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플라스틱 기판상에 제작된 PCBM 박막 트랜지스터의 전기적 특성에 대한 유기 용매 최적화의 효과에 대한 연구
형건우 ( Gun Woo Hyung ),이호원 ( Ho Won Lee ),구자룡 ( Ja Ryong Koo ),이석재 ( Seok Jae Lee ),김영관 ( Young Kwan Kim ) 한국유화학회 2012 한국응용과학기술학회지 Vol.29 No.2
유기 박막 트랜지스터 (organic thin-film transistors; OTFTs)는 유기 반도체 그리고 디스플레이와 같은 분야에 그들의 잠재적인 응용 가능성 때문에 많은 주목을 받고 있다. 하지만 급격한 산화 혹은 낮은 전기 이동도와 같은 단점으로 인하여 n-형 물질은 p-형 물질에 비해서 상대적으로 많은 연구가 진행되지 못한 실정이다. 따라서 본 논문에서는 n-형 반도체 물질인[6,6]-phenyl-C61-butyricacidmethylester (PCBM)과 Poly(4-vinylphenol) (PVP)을 유기 절연막으로 이용하여 o-dichlorobenzene, toluene and chloroform과 같은 다양한 유기 용매를 사용한 플라스틱기판에 유기트랜지스터를 제작하였고 유기 용매가 ODCB 경우 전계 효과 이동도는 약 0.034cm2/Vs 그리고 점멸비(on/off ratio)는 ~1.3×105 으로 향상 되었다. 다양한 유기 용매의 휘발성에 따라서 PCBM TFT의 전기적 특성에 미치는 영향을 규명하였다. Organic thin-film transistors (OTFTs) have received considerable attention because their potential applications for nano-scale thin-film structures have been widely researched for large-scale integration industries, such as semiconductors and displays. However, research in developing n-type materials and devices has been relatively shortage than developing p-type materials. Therefore, we report on the fabrication of top-contact [6,6]-phenyl-C61- butyricacidmethylester (PCBM) TFTs by using three different solvent, o-dichlorobenzene, toluene and chloroform. An appropriate choice of solvent shows that the electrical characteristics of PCBM TFTs can be improved. Moreover, our PCBM TFTs with the cross-linked Poly(4-vinylphenol) dielectric layer exhibits the most pronounced improvements in terms of the field-effect mobility (~ 0.034 cm2/Vs) and the on/off current ratio (~1.3×105) for our results. From these results, it can be concluded that solvent-modification of an organic semiconductor in PCBM TFTs is useful and can be extended to further investigations on the PCBM TFTs having polymeric gate dielectrics. It is expected that process optimizations using solution-processing of organic semiconductor materials will allow the development of the n-type organic TFTs for low-cost electronics and various electronic applications.
이동현,형건우,표상우,김영관,Lee, Dong-Hyun,Hyung, Gun-Woo,Pyo, Sang-Woo,Kim, Young-Kwan 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.4
The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride and 4,4'-oxydianiline. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of $0.4cm^2/Vs$, threshold voltage of -0.8 V and on-off current ratio of $10^6$. In addition, to improve the electrical characteristics of OTFT, we have reduced the thickness of adhesion layer up to a few nanometrs.
알루미늄 옥사이드 절연층의 증착율이 유기박막 트랜지스터의 특성에 미치는 영향
최경민,형건우,김영관,조의식,권상직,Choi, Kyung-Min,Hyung, Gun-Woo,Kim, Young-Kwan,Choi, Eou-Sik,Kwon, Sang-Jik 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.12
In this study, we fabricated pentacene organic thin film trasistors(OTFTs) which used aluminum oxide as the gate insulator. Aluminum oxide for OTFTs was deposited on glass substrate with a different deposition rate by E-beam evaporation. In case of the deposition rate of $0.1\;{\AA}$, the fabricated aluminum oxide gate insulating OTFT showed a threshold voltage of -1.36 V, an on/off current ratio of $1.9{\times}10^3$ and field effect mobility $0.023\;cm^2/V_s$.
