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      • SCOPUSKCI등재

        해양미세조류의 라디칼소거활성 검색

        최진석,이원갑,김동수,최홍대,최재수,정지형,임광식,최원철,손병화,Choi, Jin-Seok,Lee, Won-Kap,Kim, Dong-Soo,Choi, Hong-Dae,Choi, Jae-Sue,Jung, Jee H.,Im, Kwang-Sik,Choi, Won-Chul,Son, Byeng-Wha 한국생약학회 2000 생약학회지 Vol.31 No.2

        In order to screen new radical scavenging principle which is expected to be antiaging drug lead, we have investigated 1,1-diphenyl-2-picrylhydrazyl (DPPH) radical scavenging activity of the marine microalgae, greenalgae(10 speices), diatom (10 speices) and blue-green algae (10 speices). The significant activities$(IC_{50}:\;<100\;{mu}g/ml)$ were observed in 4 species of green algae (MA002, 006, 009, 010), 1 species of diatom (MA015) and 5 species of blue-green algae (MA017, 018, 019, 024, 025). Within the scope of family tested, MA009 $(IC_{50}:\;=78\;{mu}g/ml)$, MA015 $(IC_{50}:\;=38\;{mu}g/ml)$ and MA019 $(IC_{50}:\;=41\;{mu}g/ml)$ displayed the most significant activity. Among the marine microalgae tested at family level, cyanophycean blue-green algae was shown to be the most active family on screening of new bioactive compounds.

      • SCOPUSKCI등재

        국내에서 개발된 3차원 임플란트 가상시술 시스템에 의한 영상재구성상의 정확도

        최진석,김은경,한원정,Choi Jin-Seok,Kim Eun-Kyung,Han Won-Jeong 대한영상치의학회 2003 Imaging Science in Dentistry Vol.33 No.3

        Purpose: To compare the measurements of the mandible and the detectability of the mandibular canal on reformatted images using a newly developed 3-dimensional implant simulation program with traditionally used CT multiplanar reconstruction program and true measurements. Materials and Methods: Ten dry dog mandibles were used in this study. Occlusal templates for CT examination were fabricated and marked with gutta perch a at ten sites. Axial CT scans were taken and reconstructed using DentaScan (D group) and Vimplant program (V group), and each mandible was sectioned at the previously marked sites (R group). Maximum vertical height (H) and maximum width (W) of the mandible, the distances from buccal border of the mandibular canal to the most buccal aspect of the mandible (X), and the distance from the superior border of the mandibular canal to the alveolar crest (Y) were measured, and the mandibular measurements in each group were compared. Detectability of mandibular canal was evaluated using a 3-point scale in both V and D groups by three oral radiologists and compared. Results: H in the V group was slightly greater than that in the D group, and Wand X in the V group was slightly less than those in the D group. H in the V group was less than that in the R group, and Wand X in the V group was larger than those in the R group. The detectability of the mandibular canal did not show statistically significant differences between V and D groups. Conclusion: The results of the experiment show that the newly developed, inexpensive Vimplant/TM/ simulation program can be used as an alternative to the traditionally used, and more expensive CT multiplanar reconstruction program.

      • SCOPUSKCI등재

        Dopant가 주입된 poly-Si 기판에서 Ta-silicides의 형성 및 dopant 의 거동에 관한 연구

        최진석,조현춘,황유상,고철기,백수현,Choi, Jin-Seok,Cho, Hyun-Choon,Hwang, Yu-Sang,Ko, Chul-Gi,Paek, Su-Hyon 한국재료학회 1991 한국재료학회지 Vol.1 No.2

        Ta-silicide의 게이트 전극 및 비트라인(bit line)으로의 사용가능성을 알아보기 위하여 As, P, $BF_2$가 $5{\times}10^15cm^-2$의 농도로 이온주입된 다결정 실리콘에 탄탈륨을 스퍼터링으로 증착한 후 급속 열처리로 Ta-silicide를 형성하였다. 형성된 Ta-silicide의 특성은 4-탐침법, X-rayghlwjf, SEM 단면사진과 ${\alpha}$-step으로 조사하였으며, 불순물들의 거동은 Secondary Ion Mass Spectroscopy(SIMS)로 알아보았다. $TaSi_2$의 형성은 $800^{\circ}C$에서 시작하며 $1000^{\circ}C$ 이상에서 완료됨을 알았다. 형성된 $TaSi_2$층으로 out-diffusion 하였다. Trantalum thin films have been prepared by DC sputtering onto As, P, and $BF_2$-implanted ($5{\times}10^15cm^-2$) poly-silicon. The heat treatments by rapid thermal annealing(RTA) have been applied to these samples for the formation of silicides. We have studied the application possibility of Ta-silicide as gate electrode and bit line. The silicide formation and the dopant diffusion after the heat treatment were investigated by various methods, such as four-point probe, X-ray, SEM cross sectional views, ${\alpha}$-step, and SIMS, The tantalum disilicide($TaSi_2$) are formed in the temperature above $800^{\circ}C$, and grown in colummar structure. $TaSi_2$ has a good surface roughness, having range from $80{\AA}\;to\;120{\AA}$, and implanted dopants are incoporated into the $TaSi_2$ layer during the RTA temperature.

