 증폭기와 저주파수 잡음 특성을 개선하기 위해 PMOS 입력을 사용하는 싱글-차동 증폭기, 이득 범위를 제어하기 위해 저항 피드백부분과 감쇄기로 구성된다. 제안한 UHF 대역 가변 이득 증폭기는 잡음 특성과 외부 간섭 신호 제거 특성을 향상시키기 위해 협대역 저잡음 증폭기와 gm 가변 방식을 이용하여 이득을 제어할 수 있는 싱글-차동 증폭기와 감쇄기로 구성된다. 제안한 VHF 및 UHF 대역 가변 이득 저잡음 증폭기는 0.18 ㎛ CMOS 공정을 사용하여 설계하였고, 전원 전압 1.8 V에서 각각 22 ㎃와 17 ㎃ 의 전류를 소모하면서 약 27 ㏈와 27 ㏈의 전압 이득, 1.6-1.7 ㏈와 1.3-1.7 ㏈의 잡음 지수, 13.5 ㏈m와 16 ㏈m의 OIP3의 성능을 보인다. This paper presents a VHF/UHF-band variable gain low noise amplifier for multi-standard mobile TV tuners. A proposed VHF-band variable gain amplifier is composed of a resistive shunt-feedback low noise amplifier to remove external matching components, a single-to-differential amplifier with input PMOS transcoductors to improve low frequency noise performance, a variable shunt-fee㏈ack resistor and an attenuator to control variable gain range. A proposed UHF-band variable gain amplifier consists of a narrowband low noise amplifier with capacitive tuning to improve noise performance and interference rejection performance, a single-to-differential with gm gain control and an attenuator to adjust gain control range. The proposed VHF-band and UHF-band variable gain amplifier were designed in a 0.18 ㎛ RF CMOS technology and draws 22 ㎃ and 17 ㎃ from a 1.8 V supply voltage, respectively. The designed VHF-band and UHF-band variable gain amplifier show a voltage gain of 27 ㏈ and 27 ㏈, a noise figure of 1.6-1.7 ㏈ and 1.3-1.7 ㏈, OIP3 of 13.5 ㏈m and 16 ㏈m, respectively.
Donggu Im,Ilku Nam,Kwyro Lee IEEE 2010 IEEE microwave and wireless components letters Vol.20 No.10
<P>A CMOS broadband differential low noise amplifier (LNA) employing noise and third order intermodulation (IM3) distortion cancellation has been designed using a 0.13 μm CMOS process for mobile TV tuners. By combining a common gate amplifier with a common source amplifier through a current mirror, a high gain due to the additional current amplification and a low noise figure (NF) due to the thermal noise cancellation can be achieved with low power consumption without degrading the input matching. To improve the linearity with low power consumption, a multiple gated transistor technique for canceling the IM3 distortion is adopted. The proposed LNA has a maximum gain of 14.5 dB, an averaged NF of 3.6 dB, an IIP3 of 3 dBm, an IIP2 of 38 dBm, and an |Sn<SUB>11</SUB>| lower than -9 dB in a frequency range from 72 to 850 MHz. The power consumption is 9.6 mW at a 1.2 V supply voltage and the chip area is 0.08 mm<SUP>2</SUP>.</P>