폴리이미드 패시베이션과 폴리비닐알콜 패시베이션 레이어 성막이 고성능 유기박막 트렌지스터에 주는 영향
박일흥,형건우,최학범,황선욱,김영관,Park, Il-Houng,Hyung, Gun-Woo,Choi, Hak-Bum,Hwang, Sun-Wook,Kim, Young-Kwan 한국진공학회 2008 Applied Science and Convergence Technology Vol.17 No.3
이 논문에서 무기 게이트 인슐레이터 위에 Polyimide 유기 점착층을 성형하여, 고성능의 유기 박막 트렌지스터(OTFT)소자를 제작한 후 450 nm 두께로 폴리이미드를 Vapor deposition polymerization (VDP)방법을 사용하여 패시베이션하였다. 이때 폴리이미드성막을 위해, 스핀코팅 방법 대신 VDP 방법 도입하였다. 이 폴리이미드 고분자막은 2,2 bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA)와 4,4‘-oxydianiline(ODA)을 고진공에서 동시에 열증착 시킨 후, $170^{\circ}C$에서 2시간 열처리하여 고분자화 된 막을 형성하였다. 다른 종류의 유기 패시베이션 막이 소자에 주는 영향을 비교 분석하기 위해, 450 nm 두께로 스핀코팅법을 이용하여 폴리비닐알콜 패시베이션 막을 형성하였다. 이 두 가지 패시베이션 막 형성법이 소자의 문턱전압과, 전하이동도에 주는 영향을 전기적 특성을 통해 변화를 확실히 볼 수 있었다. 최초 유기 박막 트렌지스터의 전기적 특성은 문턱전압, 점멸비, 그리고 정공의 이동도는 각각, -3 V, 약 $10^6$ 그리고, $0.24cm^2$/Vs 이 측정되었고. 폴리이미드를 사용하여 패시베이션 후 특성이 각각 0 V, 약 $10^6$ 그리고, $0.26cm^2/Vs$, 폴리비닐알콜 패시베이션 경우는 특성이 각각, 문턱전압의 경우 0 V에서 +2 V로, 점멸비는 $10^6$에서 $10^5$으로 전계효과이동도는 $0.13cm^2/Vs$ 에서 $0.13cm^2/Vs$로 변화하였다. In this paper, it was demonstrated that organic thin-film transistors (OTFTs) were fabricated with the organic passivation layer by vapor deposition polymerization (VDP) processing. In order to form polymeric film as a passivation layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing. In order to investigate by compared with different passivation layer, the other OTFTs is fabricated to passivation by Polyvinylalcohol using spincoating. We can see that two different ways of passivation layer affect electric characteristic of OTFTs. The initial electric characteristic of OTFTs before passivation such as field effect mobility, threshold voltage, and on-off current ratio are $0.24cm^2/Vs$, -3V, and $10^6$, respectively. Then after polyimide passivation layer, field effect mobility change from $0.24cm^2/Vs$ to $0.26cm^2/Vs$, threshold voltage from -3V to 1V and on-off current ratio from $10^6$ to $10^6$, respectively. In the case of polyvinylalcohol passivation, the initial electric characteristic of OTFTs before passivation such as field effect mobility, threshold voltage, and on-off current ratio are $0.13cm^2/Vs$, 0V, and $10^6$, respectively. Then after polyvinylalcohol passivation layer, field effect mobility changes from $0.13cm^2/Vs$ to $0.13cm^2/Vs$, threshold voltage from 0V to 2V, and on-off current ratio from $10^6$ to $10^5$, respectively.
SiNx / 고분자 이중층 게이트 유전체를 가진 Zinc 산화물 박막 트랜지스터의 저온 공정에 관한 연구
이호원(Ho Won Lee),양진우(Jin Woo Yang),형건우(Gun Woo Hyung),박재훈(Jae Hoon Park),구자룡(Ja Ryong Koo),조이식(Eou Sik Cho),권상직(Sang Jik Kwon),김우영(Woo Young Kim),김영관(Young Kwan Kim) 한국유화학회 2009 한국응용과학기술학회지 Vol.27 No.2
Oxide semiconductors Thin-film transistors are an exemplified one owing to its excellent ambient stability and optical transparency. In particular zinc oxide (ZnO) has been reported because It has stability in air, a high electron mobility, transparency and low light sensitivity, compared to any other materials. For this reasons, ZnO TFTs have been studied actively. Furthermore, we expected that would be satisfy the demands of flexible display in new generation. In order to do that, ZnO TFTs must be fabricated that flexible substrate can sustain operating temperature. So, In this paper we have studied low-temperature process of zinc oxide(ZnO) thin-film transistors(TFTs) based on silicon nitride (SiNx) / cross-linked poly-vinylphenol (C-PVP) as gate dielectric. TFTs based on oxide fabricated by Low-temperature process were similar to electrical characteristics in comparison to conventional TFTs. These results were in comparison to device with SiNx / low-temperature C-PVP or SiNx / conventional C-PVP. The ZnO TFTs fabricated by low-temperature process exhibited a field-effec mobility of 0.205 cm2/Vs, a thresholdvoltage of 13.56 V and an on/off ratio of 5.73 x 106. As a result, We applied experimental for flexible PET substrate and showed that can be used to ZnO TFTs for flexible application.