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RISS 인기검색어
- 검색키워드
- 저자 : Elanchezhiyan, S. S. (검색결과 6 건)
- 무료
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Properties of InAs co-doped ZnO thin films prepared by pulsed laser deposition
Elanchezhiyan, J.,Shin, B. C.,Lee, W. J.,Park, S. H.,Kim, S. C. WILEY-VCH Verlag 2009 Crystal research and technology Vol.44 No.12
<P>InAs co-doped ZnO films were grown on sapphire substrates by pulsed laser deposition. The grown films have been characterized using X-ray diffraction (XRD), Hall effect measurements, Atomic force microscope (AFM) and Field emission scanning electron microscope (FESEM) in order to investigate the structural, electrical, morphological and elemental properties of the films respectively. XRD analysis showed that all the films were highly orientated along the c-axis. It was observed from Hall effect measurements that InAs co-doped ZnO films were of n-type conductivity. In addition, the presence of In and As has been confirmed by Energy dispersive X-ray analysis. AFM images revealed that the surface roughness of the films was decreased upon the co-doping. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)</P>
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펄스 레이저 증착법으로 제작된 Bi2O3-MgO-ZnO-Nb2O5 박막의 제작 및 특성 분석
배기열,이동욱,J. Elanchezhiyan,이원재,배윤미,신병철,윤순길 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.3
Pulsed laser deposition is a very efficient technique for fabricating thin films of complex compounds. In the present work, Bi2O3-MgO-ZnO-Nb2O5 (BMZN) pyrochlore thin films were deposited on platinized Si substrates at various temperatures by using pulsed laser deposition technique. These films have been characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM) to investigate their structural, morphological properties. MIM structure was manufactured to analyze di-electrical properties of BMZN thin films. XRD results reveal the thin films deposited at less than 400℃ show only amorphous phase, the crystallized thin films was observed when the thin films were prepared temperature at above 500℃. From AFM, it was known that the thin film grown at 400℃ is the densest. Dielectric constant increased with increasing temperature up to 400℃ at 100 ㎑ and dramatically decreased at the higher temperature. A aspect of dissipation factor was the exact opposite of dielectric constant. BMZN thin films grown at 400℃ exhibited a high dielectric constant of 60.9, a low dissipation factor of 0.007 at 100 ㎑.
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Defluoridation of Water by Graphene Oxide Supported Needle-Like Complex Adsorbents
Prabhu, S. M.,Elanchezhiyan, S. S.,Lee, G.,Meenakshi, S. Springer Science + Business Media 2016 Journal of inorganic and organometallic polymers a Vol.26 No.4
<P>The dicarboxylic acids like oxalic acid, malonic acid and succinic acid mediated graphene oxide-zirconium needle like complexes were synthesized and used to remove fluoride from simulated fluoride contaminated water. The adsorption of fluoride by dicarboxylic acids mediated graphene oxide-zirconium complexes were by both electrostatic interaction at acidic pH and ion-exchange mechanism at neutral pH. The maximum defluoridation capacity observed was 9.70 mg/g at the minimum contact time of 18 min at room temperature. Various batch equilibrium parameters like pH studies, contact time, common ion interference and temperature studies were optimized. The synthesized graphene oxide and graphene oxide supported complexes were characterized using UV-vis, FTIR, XRD and SEM with EDAX analysis to establish the mechanism of fluoride adsorption. The removal of fluoride was described by the pseudo-second-order reaction kinetics, Freundlich isotherm model and thermodynamic studies which indicates the nature of adsorption was endothermic and spontaneous. Regeneration studies depict that the dicarboxylic acid mediated graphene oxide-zirconium complex can be used as an effective adsorbent for the removal of fluoride ions from wastewater. Also, the field applicability of the material has been verified with field samples collected from nearby fluoride endemic villages.</P>
