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운반기체와 Ligand의 첨가가 MOCVD Cu 증착에 미치는 영향에 관한 연구
최정환(J. H. Choi),변인재(I. J. Byun),양희정(H. J. Yang),이원희(W. H. Lee),이재갑(J. G. Lee) 한국진공학회(ASCT) 2000 Applied Science and Convergence Technology Vol.9 No.3
(hfac)Cu(l,5-COD)(1,1,1,5,5,5-hexafluoro-2,4-pentadionato Cu(I) 1,5-cyclooctadine) 증착원을 이용하여 MOCVD(Metal Organic Chemical Vapor Deposition) Cu 박막을 형성하였고, 운반기체가 MOCVD Cu 증착 특성에 미치는 영향에 관하여 조사하였다. 증착된 Cu 박막은 H₂ 운반 기체를 사용한 경우 Ar을 운반기체로 사용한 경우에 비하여 증착률의 증가와 더불어 낮은 비저항을 갖는 박막을 얻을 수 있었다. 또한 표면 거칠기의 개선과 강한 (111) 우선 배향성을 나타내는 박막을 얻을 수 있었으나 접착성의 경우에 있어서는 H₂ 운반 기체를 사용한 경우 감소하는 결과를 나타내었다. 이러한 접착성 감소의 원인은 AES분석에서 확인된 바와 같이 박막내부에 존재하는 F의 영향인 것으로 사료된다. H(hfac) ligand의 첨가 효과에 대하여 조사한 결과에서는 Ar 운반 기체를 사용한 경우 H(hfac) 첨가 시 증착률의 향상이 이루어졌으나 H₂ 운반 기체의 경우 큰 변화를 나타내지 않았고, 비저항의 경우에는 운반 기체와 관계없이 감소하는 결과를 보여 H(hfac) 사용이 증착 특정 개선에 효과적으로 나타났다. 따라서 본 연구에서는 운반기체 변화 및 H(hfac) ligand의 첨가 실험을 통해 MOCVD Cu의 증착기구를 조사하였으며, 이러한 공정조건의 변화가 Cu 박막의 표면거칠기 개선과 동시에 비저항을 낮추는 역할을 하는 것으로 나타났다. The deposition characteristics of MOCVD Cu using the (hfac)Cu(1,5-COD)(1,1,1,5,5,5-hexafluoro-2,4-pentadionato Cu(I) 1,5-cyclooctadine) have been investigated in terms of the effects of carrier gas such as hydrogen and argon as well as the effects of H(hfac) ligand addition. MOCVD Cu using a hydrogen carrier gas led to a higher deposition rate and lower resistivity than an argon carrier gas system. The improvement in the surface roughness of the MOCVD Cu films and the (111) preferred orientation texture was obtained by using a hydrogen carrier gas. However, the adhesion characteristics of the films showed relatively weaker compared to the Ar carrier gas system, probably due to the larger amount of F content in the films, which was confirmed by the AES analyses. When an additional H(hfac) ligand was added, the deposition rate was significantly enhanced in the case of an argon + H(hfac) carrier gas system while significant change in the deposition rate of MOCVD Cu was not observed in the case of the hydrogen carrier gas system. However, the addition of H(hfac) in both carrier gases led to lowering the resistivity of the MOCVD Cu films. In conclusion, this paper suggests the deposition mechanism of MOCVD Cu and is expected to contribute to the enhancement of smooth Cu films with a low resistivity by manipulating the deposition conditions such as the carrier gas and addition of H(hfac) ligand.
TFT-LCDs에 적용 가능한 Cu-Ag 박막에 대한 Mo 기판 위에서의 특성조사
이현민,이재갑,Lee, H.M.,Lee, J.G. 한국재료학회 2006 한국재료학회지 Vol.16 No.4
We have investigated the effect of silver added to Cu films on the microstructure evolution, resistivity, surface morphology, stress relaxation temperature, and adhesion properties of Cu(Ag) alloy thin films deposited on Mo glue layer upon annealing. In addition, pure Cu films deposited on Mo has been annealed and compared. The results show that the silver in Cu(Ag) thin films control the grain growth through the coarsening of its precipitates upon annealing at $300^{\circ}C{\sim}600^{\circ}C$ and the grain growth of Cu reveals the activation energy of 0.22 eV, approximately one third of activation energy for diffusion of Ag dopant along the grain boundaries in Cu matrix (0.75 eV). This indicates that the grain growth can be controlled by Ag diffusion along the grain boundaries. In addition, the grain growth can be a major contributor to the decreased resistivity of Cu(Ag) alloy thin films at the temperature of $300^{\circ}C{\sim}500^{\circ}C$, and decreases the resistivity of Cu(Ag) thin films to $1.96{\mu}{\Omega}-cm$ after annealing at $600^{\circ}C$. Furthermore, the addition of Ag increases the stress relaxation temperature of Cu(Ag) thin films, and thus leading to the enhanced resistance to the void formation, which starts at $300^{\circ}C$ in the pure Cu thin films. Moreover, Cu(Ag) thin films shows the increased adhesion properties, possibly resulting from the Ag segregating to the interface. Consequently, the Cu(Ag) thin films can be used as a metallization of advanced TFT-LCDs.
