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Freestanding GaN 기판의 Ga-polar 면에 기계적 연마 방법을 적용한 Bow 제어 및 그 특성 연구
김진원,손호기,임태영,이미재,김진호,전대우,황종희,정정영,오해곤,김진훈,최영준,이혜용,윤대호,Gim, Jinwon,Son, Hoki,Lim, Tae-Young,Lee, Mijai,Kim, Jin-Ho,Jeon, Dae-Woo,Hwang, Jonghee,Jung, Jung-Young,Oh, Hae-Kon,Kim, Jin-Hun,Choi, YoungJun,Le 한국전기전자재료학회 2015 전기전자재료학회논문지 Vol.28 No.12
In this paper, we have studied the effect of mechanical polishing to Ga-polar face for reducing the wafer bowing and strain in free-standing GaN. After the mechanical polishing to Ga-polar face, the bowing of the free-standing GaN substrate significantly decreased with increasing the size of diamond slurry, and eventually changed the bowing direction from concave to convex. Furthermore, the full width at half maximum (FWHM) of high-resolution X-ray diffraction (HR-XRD) were decreased, especially the FWHM of (1 0 2) reflection for $1.0{\mu}m$ size of diamond slurry was significantly decreased from 630 to 203 arcsec. In the case, we confirmed that the compressive strain in Ga-polar face was fully released by Raman measurement.
김진원,이호성,Kim, Jinwon,Lee, Hosung 항공우주시스템공학회 2016 항공우주시스템공학회지 Vol.10 No.1
This study shows the statistical properties of the domestic composite material prepregs test result. During the last three years(2012.5~2015.6) the prepreg specimen tests have been performed by referring to NCAMP developed test procedure which was approved by FAA. The database of (1) Carbon Tape, (2) Glass Fabric, and (3) Carbon Fabric composite material prepregs' characteristics have been established for certified aircraft structures. This qualified materials can be used for aircraft structural design through proper material equivalency procedures.
N-polar면의 선택적 에칭 방법을 통한 Free-standing GaN 기판의 Bowing 제어
김진원,손호기,임태영,이미재,김진호,이영진,전대우,황종희,이혜용,윤대호,Gim, Jinwon,Son, Hoki,Lim, Tea-Young,Lee, Mijai,Kim, Jin-Ho,Lee, Young Jin,Jeon, Dae-Woo,Hwang, Jonghee,Lee, Hae-Yong,Yoon, Dae-Ho 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.1
In this paper, we report that selective etching on N-polar face by EC (electro-chemical)-etching effect on the reduction of bowing and strain of FS (free-standing)-GaN substrates. We applied the EC-etching to concave and convex type of FS-GaN substrates. After the EC-etching for FS-GaN, nano porous structure was formed on N-polar face of concave and convex type of FS-GaN. Consequently, the bowing in the convex type of FS-GaN substrate was decreased but the bowing in the concave type of FS-GaN substrate was increased. Furthermore, the FWHM (full width at half maximum) of (1 0 2) reflection for the convex type of FS-GaN was significantly decreased from 601 to 259 arcsec. In the case, we confirmed that the EC-etching method was very effective to reduce the bowing in the convex type of FS-GaN and the compressive stress in N-polar face of convex type of FS-GaN was fully released by Raman measurement.
김진원(Jinwon Kim),류동영(Dongyoung Rew) 항공우주시스템공학회 2019 항공우주시스템공학회 학술대회 발표집 Vol.2019 No.11
최근 중국, 이스라엘, 인도가 달탐사에 뛰어 드는 등 우주 선진국들의 달탐사 노력이 본격적으로 진행되는 있으며 미국도 곧 달착륙을 재개할 예정이다. 항공우주연구원도 달궤도선을 개발하고 있으며, 이어서 달착륙선 개발 사업도 계획하고 있다. 달착륙선에 탑재되는 로버를 성공적으로 월면에 전개시키기 위하여 전개장치의 사전 연구가 필요하게 되었다. 본 연구를 통하여 다양한 전개장치의 방식을 검토/비교하였으며, 향후 로버의 성공적인 전개를 위한 전개장치의 초기 형상을 검토하였다.