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Agbenyeke, Raphael Edem,Jung, Eun Ae,Park, Bo Keun,Chung, Taek-Mo,Kim, Chang Gyoun,Han, Jeong Hwan Elsevier 2017 APPLIED SURFACE SCIENCE - Vol.419 No.-
<P><B>Abstract</B></P> <P>Indium oxide (In<SUB>2</SUB>O<SUB>3</SUB>) thin films were deposited by atomic layer deposition using dimethyl(<I>N</I>-ethoxy-2,2-dimethylcarboxylicpropanamide)indium (Me<SUB>2</SUB>In(EDPA)) and H<SUB>2</SUB>O as the In-precursor and reactant, respectively. The In<SUB>2</SUB>O<SUB>3</SUB> films exhibited a saturated growth rate of 0.083nm/cycle at a deposition temperature of 300°C. Porous and amorphous films were grown at 150°C, whereas dense polycrystalline films were deposited at higher deposition temperatures of 200–300°C. XPS analysis revealed negligible carbon and nitrogen impurities incorporation within the films. The estimated bandgap of the In<SUB>2</SUB>O<SUB>3</SUB> films by spectroscopic ellipsometry and UV–vis spectroscopy was about 3.7eV and the increase in refractive index with deposition temperature from 150 to 300°C indicated that dense films were grown at higher temperatures. The high transmittance (>94% in visible light) and good electrical properties (resistivity ∼1.2–7mΩcm, Hall mobility ∼28–66cm<SUP>2</SUP>/Vs) of the In<SUB>2</SUB>O<SUB>3</SUB> films make them a viable option for optoelectronic applications.</P> <P><B>Highlights</B></P> <P> <UL> <LI> In<SUB>2</SUB>O<SUB>3</SUB> films were grown using dimethyl(<I>N</I>-ethoxy-2,2-dimethylcarboxylicpropanamide)indium and H<SUB>2</SUB>O at 150–300°C. </LI> <LI> Polycrystalline In<SUB>2</SUB>O<SUB>3</SUB> films with negligible impurities were deposited at 200–300°C, while amorphous and highly oxygen deficient In<SUB>2</SUB>O<SUB>3</SUB> films were deposited at 150°C. </LI> <LI> In<SUB>2</SUB>O<SUB>3</SUB> films deposited at 200–300°C exhibited the transmittance over 94%, resistivity of 1.2–7mΩcm, and Hall mobility of 28–66cm<SUP>2</SUP>/Vs. </LI> </UL> </P>
Agbenyeke, Raphael Edem,Park, Bo Keun,Chung, Taek-Mo,Kim, Chang Gyoun,Han, Jeong Hwan Elsevier 2018 APPLIED SURFACE SCIENCE - Vol.456 No.-
<P><B>Abstract</B></P> <P>In this study, atomic layer deposition (ALD) of Cu<SUB>2</SUB>S was explored using bis(dimethylamino-2-methyl-2-butoxy)copper(II) and 5% H<SUB>2</SUB>S combination as Cu and S sources, respectively. The reaction resulted in a high growth rate of ∼0.22–0.24 nm/cycle at 150–200 °C owing to the high reactivity of the Cu precursor. At all investigated temperatures, Cu<SUB>2</SUB>S films with Cu oxidation state of +1 were obtained with negligible impurity levels. It was revealed that stoichiometric Cu<SUB>2</SUB>S films could be deposited at 120–150 °C, while sulfur deficient films was formed at 200 °C. Cu<SUB>2</SUB>S ALD process at low temperatures of 100–120 °C resulted in continuous film formation while the higher deposition temperatures of >150 °C led to island formation. Cu<SUB>2</SUB>S films showed p-type electrical characteristic with high hole concentrations of 4 × 10<SUP>19</SUP>–10<SUP>21</SUP> cm<SUP>−3</SUP> and Hall mobility of 2 cm<SUP>2</SUP>/vs. Lastly, the as-deposited Cu<SUB>2</SUB>S films exhibited an optical band gap of 1.2 eV which widened upon prolonged surface oxidation and in addition displayed NIR intra-band absorption.</P> <P><B>Highlights</B></P> <P> <UL> <LI> High growth rate and impurity free Cu<SUB>2−x</SUB>S ALD process was developed using a new precursor combination of bis(dimethylamino-2-methyl-2-butoxy)Cu(II) and H<SUB>2</SUB>S at 120–200 °C. </LI> <LI> Stoichiometric Cu<SUB>2</SUB>S films were deposited at 120–150 °C, while sulfur deficient Cu<SUB>2−x</SUB>S film was formed at 200 °C. </LI> <LI> Cu<SUB>2</SUB>S films showed p-type characteristics with high carrier concentrations and mobility of 4 × 10<SUP>19</SUP>–10<SUP>21</SUP> cm<SUP>−3</SUP> and 2 cm<SUP>2</SUP>/Vs, respectively. </LI> <LI> As deposited Cu<SUB>2</SUB>S films showed an optical band gap of 1.2 eV which widened after prolonged air exposure and in addition exhibited increased near infrared intra-band absorption. </LI> </UL> </P>
Kim, Hyo Yeon,Jung, Eun Ae,Mun, Geumbi,Agbenyeke, Raphael E.,Park, Bo Keun,Park, Jin-Seong,Son, Seung Uk,Jeon, Dong Ju,Park, Sang-Hee Ko,Chung, Taek-Mo,Han, Jeong Hwan American Chemical Society 2016 ACS APPLIED MATERIALS & INTERFACES Vol.8 No.40
<P>Low-temperature growth of In2O3 films was demonstrated at 70-250 degrees C by plasma-enhanced atomic layer deposition (PEALD) using a newly synthesized liquid indium precursor, dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium (Me2In(EDPA)), and O-2 plasma for application to high-mobility thin film transistors. Self-limiting In2O3 PEALD growth was observed with a saturated growth rate of approximately 0.053 nm/cycle in an ALD temperature window of 90-180 degrees C. As-deposited In2O3 films showed negligible residual impurity, film densities as high as 6.64-7.16 g/cm(3), smooth surface morphology with a root-mean-square (RMS) roughness of approximately 0.2 nm, and semiconducting level carrier concentrations of 10(17)-10(18) cm(-3). Ultrathin In2O3 channel-based thin film transistors (TFTs) were fabricated in a coplanar bottom gate structure, and their electrical performances were evaluated. Because of the excellent quality of In2O3 films, superior electronic switching performances were achieved with high field effect mobilities of 28-30 and 16-19 cm(2)/V.s in the linear and saturation regimes, respectively. Furthermore, the fabricated TFTs showed, excellent gate control characteristics in terms of subthreshold swing, hysteresis, and on/off current ratio. The low-temperature PEALD process for high-quality In2O3 films using the developed novel In precursor can be widely used in a variety of applications such as microelectronics, displays, energy devices, and sensors, especially at temperatures compatible with organic substrates.</P>