RFID 도입 프레임워크를 이용한 조선산업 블록트랜스포터 추적관리 시스템 구현

신재천 ( Jae Cheon Shin ),심호섭 ( Ho Seob Shim ),강경식 ( Kyung Sik Kang ),한대희 ( Dae Hee Han ) 한국로지스틱스학회 2010 로지스틱스연구 Vol.18 No.3

조선 산업은 한국 경제에 큰 영향을 주는 중공업 산업이다. 1990년대 이후 한국의 조선 산업은 글로벌 순위에서 경쟁 우위를 점하고 있지만 일본, 서유럽 및 중국 등과 무한 경쟁 시대에 직면해있다. 본 연구는 국내 조선 산업의 경쟁력을 향상시키기 위해 생산 현장에서의 여러 개선 문제들 중에서 블록 및 트랜스포터의 위치 추적을 가능하게 하는 RFID 기술 구현 방법에 대해 제안했다. 이를 위하여 RFID 도입 프레임워크에 따라 블록 트랜스포터 추적관리 프로세스를 연구하고, RFID 기술을 적용하기 위한 관련 하드웨어와 소프트웨어를 선정하였다. 본 연구는 조선 산업에서 RFID 기술을 도입하고자 하는 기업들에게 효과적인 가이드라인을 제시하였다. The shipbuilding industry belong to heavy industry which has a strong influence on Korea`s national economy. Since 1990, Korean shipbuilding industry has a competitive edge in their rankings. But the shipbuilding industry has entered the era of limitless competition with Japan, Western Europe and China etc. This study proposed to implement methods of RFID technology to enable location tracking of block and transporter in the manufacturing fields to raise the competitiveness korean shipbuilding industry in the world market. In order to accomplish this purpose, we studied to-be process (block transporter tracking management process) by introducing RFID framework and also selected the related hardware and software to adopt them. We believe that this paper provided a effective guideline for RFID adoption to the shipbuilding industry.

기판온도 및 열처리온도에 대한 CdS 박막의 전기적 및 광학적 특성

이재만,김정규,박기철,심호섭 慶尙大學校 工科大學 自動化및컴퓨터應用技術硏究所 1996 自動化 및 컴퓨터應用技術 Vol.3 No.1

CdS thin films for window material of solar cell were prepared by the CSVT deposition system reconstructed from a typical vacuum evaporation system. A new type of CdS source was fabricated by screen printing method. The structural, electrical, and optical properties of CdS films and annealed CdS films were investigated as functions of substrate and annealing temperatures. The deposition rate in this system was not changed during the deposition because of precise temperature control by the indirect heating of CdS source. The crystalline structures of CdS thin films were hexagonal structure, and the films were grown perpendicular to the substrate along the (002) plane regardless of the preparation conditions. The resistivity of the CdS films deposited at various substrate temperatures was monotonically increased from 60Ω for 25℃ to 2×10⁴Ω㎝ for 300℃. The variation of the optical transmittance for different substrate temperatures was not observed. The resistivity increased monotonically with increasing annealing temperature. The resistively of the CdS film annealed at 500℃ was 2.34×10^5Ω㎝. The optical transmittance was remarkedly decreased with annealing temperature.

광센서를 위한 ZnO:Al 투명도전막의 제조 및 특성연구

박기철,이형기,심호섭 경북대학교 센서기술연구소 1995 연차보고서 Vol.1995 No.-

RF 마그네트론 스퍼터링법으로 AZO(ZnO:Al)막을 증착시켰다. 타겟내의 Al_2O_3의 첨가량, 기판온도, 분위기압, RF출력 등의 증착조건의 변화에 따라 제조된 AZO막의 조성, Al 도핑양, 구조적 특성 등을 XRD, SEM, EDS 및 RBS로 조사하였다. 이와 함께 전기적 및 광학적 특성을 Hall 효과 및 광투과도 특성을 통하여 조사하였다. 증착된 AZO막은 육방정의 wurtzite 구조였으며 모든 증착조건에서 기판에 수직으로 성장하는 (002)면 방향을 가지는 c-축배향성을 나타내었다. 증착된 AZO막내의 AB 도핑량은 타겟내의 무게비에 비례하였으며 Zn : O의 조성비토 1 : 1로 거의 일정하였다. 투명도전막으로서의 최적조건은 3wt%의 Al_2O_3이 첨가된 타겟으로 기판온도가 150℃, 분위기압이 2mTorr, RF출력이 150W로 증착한 경우였으며 이 때 비저항은 4.7×10 exp (4)Ω㎝, 캐리어 농도는 7.5×10 exp (20)㎝^-3이었다. 또 두께가 1500Å인 막의 경우 550㎚에서 광투고도가 90%이상이었으며 광학적 밴드갭은 3.53eV였다. Aluminium doped zinc oxide(AZO)films were prepared by RF magnetron sputtering method. The chemical compositions, doping concentrations, and the structural char-acteristics of the AzO films were studied in accordance with various deposition parameters, such as Al_2O_3 amount, substrate temperature and working pressure, by XRD, EDS, SEM and RBS. And The electrical and optical properties of AZO films were characterized by Hall effect and optical transmittance measurements. AZO films had were hexagonal wurtzite structure and dominent c-axis orientation. The Al doping concentration in the films were monotonically increased. The atomic ration of Zn : O were 1 : 1. The substrate, working pressure and rf power for optimum condition to fabricate the transparet conductive films using a target containing 3wt% Al_2O_3 were 150 ℃, 2mTorr and 150W, respectively. The resistivity and the carrier density of the AZO film prepared under this condition were 4.7 × 10 exp (-4) Ω㎝ and 7.5 × 10 exp (20) ㎝^-3, respectively. The optical transmittance of 1500 Å thick films at 550㎚ is ∼90% and optical energy band gap was 3.53eV.

