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한철구(Cheolju Han),심이성(Ie-Sung Shim) 인간식물환경학회 2020 인간식물환경학회지 Vol.23 No.2
In order to increase the indoor air purification effect of plants, plants need to be placed on 5-10% of indoor spaces. To increase the density and utilization of plants in indoor spaces, studies on bio-wall, a vertical green wall system, have been recently conducted. The purpose of this study was to investigate the growth characteristics of 7 indoor plants introduced to the system and their rooting zones at different irrigation cycles. This study was conducted to investigate a proper irrigation cycle for the continuous maintenance of bio-wall systems. The conditions of their growth environment were maintained as follows: light intensity, 20-50 μmol·m⁻²·s⁻¹ PPFD; and temperature, 20 - 25℃. For fertilization, Hyponex diluted with water at the ratio of 1:1,000 was supplied to plants. Irrigation was treated at intervals of 1, 3, 5, and 7 days for 1 hour at a time. As a result, there was no significant difference in the growth of plants between different irrigation cycles. Dieffenbachia ‘Marianne’ showed a significant decrease in the number of leaves at the irrigation cycle of 7 days. In addition, the chlorophyll content was relatively low at the irrigation cycle of 7 days. In terms of the color of leaves, a decrease in L value and b value and an increase in a value were observed, resulting in changes in brightness and color. Ardisia pusilla Variegata showed a slightly higher photosynthetic activity and stomatal conductance when it was watered every day and once per 5 days, while Epipremnum aureum showed a relatively higher photosynthetic activity and stomatal conductance at the irrigation cycle of 3 days. In the case of root activity, it was found that the longer irrigation cycle, the higher root activity compared to daily irrigation. The development of roots of Peperomia clusiifolia was promoted by watering at long intervals. However, in the case of Aglaonema ‘Siam-Aurora’, the total number of roots decreased at the interval of 7 days. In conclusion, a proper irrigation cycle for the sustainable maintenance of vertical bio-wall systems seems to be 3 days.
Improved Dc Characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au Electrode Schemes
김태근,한철구,김수진,이영수,최홍구 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.56 No.4
We report on the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs)fabricated with Ti/Al/Ti/Ni/Au multilayer ohmic electrodes on Si substrates. The specific contact resistance of the proposed electrode is as low as 8.8 × 10−7cm2, 5.7 times lower than that of the conventional Ti/Al/Ni/Au electrode. AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au ohmic electrodes show a high extrinsic transconductance of 104 mS/mm and a maximum current density of 346mA/mm, which values are increased by 15.5% and 54%, respectively, as compared to those observed from the AlGaN/GaN HEMTs with Ti/Al/Ni/Au ohmic electrodes.
내병성 버어리종 신품종 "KB 101"의 육성경과 및 특성
김대송,조천준,한철구,추홍구,정석훈,조명조,이승철 한국연초학회 1992 한국연초학회지 Vol.14 No.2
KB 101 is a bacterial wilt(Pseudomonas solanaceamm E.F. Smith) and black shank (Phytophthora nicotianae Breda de Haan Var. nicotianae Waterhouse) resistant cultivar of burley tobacco (Nicotiana tabacum L.) KB 101 was developed by the Korea Ginseng&Tobacco Research Institute, and released in 1987. KB 101 was developed from a single plant selection in the F2 generation derived from the double cross, [(Burley 21X Burley 37) X (Burley 64X Ky 16)]. Burley 37 and Burley 64 were the source of resistance to bacterial wilt and black shank. Yield trials were conducted in the Fs through F6 generations at the four Exp. Stn. of Korea Ginseng &Tobacco Research Institute as JB 7705-1. On-farm yield trials were conducted in the F7 through F9 generations at the 45 locations of burley tobacco growing area from 1984 to 1986 as KB 101. KB 101 has an erect growth habit similar to that of Burley 21: plant size is larger and has more leaves than those of Burley 21. It is late maturing cultivar that flowers approximately 3 days later than Burley 21. The physical characteristics and chemical composition of KB 101 were similar to those of Burley 21.
Sapphire SiC, Si 기판에 따른 AlGaN/GaN HEMT의 DC 전기적 특성의 시뮬레이션과 분석
김수진,김동호,김재무,최홍구,한철구,김태근,Kim, Su-Jin,Kim, Dong-Ho,Kim, Jae-Moo,Choi, Hong-Goo,Hahn, Cheol-Koo,Kim, Tae-Geun 한국전기전자학회 2007 전기전자학회논문지 Vol.11 No.4
In this paper, we report on the 2D (two-dimensional) simulation result of the DC (direct current) electrical and thermal characteristics of AlGaN/GaN HEMTs (high electron mobility transistors) grown on Si substrate, in comparison with those grown on sapphire and SiC (silicon carbide) substrate, respectively. In general, the electrical properties of HEMT are affected by electron mobility and thermal conductivity, which depend on substrate material. For this reason, the substrates of GaN-based HEMT have been widely studied today. The simulation results are compared and studied by applying general Drift-Diffusion and thermal model altering temperature as 300, 400 and 500 K, respectively. With setting T=300 K and $V_{GS}$=1 V, the $I_{D,max}$ (drain saturation current) were 189 mA/mm for sapphire, 293 mA/mm for SiC, and 258 mA/mm for Si, respectively. In addition, $G_{m,max}$ (maximum transfer conductance) of sapphire, SiC, Si was 38, 50, 31 mS/mm, respectively, at T=500 K. 본 논문에서는 최근 고출력 및 고온 분야의 반도체 분야에 널리 이용되고 있는 AlGaN/GaN 고 전자 이동도 트랜지스터 (High Electron Mobility Transistor, HEMT) 에 대해 DC (direct current) 특성과 열 특성을 기판을 달리하며 시뮬레이션을 수행하였다. 일반적으로 HEMT 소자의 전자 이동도 및 열전도 특성은 기판의 영향이 그 특성을 크게 좌우한다. 이러한 문제점으로 인해 GaN 기반의 HEMT 소자의 기판에 대한 연구가 활발히 진행되고 있다. 따라서, 일반적인 Drift-Diffusion 모델과 열 모델을 이용하여 Si, sapphire, SiC (silicon carbide)으로 각각 기판을 변화시키며 시뮬레이션을 하였다. 열 모델 시뮬레이션은 온도를 각각 300, 400, 500K로 변화시키며 그 결과를 비교, 해석 하였다. 전류-전압 (I-V) 특성을 T= 300 K, $V_{GS}$=1 V의 조건에서 시뮬레이션 한 결과, 드레인 포화전류 ($I_{D,max}$)의 값과 sapphire 기판은 189 mA/mm, SiC 기판은 293 mA/mm, Si 기판은 258 mA/mm 를 나타내었다. 또한 T= 500 K에서 최대 전달컨덕턴스($G_{m,max}$)는 각각 38, 50, 31 mS/mm 를 나타내었다.