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Transition metal oxides have attracted considerable attention as a switching material for resistiverandom access memory (RRAM) based on the thermochemical mechanism (TCM). However, the heatenergy required for resistance switching is applied to the entire area of the RRAM without positionselectivity, causing random growth of conductivefilaments (CFs) and degrading device performance. Thisstudy showed that structured electrodes can promote the TCM in nickel oxide (NiO)-based RRAM byenhancing the electricfield within the switching material and controlling Joule heat generation locally. Pyramid-structured electrodes with an extremely sharp tip prepared by the template-stripping methodachieve an electricfield in the tip region that is5 times larger than that of conventional planarelectrodes. The tip-enhanced electricfield can induce a local temperature rise, which facilitates the TCMfor nucleation and CF growth. The resulting RRAMs exhibit low and reliable forming, SET and RESETvoltages (1.96 0.14 V, 1.44 0.12 V, and 0.64 0.05 V, respectively). Moreover, their retention time andresistance ratio (RHRS/RLRS) are greatly improved, by 10 and 102 times, respectively, compared to planardevices. This approach can achieve position selectivity in TCM-based resistance switching, and could leadto the development of high-performance RRAM.
Carbon fiber reinforced polyetheretherketone (CFRPEEK) has adjustable mechanical properties similar to cortical bone and is employed as one of the most potential candidates for replacing surgical metallic implants. However, the bioinertness of CFRPEEK limit its implant application. Herein, we show a simple and effective method to prepare CFRPEEK–hydroxyapatite (HA) composites with improved mechanical properties and bioactivity. In the solid-state processing, the chamber with the rotor applies strong shear, compression and friction force to the mixed materials, leading to good dispersion of fillers. The resulting nanocomposites exhibited improved mechanical properties and bioactivity. In particular, the degradation in flexural strength at high HA content was prevented, which showed superior results compared to the control in in vitro cell-compatibility test. Therefore, this process can produce polymer composites with improved functionalities, greatly extending implant applications.
We fabricated a titanium oxide (TiO2) resistive memory device utilized to naturally erasable device with asimple cross-bar array structure inhibiting sneak paths using selecting property. The Al/TiO2/Al memorydevice showed conventional nonvolatile and bipolar resistive switching properties with a vacancy-baseddrift conduction procedure. The conductingfilament could be removed through redistribution of theoxygen vacancy to the active bulk region resulting in self-erasable properties, which have made itpossible to guide unwanted information to be removed naturally. This self-erasable memory device hasthe potential to be utilized for the storage of susceptible information which should be eliminated after asufficient length of time.