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김윤기(Yunki Kim),조성래(Sunglae Cho),J. B. Ketterson 한국자기학회 2009 韓國磁氣學會誌 Vol.19 No.4
MnGeP₂ thin films grown on GaAs exhibit room-temperature ferromagnetism with TC~320 K, based on both magnetization and resistance measurements. The coercive fields at 5, 250, and 300 K are 3870, 1380 and 155 Oe, respectively. The anomalous Hall effect was observed, indicating spin polarization of the carriers. Hysteresis has been observed in both magnetoresistance and Hall measurements. The current-voltage characteristics of a MnGeP₂ film grown on an n-type GaAs substrate display semiconducting behavior.
Si<SUB>1-x</SUB>Mn<SUB>x</SUB>Te<SUB>1.5</SUB> 단결정의 구조적, 광학적, 자기적 특성에 관한 연구
황영훈(Younghun Hwang),엄영호(Youngho Um),조성래(Sunglae Cho) 한국자기학회 2006 韓國磁氣學會誌 Vol.16 No.3
We have investigated the Mn concentration-dependent structural, optical, magnetic properties in IV-VI diluted magnetic semiconductor Si<SUB>1-x</SUB>Mn<SUB>x</SUB>Te<SUB>1.5</SUB> crystals prepared by the vertical Bridgman technique. X-ray studies showed the single crystalline hexagonal crystal structure. From the optical absorption measurements energy band gap were found to decreases with increasing x and temperature. From the magnetization measurements the samples had ferromagnetic ordering with Curie temperature T<SUB>C</SUB> about 80 K. With increasing Mn concentration, the average magnetic moments per Mn atom determined from the saturated magnetization increased.
묽은 자성 반도체 Cd<SUB>1 - x</SUB>Mn<SUB>x</SUB>Te의 자기 광학적 특성과 응용성 연구
황영훈(Younghun Hwang),엄영호(Youngho Um),조성래(Sunglae Cho) 한국자기학회 2009 韓國磁氣學會誌 Vol.19 No.5
We investigated the magneto-optical properties and application of diluted magnetic semiconductors Cd<SUB>1 ? x</SUB>Mn<SUB>x</SUB>Te crystals with various Mn contents grown using a vertical Bridgman method. This material crystallizes in the zinc-blende structure for values of x < 0.82. The band-gap energy was depended on Mn mole fraction x linearly and increased with decreasing temperature. The Faraday rotation was increased as the photon energy increased near to that of the fundamental band gap and its increased with increasing Mn mole fraction. Optical isolator using the Cd<SUB>0.62</SUB>Mn<SUB>0.38</SUB>Te crystal shows that the isolation and insertion loss are 45 ㏈ and 0.35 ㏈ at 650 ㎚, respectively.
Magnetoresistance in Post annealed Bi Thin Films on PbTe buffered CdTe(111)B and on Mica Substrates
Yunki Kim(김윤기),Jin Sung Choi(최진성),Hai Bo Li(이해파),Sunglae Cho(조성래) 한국진공학회(ASCT) 2006 Applied Science and Convergence Technology Vol.15 No.4
비스무스의 녹는점보다 3도 낮은 온도인 268℃ 에서 후열처리를 하여 비스무스 박막에서 자기저항의 큰 증가를 관측하였다. 레드텔러라이드/케드뮴텔러라이드 기판 위에서는 온도 5 K, 자기장 5 T 하에서 190에서 260으로, 마이카 기판위에서는 620에서 120으로 자기저항의 큰 증가를 나타내었다. 이러한 자기저항의 큰 증가는, 열처리에 따른 결정도의 향상에 기인한 것으로 보인다. 하지만 일정 시간 이상의 오랜 시간의 열처리는 자기저항을 감소시키는 것으로 관측되었다. We have observed a large increase in the magnetoresistance (MR) of Bi thin films, which were subjected to a post annealing procedure at 268°C, 3°C below the Bi melting point. We have achieved an increase in the MR by 260 fold and 1200 fold at 5 K and 5 T after post annealing, as compared with 190 and 620 for an as deposited Bi film on PbTe/CdTe(111) and on mica, respectively. The large MR increase by post annealing might be due to the improvement of crystallinity according to the x ray analysis. However, post annealing over a certain amount time showed the reduction in MR values.