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Said, L. Ben,Boughalmi, R.,Inoubli, A.,Amlouk, M. Korean Society of Microscopy 2017 Applied microscopy Vol.47 No.3
In this work further optical and electrical investigations of pure and Zr doped $Mn_3O_4$ (from 0 up to 20 at.%) thin films as a function of frequency. First, the refractive index, the extinction coefficient and the dielectric constants in terms of Zr content are reached from transmittance and reflectance data. The dispersion of the refractive index is discussed by means of Cauchy model and Wemple and DiDomenico single oscillator models. By exploiting these results, it was possible to estimate the plasma pulse ${\omega}_p$, the relaxation time ${\tau}$ and the dielectric constant ${\varepsilon}_{\infty}$. Second, we have performed original ac and dc conductivity studies inspired from Jonscher model and Arrhenius law. These studies helped establishing significant correlation between temperature, activation energy and Zr content. From the spectroscopy impedance analysis, we investigated the frequency relaxation phenomenon and hopping mechanisms of such thin films. Moreover, a special emphasis has been putted on the effect of the oxidation in air of hausmannite thin films to form $Mn_2O_3$ ones at $350^{\circ}C$. This intrigue phenomenon which occurred at such temperature is discussed along with this electrical study. Finally, all results have been discussed in terms of the thermal activation energies which were determined with two methods for both undoped and Zr doped $Mn_3O_4$ thin films in two temperature ranges.
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Refka Mimouni,Adel Souissi,Ali Madouri,Karem Boubaker,Mosbah Amlouk 한국물리학회 2017 Current Applied Physics Vol.17 No.8
In this work, we aimed an effective low-cost system for water purification from Methylene Blue using the photocatalytic performance of (Cr,In) codoped ZnO sprayed thin films under sunlight irradiation. XRD analysis demonstrate that the samples crystallized in würtzite ZnO phase, with a privileged orientation of crystallites towards (002) direction parallel to c-axis. The obtained images of AFM and SEM micrographs showed the enhancement of the roughness of ZnO films by codoping. In addition, the optical investigations indicated that the band gap values of (Cr,In) codoped ZnO thin films decreases from 3.3 eV to 3.1 eV in terms of (Cr, In) contents, whence, more solar energy can be exploited for photocatalytic reactions. Likewise, from PL study, the decrease of UV intensity peak by codoping points out the recombination inhibition in ZnO thin films. Also, the presence of defects demonstrated by visible emission has an important role in photocatalysis because on the surface of defects, surface redox reactions are taking place. So, they act as active sites of (Cr,In) codoped ZnO photocatalyst. Moreover, the effect of hydroxide OH radicals and the superoxide anion radicals (O2-) in photocatalytic mechanism for Methylene Blue degradation was discussed. Furthermore, (Cr,In) codoped ZnO thin films showed an excellent photodegradation efficiency under sunlight irradiation and present high recycling performance even after three re-use cycles.
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S. Lazzez,K.B. Ben Mahmoud,S. Abroug,F. Saadallah,M. Amlouk 한국물리학회 2009 Current Applied Physics Vol.9 No.5
Measurements of In2S3 and ZnIn2S4 sprayed thin films thermal characteristics have been carried out using the photodetection technique. The thermal conductivity k and diffusivity D were obtained using a new protocol based on photothermal signal parameters analysis. Measured values of k and D were respectively, (15.2 ± 0.85) Wm-1K-1 and (69.8 ± 7.1) × 10-6 ㎡s-1 for In2S3, (7.2 ± 0.7) Wm-1K-1 and (32.7 ± 4.3) × 10-6 ㎡s-1 for ZnIn2S4. These values are extremely important since similar compounds are more and more proposed as Cd-free alternative materials for solar cells buffer layers. Measurements of In2S3 and ZnIn2S4 sprayed thin films thermal characteristics have been carried out using the photodetection technique. The thermal conductivity k and diffusivity D were obtained using a new protocol based on photothermal signal parameters analysis. Measured values of k and D were respectively, (15.2 ± 0.85) Wm-1K-1 and (69.8 ± 7.1) × 10-6 ㎡s-1 for In2S3, (7.2 ± 0.7) Wm-1K-1 and (32.7 ± 4.3) × 10-6 ㎡s-1 for ZnIn2S4. These values are extremely important since similar compounds are more and more proposed as Cd-free alternative materials for solar cells buffer layers.
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M. Haj Lakhdar,B. Ouni,R. Boughalmi,T. Larbi,A. Boukhachem,A. Colantoni,K. Boubaker,M. Amlouk 한국물리학회 2014 Current Applied Physics Vol.14 No.8
Antimonite (Sb2S3) thin films have been synthesized through an annealing process in sulfur vapors at 300 C of Sb thermal evaporated films. Deposited films have been characterized by X-ray diffraction, scanning electron microscopy and UVeviseNIR spectroscopy. X-ray diagrams of these films have confirms that they were well crystallized in orthorhombic structure and some parameters such as the lattice parameter, crystallite size, microstrain and degree of preferred orientation have been reported and correlated with the effect of crystallite size. Optical properties of Sb2S3 films have been characterized by solid-state UVevisible absorption spectroscopy, and the band gap Eg was between 1.75 and 2.23 eV. Moreover, additional opto-thermal investigation and analyses within the framework of the Lattice Compatibility Theory provided plausible explanation for thickness-dependent incorporation of sulfur element inside antimony elaborated matrices.
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