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노승현,김경희,조양자,서인수,Ro, Sung-Hyun,Kim, Kyung-Hee,Cho, Yaug-Ja,Suh, Inn-Soo 대한미생물학회 1987 大韓微生物學會誌 Vol.22 No.2
Colonization factor antigen I(CFA I) has been shown to be one of several virulence factors that promote attachment of enterotoxigenic E. coli(ETEC) to small intestinal epithelial cells of humans. The ability of ETEC to produce mannose-resistant hemagglutination(MRHA) of human blood group A has been used to detect CFA I. To determine gastrointestinal carriage in Korean children of E. coli with MRHA and CFA I, 116 strains of E. coli from diarrheal children admitted to Hanyang University Hospital were examined for MRHA of human erythrocytes and the presence of CFA I. Of 45 ETEC strains, 18(40%) gave a positive MRHA($MRHA^+$) and eight(18%) were positive for CFA I(CFA $I^+$). ETEC with CFA I were all heat-stable enterotoxin(ST) producers and two of these strains were of serogroups $O_{25}$. Of 17 classic enteropathogenic E. coli(EPEC), 7(41%) were $MRHA^+$ but all were negative for CFA I(CFA $I^-$). Of 30 enteroadherent E. coli(EAEC) strains, 11(37%) were $MRHA^+$ and one was CFA $I^+$. Of 24 nonpathogenic E. coli, 4(17%) were $MRHA^+$ but all were CFA $I^-$. It was shown that MRHA was common in all strains of E. coli, CFA I was limited only to ST producing ETEC and EAEC; although MRHA is a useful screening procedure, serologic tests seem to be necessary to comfirm CFA I production. CFA I was associated with a lower proportion of ETEC isolates in Korea than has been reported for other locations.
노승현,엄수근,최광호,강명진,김동환,황일환,서광석,이재길,변영철,차호영 한국물리학회 2017 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.71 No.4
We have developed a nitrogen-incorporated silicon oxide (SiOxNy) deposition process using plasma enhanced atomic layer deposition (PEALD) for the gate insulator of recessed-gate Al- GaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors. The SiOxNy film deposited on a recessed GaN surface exhibited a breakdown field of 13.2 MV/cm and a conduction band offset of 3.37 eV, which are the highest values reported for GaN MIS structures to the best of our knowledge. The fabricated normally-off transistor exhibited very promising characteristics such as a threshold voltage of 2.2 V, a maximum drain current density of 428 mA/mm, and a breakdown voltage of 928 V.