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아연을 코팅한 테프론 기판 위에 성장된 산화아연 박막의 후열처리 효과
김익현 ( Ik Hyun Kim ),남기웅 ( Gi Woong Nam ),이철언 ( Cheol Eon Lee ),김동완 ( Dong Whan Kim ),최현광 ( Hyon Kwang Choi ),김양수 ( Yang Soo Kim ),김진수 ( Jin Soo Kim ),김종수 ( Jong Su Kim ),손정식 ( Jeong-sik Son ),임재영 ( Ja 대한금속재료학회(구 대한금속학회) 2015 대한금속·재료학회지 Vol.53 No.6
ZnO thin films were first grown on Zn-coated Teflon substrates using a spin-coating method, with various post-heating temperatures. The structural and optical properties of the ZnO thin films were then investigated using field-effect scanning-electron microscopy, X-ray diffractometry, and photoluminescence (PL) spectroscopy. The surface morphology of these ZnO thin films exhibited dendritic structures. With increasing post-heating temperature, all samples preferentially exhibited preferential c-axis orientation and increased residual tensile stress. All of the films exhibited preferential c-axis orientation, and the residual tensile stress of those increased with increasing post-heating temperature. The near-band-edge emission (NBE) peaks were red-shifted after post-heating treatment at 400 ℃. The intensity of the deep-level emission (DLE) peaks gradually decreased with increasing post- heating temperature. Moreover, the narrowest ‘full width at half maximum’ (FWHM) and the highest intensity ratio of the NBE to the DLE for thin films, were observed after post-heating at 400 ℃. The ZnO thin films fabricated with the 400 ℃ post-heating process provided the highest crystallinity and optical properties.(Received March 04, 2014)
분자선에피택시에 의해 성장한 ZnO 나노결정 박막에 완충층 두께와 활성층 성장 온도가 미치는 효과
김병구 ( Byung Gu Kim ),남기웅 ( Gi Woong Nam ),박영빈 ( Young Bin Park ),박형길 ( Hyung Gil Park ),임재영 ( Jae Young Leem ) 대한금속재료학회(구 대한금속학회) 2014 대한금속·재료학회지 Vol.52 No.9
ZnO thin films were deposited on a Si (100) substrate by plasma-assisted molecular beam epitaxy (PA-MBE). Growth of ZnO thin films on a Si substrate is limited due to the large difference between the lattice constants of ZnO and Si. In this research, we studied the effects of the buffer-layer thickness and active-layer growth temperature on the structural and optical properties of ZnO thin films. Scanning electron microscopy, X-ray diffraction, and photoluminescence were carried out to investigate the structural and optical properties of the ZnO thin films. The structural and optical properties of the ZnO thin films were improved when the buffer layers were grown for 20 min and the active layers were grown at 800 ℃.(Received September 9, 2013)
기상이동법으로 성장한 산화아연 나노막대의 포토루미네슨스 분석
김소아람 ( So A Ram Kim ),조민영 ( Min Young Cho ),남기웅 ( Gi Woong Nam ),김민수 ( Min Su Kim ),김도엽 ( Do Yeob Kim ),임광국 ( Kwang Gug Yim ),임재영 ( Jae Young Leem ) 대한금속재료학회(구 대한금속학회) 2011 대한금속·재료학회지 Vol.49 No.10
ZnO nanorods were grown on Au-coated Si substrates by vapor phase transport (VPT) at the growth temperature of 600℃ using a mixture of zinc oxide and graphite powders as source material. Au thin films with the thickness of 5 nm were deposited by ion sputtering. Temperature-dependent photoluminescence (PL) was carried out to investigate the optical properties of the ZnO nanorods. Five peaks at 3.363, 3.327, 3.296, 3.228, and 3.143 eV, corresponding to the free exciton (FX), neutral donor bound exciton (DoX), first order longitudinal optical phonon replica of free exciton (FX-1LO), FX-2LO, and FX-3LO emissions, were obtained at low-temperature (10 K). The intensity of these peaks decreased and their position was red shifted with the increase in the temperature. The FX emission peak energy of the ZnO nanorods exhibited an anomalous behavior (red-blue-red shift) with the increase in temperature. This is also known as an "S-shaped" emission shift. The thermal activation energy for the exciton with increasing temperature in the ZnO nanorods is found to be about 26.6 meV; the values of Varshni`s empirical equation fitting parameters are = 5×10(-4) eV/K, β = 350 K, and E(g)(0) = 3.364 eV.
