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A Study on the Electrical Characteristic Analysis of c-Si Solar Cell Diodes
최평호,김효중,백도현,최병덕 대한전자공학회 2012 Journal of semiconductor technology and science Vol.12 No.1
study on the electrical characteristic analysis of solar cell diodes under experimental conditions of varying temperature and frequency has been conducted. From the current-voltage (I-V)measurements, at the room temperature, we obtained the ideality factor (n) for Space Charge Region (SCR)and Quasi-Neutral Region (QNR) of 3.02 and 1.76,respectively. Characteristics showed that the value of n (at SCR) decreases with rising temperature and n (at QNR) increases with the same conditions. These are due to not only the sharply increased SCR current flow but the activated carrier recombination in the bulk region caused by defects such as contamination,dangling bonds. In addition, from the I-V measurements implemented to confirm the junction uniformity of cells, the average current dispersion was 40.87% and 10.59% at the region of SCR and QNR, respectively. These phenomena were caused by the pyramidal textured junction structure formed to improve the light absorption on the device’s front surface, and these affect to the total diode current flow. These defect and textured junction structure will be causes that solar cell diodes have non-ideal electrical characteristics compared with general p-n junction diodes. Also, through the capacitance-voltage (C-V) measurements under the frequency of 180 kHz,we confirmed that the value of built-in potential is 0.63 V.
Enhanced Efficiency of Multicrystalline Silicon Solar Cells Made via UV Laser Texturing
최평호,김종민,김문수,조재희,백도현,김상수,최병덕 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.67 No.6
Multicrystalline silicon (mc-Si) solar cells were developed by using a direct laser texturing method. Approximately 10-μm-deep and 10-μm-diameter cone-shaped grooves, with an aspect ratio (determined by the depth-to-diameter ratio) of one, were produced on the wafer’s surface by using a 355-nm-wavelength ultraviolet (UV) laser process. After slag removal and chemical etching, Vshaped cross-sectional microstructures were regularly arranged in a honeycomb disposition on the surface. Compared to the mc-Si solar cell textured by using isotropic acidic etching, the surface reflectance was reduced to 3.3% and the short-circuit current increased to 0.8 mA/cm2 when the cell was treated with UV laser ablation. The solar cell values were achieved from the increased electron-hole pairs (EHPs) generated by the enhanced bouncing of incident light, which was aided by the V-shaped microstructures. The cell efficiency of a UV-laser-textured cell was improved to 16.1% compared to the 15.5% for an acidic-solution-textured cell.