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Ey Goo Kang 한국전기전자재료학회 2016 Transactions on Electrical and Electronic Material Vol.17 No.4
This paper investigated the trench process, unified field limit ring, and other products for the development of a 500V-level unified trench gate power MOSFET. The optimal base chemistry for the device was found to be SF6. In SEManalysis, the step process of the trench gate and field limit ring showed outstanding process results. After finalizingdevice design, its electrical characteristics were compared and contrasted with those of a planar device. It was shownthat, although both devices maintained a breakdown voltage of 500 V, the Vth and on-state voltage drop characteristicswere better than those of the planar type.
Ey Goo Kang,Man Young Sung,Sung Hee Park 한국정보과학회 1998 Journal of Electrical Engineering and Information Vol.3 No.1
A single-crystalline epitaxial film of GaAs has been grown on Si using a gas assisted-ionized vapour beam epitaxial technique. The native oxide layer on the silicon substrate was removed at 550℃ by use of an accelerated arsenic ion beam, instead of a high-temperature desorption. During the growth the substrate temperature was maintained at 550℃. Transmission electron microscopy and electron diffraction data suggest that the GaAs layer is an epitaxially grown single-crystalline layer. The possibility of growing device quality GaAs on Si is also demonstrated through fabrication of GaAs MODFET on Si substrates.
Optimal Design of Trench Power MOSFET for Mobile Application
Kang, Ey Goo The Korean Institute of Electrical and Electronic 2017 Transactions on Electrical and Electronic Material Vol.18 No.4
This research analyzed the electrical characteristics of an 80 V optimal trench power MOSFET (metal oxide field effect transistor) for mobile applications. The power MOSFET is a fast switching device in fields with low voltage(<100 V) such as mobile application. Moreover, the power MOSFET is a major carrier device that is not minor carrier accumulation when the device is turned off. We performed process and device simulation using TCAD tools such as MEDICI and TSUPREM. The electrical characteristics of the proposed trench gate power MOSFET such as breakdown voltage and on resistance were compared with those of the conventional power MOSFET. Consequently, we obtained breakdown voltage of 100 V and low on resistance of $130m{\Omega}$. The proposed power MOSFET will be used as a switch in batteries of mobile phones and note books.
전기자동차용 이중 게이트 구조를 갖는 전력 IGBT소자의 전기적인 특성 분석
강이구(Ey Goo Kang) 한국전기전자학회 2017 전기전자학회논문지 Vol.21 No.1
본 논문에서는 플래너 게이트 및 트렌치 게이트의 구조를 동시에 가지고 있는 1200V급 이중 게이트 IGBT 소자를 제안함과 동시에 전기적인 특성을 분석하였으며, 분석된 결과를 가지고 플래너 게이트 및 트렌치 게이트 IGBT 소자의 전기적인 특성과 비교 분석하였다. 이중 게이트 IGBT 소자를 설계하는데 있어 문턱전압 및 온 상태 전압강하에 영향을 주는 P-베이스 영역에 있어 P-베이스에 깊이는 트렌치 게이트 소자 영역에 영향을 주며, P-베이스에 너비는 플래너 게이트 소자 영역에 영향을 주는 것을 확인할 수 있었다. 본 연구에서 제시한 이중 게이트 IGBT 소자의 전기적인 특성인 항복전압은 1467.04V, 온 전압 강하는 3.08V, 문턱전압은 4.14V의 특성을 나타내고 있다. IGBT (Insulated Gate Bipolar Transistor) device is a device with excellent current conducting capability, it is widely used as a switching device power supplies, converters, solar inverter, household appliances or the like, designed to handle the large power. This research was proposed 1200 class dual gate IGBT for electrical vehicle. To compare the electrical characteristics, The planar gate IGBT and trench gate IGBT was designd with same design and process parameters. And we carried to compare electrical characteristics about three devices. As a result of analyzing electrical characteristics, The on state voltage drop charateristics of dual gate IGBT was superior to those of planar IGBT and trench IGBT. Therefore, Aspect to Energy Loss, dual gate IGBT was efficiency. The breakdown volgate and threshold voltage of planar, trench and dual gate IGBT were 1460V and 4V.