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Double-Independent-Gate Ambipolar Silicon-Nanowire Field Effect Transistors
홍성현(Seong Hyeon Hong),유윤섭(Yun Seop Yu) 대한전자공학회 2015 대한전자공학회 학술대회 Vol.2015 No.6
In this paper, a newly proposed Double-Independent-Gate(DIG) Ambipolar Silicon -Nanowire(SiNW) Field Effect Transistor (DIG Ambi-SiNWFET) is introduced. The proposed transistor has two types of gate such as Polarity Gate(Pgate) and Control Gate(Cgate). We demonstrated a correlation between current level and work function of Pgate, Cgate, and Source/Drain(S/D) of the DIG Ambi-SiNWFET. As a result, the current level of DIG Ambi-SiNWFET has small dependence on the work function of Cgate, but it has much dependence on those of Pgate and S/D. When the work functions of Pgate and Cgate and S/D are 4.75eV and 4.5 eV and 4.8eV, respectively, the DIG Ambi-SiNWFET shows clear ambipolar |Ids|-Vds characteristics when Pgate voltage = 1V and Cgate voltage = 1V, and Pgate voltage = -1V and Cgate volatge = -1V.
TiC 분산된 니켈기 합금의 미세조직 및 기계적 특성에 미치는 열처리 영향
홍성현,황금철,이원혁,진억용,Hong, Seong-Hyeon,Hwang, Keum-Chul,Rhee, Won-Hyuk,Chin, Eog-Yong 한국분말야금학회 2002 한국분말재료학회지 (KPMI) Vol.9 No.6
The microstructures and properties of TiC dispersed nickel-base alloy were studied in this work. The alloy prepared by powder metallurgical processing was solution treated, 1st-aged at $880^{\circ}C$ for 16 hours, and then 2nd-aged at $760^{\circ}C$ for 4 hours. Microstucture of sintered specimen showed that TiC particles are uniformly dispersed in Ni base alloy. In the specimen aged at $880^{\circ}C$ for 8 hours, the fine $\gammaNi_3$(Al,Ti) precipitates with round shape are observed and the very fine $\gammaNi_3$(Al,Ti) particles with round shape are precipitated in the specimen aged at $760^{\circ}C$ for 4 hours. The presence of ${\gamma}$precipitates in TiC/Ni base alloy increased the hardness and wear resistance of the specimen. The hardness and wear resistance of the Ni-base with TiC are higher than those of conventional Ni-base superalloy X-750 because of dispersion strengthening of TiC particles. The hardness, transverse rupture strength and resistance of the specimen 2nd-aged at $760^{\circ}C$ for 4 hours are higher than those of 1st-aged specimen due to ultrafine $\gammaNi_3$(Al,Ti) precipitates.
Co 질산염과 TiO(OH)<sub>2</sub> 슬러리를 이용한 초미립 TiC-5%Co 제조 및 WC-Co 분말과의 혼합에 따른 소결체 특성
홍성현,김병기,Hong, Seong-Hyeon,Kim, Byoung-Kee 한국분말야금학회 2008 한국분말재료학회지 (KPMI) Vol.15 No.2
Ultrafine TiC-5%Co powders were synthesized by spray drying of aqueous solution of TiO$(OH)_2$ slurry and cobalt nitrate, followed by calcination and carbothermal reaction. The oxide powders with carbon powder was reduced and carburized at $900^{\circ}C{\sim}1250^{\circ}C$ under hydrogen atmosphere. During reduction, CO gas was mainly evolved by reducing reaction of oxides. Ultrafine TiC-5%Co powders were easily formed by carbothermal reaction at $1250^{\circ}C$ due to using ultrafine powders as raw materials. The ultrafine WC-TiC-Co alloy prepared by sintering of mixed powder of ultrafine WC-13%Co powder and ultrafine TiC-5%Co powder has higher sintered density and mechanical properties than WC-TiC-Co alloy prepared by commercial WC, TiC and Co powders.
홍성현,김병기,Hong, Seong-Hyeon,Kim, Byeong-Gi 한국기계연구원 1999 硏究論文集 Vol.29 No.-
The effect of ball milling conditions in the milling of aluminium foil scraps was studied. Initial foil thickness, ball size. content of oleic acid. weight ratio of mineral spirits/foil. charged amount of foil were varied in wet ball milling process. It is impossible to make flake powders by milling of foil scraps with thickness $120 \mum$. As foil thickness decreases from $60\mum$ to $6.5\mum$, Mean size of powder milled for 30 h decreases from 107 µm to 17 µm. Bigger ball is slightly beneficial for milling of foils to the flake powders due to the larger impact energy produced by them. It is impossible to mill the foil without oleic acid to fabricate the flake powder. As content of oleic acid increases from 1.5 % to 5 %, mean size of flake powder milled for 30 h is drastically decreased. For the mineral spirits content below 50 %, foil scrap was not milled because sliding motion of balls by lubricant effect between balls and wall of container. As weight ratio of mineral spirits and foil increase over 100 %, foils were milled powders with mean powder size 15 - 20 때 irrespective of mineral spirits content due to reduced lubricant effect. As charged amount of foil decreases, mean powder size decreases due to increased collision frequency between ball and foil.