TDEAT TiN 증착률에 영향을 미치는 인자들에 대한 연구
최정환(J. H. Choi),이재갑(J. G. Lee),박상준(S. J. Park),김재호(J. H. Kim),홍해남(H. N. Hong),윤의중(E. J. Yun),김좌연(J. Y. Kim) 한국진공학회(ASCT) 1998 Applied Science and Convergence Technology Vol.7 No.3
낮은 평형압력을 가진 TDEAT 증착원을 이용하여 TiN 증착을 실시한 실험에서 TiN 증착률에 영향을 주는 인자들에 대하여 연구를 실시하였다. TiN 성장률은 bubbler 온도, 증착온도, 운반기체관의 conductance, 운반기체 종류에 따라 큰 영향을 받고 있었다. 또한 bubbler로 유입되는 운반기체관의 가열에 의하여도 증착률 증가가 적은 범위에서 이루어지고 있음이 관찰되었다. 이와함께 chamber 내로 유입되는 운반관을 90℃로부터 120℃로 가열한 실험에의하면 운반관 가열이 TiN 성장 증가를 일으키고 있으며, 온도에 대한 TiN 성장은 약 0.2 eV의 활성화에너지를 가진 Arrhenius 형태로 증가되고 있었다. We have studied the factors influencing the growth rate of TiN deposited from TDEAT using a bubbler. The growth rate of TiN was primarily dependent on the bubbler temperature, deposition temperature, gas delivery line conductance and carrier gases. In addition, the heating of the gas line through which carrier gas was delivered to the bubbler increased the growth rate slightly. Also heating of the delivery gas line between the bubbler and the chamber caused the increase of the growth rate of TiN, showing the Arrehenius behaviour with the activation energy of 0.2 eV.
UV를 사용한 SAMs 패터닝과 PEDOT의 선택적 증착에 관한 연구
권태욱,이정길,이재갑,Kwon, T.W.,Lee, J.,Lee, J.G. 한국재료학회 2006 한국재료학회지 Vol.16 No.10
Selective vapor deposition of conductive poly(3,4-ethylenedioxythiophene) (PEDOT), thin films has been carried out on self assembled monolayers patterned oxide substrate. Since the 3,4-ethylenedioxythiophene(EDOT) monomer can be polymerized only in the presence of oxidant such as $FeCl_3$, the PEDOT thin film is selectively deposited on patterned $FeCl_3$, which only adsorbs on the partly removed SAMs region due to the inability of $FeCl_3$ to adsorb on SAMs. Therefore, the partly removed SAMs can act as an adsorption layer for the $FeCl_3$ and also as a glue layer for the deposition of PEDOT, resulting in the significantly increased adhesion of PEDOT to $SiO_2$ substrate. The use of UV lithography and Cr patterned quartz mask provided the formation of SAMs patterns on oxide substrates, which allowed for the selective deposition of conductive PEDOT thin films.$^{oo}The$ new process was successfully developed for the selective deposition of PEDOT thin films on SAMs patterned oxide substrate, providing a new way for the patterning of vapor phase deposition of PEDOT thin films with accurate alignment and addressing the inherent adhesion issues between PEDOT and dielectrics.
김현수,이상수,오미희,이재갑,원구태,홍희승,용석중,신계철 대한내과학회 1991 대한내과학회지 Vol.40 No.4
The lung is the most common site of metastasis of extrapulmonary malignant tumor. According to past reports, metastatic cancer of the lung has been found in about 2% of all patients at autopsy. But these days, a diagnosis of endobronchial metastatic cancer utilizing bronchoscopy only is not easy. Thus we need other means of gathering more informaction, such as past history, discovery of other metastatic sites, and pathologic findings with special staining and electronmicroscope, especially in cases of poorly differentiated adenocarcinoma and epidermoid cancer, which are common types of primary lung cancer. We present 5 cases of endobronchial metastatic cancer. We found endobronchial metastatic cancer 2 cases of cervix cancer (epidermoid, adenocarcinoma), 1 case of colon cancer (adenocarcinoma), hypernephroma (renal cell carcinoma), and bladder cancer (transitional cell carcinoma). Since it was impossiole to diagnose the metastatic adenocarcinoma from the cervix only with lightmicroscopic findings, we could use past history and unusual radiologic and bronchoscopic findings which was thought to be the specific endoscopic finding of metastic endobronchial cancer. The interval between the diagnosis of the primary cancer and endobronchial metastatic cancer was 25.7 months. In the future, development of immunohistochemistry, monoclonal antibody, and molecular biologic techniques will give us diagnostic clue for differential diagnosis of metastatic endobronchial cancer from primary bronchogenic lung cancer.