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이우성,정관호,김도훈,김시원,김형준,박종령,송영필,윤희근,이세민,최인혁,윤순길,Lee, Woo-Sung,Jung, Gwan-Ho,Kim, Do-Hun,Kim, Si-Won,Kim, Hyeong-Jun,Park, Jong-Ryong,Song, Young-Pil,Yoon, Hui-Kun,Lee, Sae-Min,Choi, In-Hyuk,Yoon, Soon-Gil 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.9
[ $Pb(Zr_{0.2}Ti_{0.8})O_3/SrRuO_3$ ] heteroepitaxial thin films were deposited at various temperatures on single crystal $SrTiO_3$ substrates by pulsed laser deposition and characterized for the microstructural and ferroelectric properties. The $SrTiO_3$ substartes etched by buffered oxide etch $(pH{\thickapprox}5.8)$ solution for 20s followed by the thermal annealing at $1000^{\circ}C$ for 1h showed the terrace ledges with a 0.4nm height. The $SrRuO_3$ bottom electrodes with a thickness of 52nm grown on $SrTiO_3$ single crystal also exhibit a terrace ledge similar to that of $SrTiO_3$. The PZT thin films were grown with an epitaxial relationship and showed typical P-E hysteresis loops shown at the epitaxial films. The 56nm thick-PZT films deposited at $650^{\circ}C$ exhibit a remanent polarization $(p_r)$ of $80{\mu}C/cm^2$ and a coercive field $(E_c)$ of 160kV/cm.