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- 저자 : Dipjyoti (검색결과 2 건)
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Dipjyoti Das,Venkateswarlu Gaddam,Sanghun Jeon 대한전자공학회 2021 Journal of semiconductor technology and science Vol.21 No.1
In this paper, we investigate the ferroelectric properties of Al₂O₃/Hf0.5Zr0.5O₂ (HZO) dielectric/ferroelectric (DE/FE) bilayer stack for different DE layer thickness and annealing temperature. The DE/FE stack showed enhanced remanent polarization (Pr) as compared to the reference HZO capacitor for very thin DE layer due to the charge induced by the leakage current through the DE layer. On the contrary, for higher DE layer thickness, this charge injection is suppressed and the ferroelectricity in the DE/FE stack reduces due to the involvement of the depolarization field. An increase in the coercive field (Ec) of the DE/FE based capacitors was observed with increasing the DE layer thickness. Moreover, the Pr value of both HZO and DE/FE stack increases with increasing the annealing temperature till 800℃ and decrease thereafter. The addition of Al₂O₃ layer increases the thermal stability of the capacitors and despite the HZO capacitors being degraded at annealing temperature beyond 800℃, the DE/FE stack-based capacitors were found to demonstrate descent ferroelectricity.
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Improved optical performance of multi-layer MoS2 phototransistor with see-through metal electrode
전상훈,박성호,Jihyun Hur,Minho Ahn,Dipjyoti Das,Junghak Park 나노기술연구협의회 2019 Nano Convergence Vol.6 No.32
In recent years, MoS2 has emerged as a prime material for photodetector as well as phototransistor applications. Usually, the higher density of state and relatively narrow bandgap of multi-layer MoS2 give it an edge over monolayer MoS2 for phototransistor applications. However, MoS2 demonstrates thickness-dependent energy bandgap properties, with multi-layer MoS2 having indirect bandgap characteristics and therefore possess inferior optical properties. Herein, we investigate the electrical as well as optical properties of single-layer and multi-layer MoS2-based phototransistors and demonstrate improved optical properties of multi-layer MoS2 phototransistor through the use of see-through metal electrode instead of the traditional global bottom gate or patterned local bottom gate structures. The see-through metal electrode utilized in this study shows transmittance of more than 70% under 532 nm visible light, thereby allowing the incident light to reach the entire active area below the source and drain electrodes. The effect of contact electrodes on the MoS2 phototransistors was investigated further by comparing the proposed electrode with conventional opaque electrodes and transparent IZO electrodes. A position-dependent photocurrent measurement was also carried out by locally illuminating the MoS2 channel at different positions in order to gain better insight into the behavior of the photocurrent mechanism of the multi-layer MoS2 phototransistor with the transparent metal. It was observed that more electrons are injected from the source when the beam is placed on the source side due to the reduced barrier height, giving rise to a significant enhancement of the photocurrent.
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