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펄스 레이저 증착법으로 제작된 Bi<sub>2</sub>O<sub>3</sub>-MgO-ZnO-Nb<sub>2</sub>O<sub>5</sub> 박막의 제작 및 특성 분석
배기열,이동욱,이원재,배윤미,신병철,윤순길,Bae, Ki-Ryeol,Lee, Dong-Wook,Elanchezhiyan, J.,Lee, Won-Jae,Bae, Yun-Mi,Shin, Byoung-Chul,Yoon, Soon-Gil 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.3
Pulsed laser deposition is a very efficient technique for fabricating thin films of complex compounds. In the present work, $Bi_2O_3$-MgO-ZnO-$Nb_2O_5$ (BMZN) pyrochlore thin films were deposited on platinized Si substrates at various temperatures by using pulsed laser deposition technique. These films have been characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM) to investigate their structural, morphological properties. MIM structure was manufactured to analyze di-electrical properties of BMZN thin films. XRD results reveal the thin films deposited at less than $400^{\circ}C$ show only amorphous phase, the crystallized thin films was observed when the thin films were prepared temperature at above $500^{\circ}C$. From AFM, it was known that the thin film grown at $400^{\circ}C$ is the densest. Dielectric constant increased with increasing temperature up to $400^{\circ}C$ at 100 kHz and dramatically decreased at the higher temperature. A aspect of dissipation factor was the exact opposite of dielectric constant. BMZN thin films grown at $400^{\circ}C$ exhibited a high dielectric constant of 60.9, a low dissipation factor of 0.007 at 100 kHz.
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PLD를 이용한 Antimony가 도핑된 p 형 ZnO 박막의 구현
배기열,이동욱,이원재,배윤미,신병철,김일수,Bae, Ki-Ryeol,Lee, Dong-Wook,Elanchezhiyan, J.,Lee, Won-Jae,Bae, Yun-Mi,Shin, Byoung-Chul,Kim, Il-Soo,Shan, F.K. 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.10
Antimony (Sb) doped ZnO thin films (0.1 at.%) were deposited on sapphire (0001) substrates at various temperatures (200 - 600$^{\circ}C$) by using pulsed laser deposition technique. All the thin films have been characterized by X-ray diffractometer, atomic force microscopy and spectrophotometer to investigate their structural, morphological and optical properties, respectively. Hall measurements were also carried out to identify the electrical properties of the thin films. These thin films were constituted in wurtzite structure with the preferential orientation of (002) diffraction plane and had as high as 80% optical transmission in the visible range. The bandgap energy also was determined by spectrophotometer which was around 3.28 eV. Hall measurements results revealed that the Sb dope ZnO thin film (0.1 at.%) grown at $500^{\circ}C$ exhibited p-type conduction with a carrier concentration of $8.633\times10^{16}\;cm^{-3}$, a mobility of $1.41\;cm^2/V{\cdot}s$ and a resistivity of $51.8\;\Omega{\cdot}cm$. We have successfully achieved p-type conduction in antimony doped ZnO thin films with low doping level even though the electrical properties are not favorable. This paper suggests the feasibility of p-type doping with large-size-mismatched dopant by using pulsed laser deposition.
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Characterization of (ZnO)_(1-x)(AlN)_x/ZnO junction for optoelectronic applications
N. Gopalakrishnan,L. Balakrishnan,V. Senthamizh Pavai,J. Elanchezhiyan,T. Balasubramanian 한국물리학회 2011 Current Applied Physics Vol.11 No.3
We report the characterization of ZnO homojunction fabricated with undoped (n-ZnO) and AlN codoped ZnO (p-ZnO) films by RF magnetron sputtering. We directly doped (codoped) AlN into ZnO to obtain p-ZnO instead of conventional codoping method. The Current-Voltage characteristics of the fabricated p-n junction show a typical rectification behavior. The junction parameters such as ideality factor (11.85),barrier height (0.782 eV) and series resistance (33 kΩ) have been determined using Cheung’s method. The barrier height (0.805 eV) determined by Norde’s method is also in good agreement with Cheung’s method.
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