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Improved Thin-Film Multi-Junction Thermal Converters for Low-Frequency Performance
Young Hwa Lee,Se Il Park,Kook Jin Kim,Kwang Chul Lee,Sung Won Kwon,Young Eon Ihm 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.6
We manufactured thin-film multi-junction thermal converters (MJTC) with an evanohm R alloy heater and chromel-constantan thermocouples. A thermal treatment was applied to the evanohm R heater, and the corresponding change in the physical properties was studied. Moreover, a KOH wet etch and new single-step Bosch DRIE method were used for the backside process. The minimum temperature coefficient of resistance (TCR) of the evanohm R thin-film was about 10.46 ppm/C when annealed at 200 C. Based on the measured TCR value, we modified the thin-film MJTC process to reduce the ac-dc transfer differences. For the fabricated converters, we discuss the voltage sensitivity, the thermal time constant, the thermoelectric effect, and ac-dc transfer differences at low frequencies. The transfer differences measured by using a fast reversed dc (FRDC)-dc method showed a stable value below 1.36 ppm, and the ac-dc transfer differences of the new MJTC, which had a marginal Si thermal mass underneath the heater, showed relatively excellent value of about 7.1 ppm (heater thickness of 500 nm) for 1 V at 40 Hz.
실리콘 미세 가공을 이용한 열전형 미소유량센서 제작 및 특성
이영화 ( Young Hwa Lee ),노성철 ( Sung Cheoul Roh ),나필선 ( Pil Sun Na ),김국진 ( Kook Jin Kim ),이광철 ( Kwang Chul Lee ),최용문 ( Yong Moon Choi ),박세일 ( Se Il Park ),임영언 ( Young Eon Ihm ) 한국센서학회 2005 센서학회지 Vol.14 No.1
N/A A thermoelectric flow sensor for small quantity of gas flow rate was fabricated using silicon wafer semiconductor process and bulk micromachining technology. Evanohm R alloy heater and chromel-constantan thermocouples were used as a generation heat unit and sensing parts, respectively. The heater and thermocouples are thermally isolated on the Si₃N₄/ SiO₂/Si₃N₄ laminated membrane. The characteristics of this sensor were observed in the flow rate range from 0.2 slm to 1.0 slm and the heater power from 0.72 mW to 5.63 mW. The results showed that the sensitivities ((??(ΔV)/??(q)); AV : voltage difference, 4 : flow rate) were increased in accordance with heater power rise and decreasing of flow rate.
Ni-Cr계 합금을 이용한 정밀 박막저항체의 제조 및 특성
이영화,박세일,김국진,임영언,Lee Young Hwa,Park Se Il,Kim Kook Jin,Ihm Young Eon 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.1
Precision thin film resistors using evanohm R alloy were fabricated by do magnetron sputtering method. The physical and electrical properties of the resistors were studied after treatment of thermal annealing. The crystallization of the film was increased as the annealing temperature increase. Diffusion and oxidation of Cr and Al elements were occurred into the film surface. The minimum TCR values of 10.46 ppm/$^{\circ}C$ and 10.65 ppm/$^{\circ}C$ were measured at the annealing temperatures of $200^{\circ}C$ and $300^{\circ}C$, respectively. We are conducting additional studies to improve characteristics of our resistors for practical device application.
Ferromagnetism and p-type Conductivity in Laser-deposited (Zn,Mn)O Thin Films Codoped by Mg and P
Hyojin Kim,Hyoun Soo Kim,Dojin Kim,Young Eon Ihm,Woong Kil Choo,Chanyong Hwang 한국자기학회 2007 Journal of Magnetics Vol.12 No.4
We report on the observation of p-type conductivity and ferromagnetism in diluted magnetic semiconductor (Zn0.97Mg0.01Mn0.02)O:P films grown on SiO₂/Si substrates by pulsed laser deposition. The p-type conduction with hole concentration over 1018 ㎝<SUP>?3</SUP> is obtained by codoping of Mg and P followed by rapid thermal annealing in an O₂atmosphere. Structural and compositional analyses for the p-type (Zn0.97Mg0.01Mn0.02)O:P films annealed at 800 ℃ indicates that highly c-axis oriented homogeneous films were grown without any detectable formation of secondary phases. The films were found to be transparent in the visible range. The magnetic measurements clearly revealed an enhancement of room temperature ferromagnetism by p-type doping.