일부 도시지역 성인여성들의 헬스클럽 이용에 따른 체격변화에 관한 연구

박순영,심호섭 한국보건통계학회 1986 보건정보통계학회지 Vol.11 No.1

To know the physical changing of the urban female adults by the degree of doing exercises in health club, I observed the changing of each part of the bodies of 198 female adults who do exercises in health club in Seoul by measuring physical constitution at the beginning stage and in 4 weeks, 8 weeks, 16 weeks and 20 weeks exercises. Testing adults were devided into groups of below 29 years old, 30-34 years old, 35-39 years old, and above 40 years old female testing of height, weight chest abdomen, waist, hip, neck, upper arm, thigh, ankle, calf got conclusion below 1. Among 198 people, they classified into groups of 1 month (198 people), 2 months (194 people), 3 months (46 people), 4 months (15 people) and 5 months (11 people) after starting exercises they did. 2. The average height of testing people was 157.04±8.09cm, the average weight of testing people was 61.46±8.05kg, the average chest measurement of testing people was 92.25±6.88cm, and most of them belonged to the style of overweight physique. 3. The measurements of body decreased so much after 8 weeks exercises. 4. The measurements of body increased in groups of 12 years, 16 weeks and 20 weeks exercises, for the omissions of over-weighted people. 5. In age groups, the measurements of body decreased so much in above 40 years old group. 6. The weight decreased 2.41-3.09kg on the average after starting doing exercises. 7. The weight decrease appeared in each part of body in order of abdomen, thigh, hip, chestgirth waist, upper arm, calf, neck and ankle. 8. In the view of changing physical conclusion of female adults who are having exercises in health club, 4 weeks exercises has no effect on it, but, at least, 8 weeks exercises have good effects on it. In this research, because of many omissions, the results of 12 weeks, 16 weeks and 20 weeks have no meaning in statistics. But those who continue to do exercises obtained desired results.

CSVT 법으로 제조된 CdS 박마그이 전기적 및 광학적 특성

박기철,심호섭 한국센서학회 1997 센서학회지 Vol.6 No.5

CdS thin films with low resistivity and adeduate transmittance in the visible region for the window of CdS/CdTe hetero junction solar cell were prepared by close-spaced vapor transport(CSVT) method. The electrical and optical properties of the CdS thin films were investigated in terms of the deposition conditions, such as the substrate temperature, the working pressure, and the source temperature. The substrate temperature, the working pressure, and the source temperature for the optimum deposition of the CdS thin films were 300℃, 100mTorr, and 730℃, respectively. The resistivity and the transmittance of the CdS thin films deposited under this condition were about 7.21 X l0^(-3)Ωcm and over 65%, respectively. The crystallinity, the resistivity, and optical band gap were improved greatly compared to the CdS thin films deposited by general high vacuum evaporation.

기판온도 및 열처리온도에 대한 CdS 박막의 전기적 및 광학적 특성

박기철,김정규,심호섭 한국센서학회 1997 센서학회지 Vol.6 No.2

CdS thin films for window material of solar cell were prepared by close spaced vapor transport deposition system and annealed at different temperatures. The structural, electrical, and optical properties of as-deposited and annealed CdS films were investigated as functions of substrate and annealing temperatures. The CdS thin films were grown perpendicularly to the substrate along the (002)plane with hexagonal structure regardless of the preparation conditions The resistivity of the CdS film deposited was increased gradually from 60Ω·cm for 25℃ to 2X10⁴Ωcm for 300℃. The optical transmittance at the substrate temperature of 25℃ was about 80% in the visible spectrum. The resistivity increased monotonically, and the optical transmittance was decreased substantially with annealing temperature due to the increased defect density in the CdS film.