논문 : Sol-Gel 방법으로 제작된 Cd(x)Zn(1-x)O 박막의 조성비에 따른 구조적 및 광학적 특성
천민종 ( Min Jong Cheon ),김소아람 ( So A Ram Kim ),남기웅 ( Gi Woong Nam ),임광국 ( Kwang Gug Yim ),김민수 ( Min Su Kim ),임재영 ( Jae Young Leem ) 대한금속재료학회(구 대한금속학회) 2011 대한금속·재료학회지 Vol.49 No.7
Cd(x)Zn(1-x)O thin films were grown on quartz substrates by using the sol-gel spin-coating method. The mole fraction, x, of the Cd(x)Zn(1-x)O thin films was controlled from 0 to 1 by changes in the content ratio of the cadmium acetate dehydrate [Cd(CH3COO)2·(2H)2O] and zinc acetate dehydrate [Zn(CH3COO)2·(2H)2O]. The effects of the mole fraction on the morphological, structural, and optical properties of the Cd(x)Zn(1-x)O thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-visible spectroscopy. The Cd(x)Zn(1-x)O thin films exhibited the polygonal surface morphology and their grain size was increased ranging from 42.1 to 63.9 nm with the increase in the mole fraction. It was observed that the absorption bandgap of the Cd(x)Zn(1-x)O thin films decreased from 3.25 to 2.16 eV as the mole fraction increased and the Urbach energy (E(U)) values changed inversely to the optical bandgap of the Cd(x)Zn(1-x)O thin films.
딥코팅 방법으로 성장한 CdxZn1-xO 박막의 Cd 농도 변화에 따른 구조적 및 광학적 특성
지익수 ( Ii Ksoo Ji ),박형길 ( Hyung Gil Park ),김영규 ( Young Gyu Kim ),김소아람 ( Soaram Kim ),남기웅 ( Gi Woong Nam ),김양수 ( Yang Soo Kim ),임재영 ( Jae Young Leem ) 대한금속재료학회(구 대한금속학회) 2014 대한금속·재료학회지 Vol.52 No.4
Ternary CdxZn1-xO thin films are deposited by a sol-gel dip-coating method onto quartz substrates with various amounts of Cd content (x = 0, 0.05, 0.15, and 0.25). The structural and optical properties of the CdxZn1-xO thin films are investigated using x-ray diffraction (XRD), photoluminescence (PL), and (ultravioletvisible) (UV-Vis) spectroscopy. In the XRD patterns, the intensity of the diffraction peaks for ZnO decreases, while the intensity of the diffraction peaks for CdO increases with increases in the Cd content. Above x = 0.15, both diffraction peaks for ZnO and CdO are observed in the XRD pattern, and this indicates that the wurtzite structure for ZnO and the rock-salt structure for CdO coexist in CdZnO thin films. The PL spectra of the films results demonstrate that the near band edge emission peaks in the ultraviolet region shift to lower energy range (red-shift) and the deep level emission peaks at the visible region decreases with increases in the Cd content. The optical properties such as transmittance, optical band gap, and Urbach energy are calculated using the optical data. Using linear fitting of the absorption edge, the band gap energies of the thin films are derived as 3.27, 3.19, 3.12, and 3.03 eV for x = 0, 0.05, 0.15 and 0.25, respectively. In addition, the bowing parameter for the energy band gap of CdxZn1-xO is estimated to be Eg( x) = 3.3 . 1.2 x + x2.