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Electrical Characteristics of TMAH-Surface Treated Ni/Au/Al2O3/GaN MIS Schottky Structures
프라탑 렙디,이정희,장자순 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.2
The electrical characteristics and reverse leakage mechanisms of tetramethylammonium hydroxide (TMAH) surface-treated Ni/Au/Al2O3/GaN metal-insulator-semiconductor (MIS) diodes were investigated by using the current-voltage (I-V) and capacitance-voltage (C-V) characteristics. The MIS diode was formed on n-GaN after etching the AlGaN in the AlGaN/GaN heterostructures. The TMAH-treated MIS diode showed better Schottky characteristics with a lower ideality factor, higher barrier height and lower reverse leakage current compared to the TMAH-free MIS diode. In addition, the TMAH-free MIS diodes exhibited a transition from Poole-Frenkel emission at low voltages to Schottky emission at high voltages, whereas the TMAH-treated MIS diodes showed Schottky emission over the entire voltage range. Reasonable mechanisms for the improved device-performance characteristics in the TMAH-treated MIS diode are discussed in terms of the decreased interface state density or traps associated with an oxide material and the reduced tunneling probability.
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Y. Ashok Kumar Reddy,B. Ajitha,P. Sreedhara Reddy,프라탑 렙디,이정희 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.5
NiO-Ag thin films were deposited on Corning 7059 glass substrates by DC reactive magnetron sputtering technique and investigated the substrate temperature (Ts) dependent properties of NiO-Ag thin films. X-ray diffraction results showed that crystalline films can be obtained at high Ts and all films have a preferred crystal growth texture with face centered cubic (fcc) structure and was also confirmed by Raman studies. The grain size, transmittance, band gap, mobility and carrier concentrations were increased with Ts. Room temperature deposited films have an average roughness around 6.9 nm where as increment of Ts resulted in increased roughness up to 14 nm with nanocrystalline morphology. The optimum substrate temperature to obtain NiO-Ag films was found to be 200°C. It was found that with increasing the Ts, resistivity of the films was significantly decreased.
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