구리 관(管)의 절단(切斷) 공정(工程)중 발생한 구리칩 스크랩의 볼밀링에 의한 구리 분말(粉末) 제조(製造) 가능성(可能性)
홍성현,Hong, Seong-Hyeon 한국자원리싸이클링학회 2011 資源 리싸이클링 Vol.20 No.6
구리관의 절단 공정에서 구리 칩 스크랩이 발생해왔다. 분쇄에 의하여 구리칩 스크랩을 분말화하는 가능성이 연구되었다. 본 연구에서는 로드 밀링, 수평식 볼밀링과 같은 두 가지 타입의 분쇄 방식이 적용되었다. 구리 칩은 로드 밀링에 의하여 분말 형태로 분쇄될 수 없었다. 반면에 36시간 이상 수평식 볼밀링에 의하여 구리칩은 분말로 변화하였다. 수평식 볼밀링에 의한 구리 칩의 분말로 재활용이 가능하였고 48시간 동안 밀링된 원료중 $75{\sim}150{\mu}m$ 범위의 분말은 25.3%이였다. Copper chip scrape has been occurred by cutting of copper pipe. The feasibility of copper chip scrape into the copper powder by milling was studied. Two milling type such as rod milling and horizontal balling milling were applied in this research. Copper chip can not fragmented into powder by using rod milling. In contrast to rod milling, copper chip can be changed into powder by horizontal ball milling for above 36 hours. It was found that recycling of copper chip scraps into copper powder by horizontal ball milling is possible and powder fraction percent ($75{\sim}150{\mu}m$) of milled copper chip for 48 hours is 25.3%.
양극성 이중 독립 게이트 실리콘 나노와이어 전계 효과 트랜지스터 설계
홍성현,유윤섭,Hong, Seong-Hyeon,Yu, YunSeop 한국정보통신학회 2015 한국정보통신학회논문지 Vol.19 No.12
양극성 이중 독립 게이트 실리콘 나노와이어 전계 효과 트랜지스터를 새롭게 제안한다. 제안한 트랜지스터는 극성 게이트와 제어 게이트를 가지고 있다. 극성게이트의 바이어스에 따라서 N형과 P형 트랜지스터의 동작을 결정할 수 있고 제어 게이트의 전압에 따라 트랜지스터의 전류 특성을 제어할 수 있다. 2차원 소자 시뮬레이터를 이용해서 양극성 전류-전압 특성이 동작하도록 두 개의 게이트들과 소스 및 드레인의 일함수를 조사했다. 극성게이트 4.75 eV, 제어게이트 4.5 eV, 소스 및 드레인 4.8 eV일 때 명확한 양극성 특성을 보였다. We propose a new Double-Independent-Gate Ambipolar Silicon-Nanowire Field Effect Transistor(DIG Ambi-SiNWFET). The proposed transistor has two types of gate such as polarity gate and control gate. The polarity gate determines the operation that the gate bias controls NMOSFET or PMOSFET. The voltage of control gate controls the current characteristic of the transistor. We investigated systematically work functions of the two gates and source/drain to operate ambipolar current-voltage characteristics using 2D device simulator. When the work functions of polarity gate, control gate and source/drain are 4.75eV, 4.5eV, and 4.8eV, respectively, it showed the obvious ambipolar characteristics.
홍성현,배종수,임창동,나영상,송명엽,Hong, Seong-Hyeon,Bae, Jong-Soo,Yim, Chang-Dong,Na, Young-Sang,Song, Myoung-Youp 한국수소및신에너지학회 2006 한국수소 및 신에너지학회논문집 Vol.17 No.2
The eutectic Mg-23.5%Ni alloy was casted by melting and solidification. The powders of Mg-23.5%Ni and (Mg-23.5%Ni)-10% iron oxide were prepared by mechanical grinding of casted Mg-Ni alloy and casted Mg-Ni alloy+oxide, respectively. As milling time increases, hydriding and dehydriding rates of Mg-Ni and Mg-Ni-oxide alloy powders increase. The additions of iron oxide to Mg-Ni alloy and Mg-Ni-oxide increase hydriding rates and slightly decrease dehydriding rates.
Niobium과 Cobalt를 첨가한 Multiferroic BiFeO<sub>3</sub> 박막의 유전 특성 및 자성 특성
전윤기,홍성현,Jun, Youn-Ki,Hong, Seong-Hyeon 한국세라믹학회 2008 한국세라믹학회지 Vol.45 No.9
The effects of Nb and Co ion substitution on the dielectric and magnetic properties of the multiferroic $BiFeO_3$ thin films have been investigated. Heteroepitaxial $BiFeO_3$ thin films were deposited by Pulsed Laser Deposition method. Nb substitution decreased the leakage current by 6 orders of magnitude and Co substituted $BiFeO_3$ thin films showed an enhanced magnetization, 2 times larger than that of un-substituted $BiFeO_3$. Through the co-substitution of Co and Nb, $BiFeO_3$ thin films with a low leakage current and an enhanced magnetization could be obtained.