      • SCOPUSKCI등재

        Composite Target으로 증착된 Ti-silicide의 현성에 관한 연구[II]

        최진석,백수현,송영식,심태언,이종길,Choi, Jin-Seog,Paek, Su-Hyon,Song, Young-Sik,Sim, Tae-Un,Lee, Jong-Gil 한국재료학회 1991 한국재료학회지 Vol.1 No.4

        Composite $TiSi_{2.6}$ target으로 부터 Ti-silicide를 형성시 단결정 Si기판과 다결정 Si내의 dopant의 확산 거동, 그리고 Ti-silicide 박막의 표면 거칠기를 secondary ion mass spectrometry (SIMS), 4-point probe, X-선 회절 분석, 표면 거칠기 측정을 통해 조사하였다. X-선 회절 분석결과 중착된 직후의 중착막은 비정질이었고, 단결정 Si기판에 증착된 막은 $800^{\circ}C$에서 20초간 급속 열처리 시 orthorhombic $TiSi_2$(C54 구조)로 결정화가 이루어졌다. 단결정 Si 기판과 다결정 Si에서 Ti-silicide 충으로의 dopant의내부 확산은 거의 발생하지 않았으며, 주입된 불순물들은 Ti-silicide/Si 계면 근처의 단결정 Si이나 다결정 Si 내부에 존재하고 있었다. 또한 형성된 Ti-silicide 박막의 표면 거칠기는 16-22nm이었다. The surface roughnesses of titanium silicide films and the diffusion behaviours of dopants in single crystal and polycrystalline silicon substrates durng titanium silicide formation by rapid thermal annealing(RTA) of sputter deposited Ti-filicide film from the composite $TiSi_{2.6}$ target were investigated by the secondary ion mass spectrometry(SIMS), a four-point probe, X-ray diffraction, and surface roughness measurements. The as-deposited films were amorphous but film prepared on single silicon substrate crystallized to the orthorhombic $TiSi_2$(C54 structure) upon rapid thermal annealing(RTA) at $800^{\circ}C$ for 20sec. There was no significant out-diffusion of dopants from both single crystal and polycrystalline silicon substrate into titanum silicide layers during annealing. Most of the implanted dopants piled up near the titanium silicide/silicon interface. The surface roughnesses of titanium silicide films were in the range between 16 and 22nm.

      • KCI등재

        레저스포츠로 인한 안외상의 역학적 고찰

        최진석,신경환,Jin Seok Choi,Kyung Hwan Shin,Ph,D 대한안과학회 2008 대한안과학회지 Vol.49 No.10

        Purpose: We investigated the epidemiological and clinical characteristics of leisure activity- and sports-related ocular trauma for application to its treatment and prevention. Methods: A retrospective chart review was conducted on 121 patients who visited Gachon University Gil Medical Center from January 2006 to December 2007 because of leasure activity- and sports-related ocular trauma. The incidence of ocular injuries, sex and age, monthly and seasonal distribution, causes, diagnosis, and visual acuity were reviewed. Results: Among the 1592 patients of ocular trauma, 121 patients (7.6%) were related to leasure activity- and sports. The incidence was higher in males (81.8%; 4.5-fold) than in females. The mean age of patients was 23.7±7.1 years. Ocular injuries occurred least in winter (19.8%) and occurred more during the week than on weekends (1.6-fold). The most common cause was soccer (39.7%), more specifically being hit with the soccer ball (47.1%). The initial LogMAR visual acuity was worse in the females and in the patients older than 30 years. Traumatic hyphema (19.7%) was the most common cause of visual disturbance, and corneal erosion (11.3%) occurred frequently. Conclusions: Leasure activity- and sports-related ocular trauma is becoming an increasingly significant cause of ocular morbidity, and trends relating to characteristics such as sex and age were found. These outcomes can be put to practical use in the prevention and treatment of sports-relatedocular injuries. J Korean Ophthalmol Soc 2008;49(10):1658-1664

      • KCI등재

        물유리를 이용한 나노실리카 제조 시 pH가 미치는 영향

        최진석,안성진,Choi, Jin Seok,An, Sung Jin 한국재료학회 2015 한국재료학회지 Vol.25 No.4

        Synthesis of nano-silica using water glass in a Sol-Gel process is one of several methods to manufacture nano-silica. In nano-silica synthesized from water glass, there are various metal impurities. However, synthesis of nano-silica using water glass in a Sol-Gel process is an interesting method because it is relatively simple and cheap. In this study, nano-silica was synthesized from water glass; we investigated the effect of pH on the synthesis of nano-silica. The morphology of the nanosilica with pH 2 was flat, but the surface of the nano-silica with pH 10 had holes similar to small craters. As a result of ICP-OES analysis, the amount of Na in the nano-silica with pH 2 was found to be 170 mg/kg. On the other hand, the amount of Na in the nano-silica with pH 10 was found to be 56,930 mg/kg. After calcination, the crystal structure of the nano-silica with pH 2 was amorphous. The crystal structure of the nano-silica with pH 10 transformed from amorphous to tridymite. This is because elemental Na in the nano-silica had the effect of decreasing the phase transformation temperature.

      • KCI등재
      • KCI등재

        Ag/Sn/Ag 샌드위치 구조를 갖는 Backside Metallization을 이용한 고온 반도체 접합 기술

        최진석,안성진,Choi, Jinseok,An, Sung Jin 한국마이크로전자및패키징학회 2020 마이크로전자 및 패키징학회지 Vol.27 No.1

        The backside metallization process is typically used to attach a chip to a lead frame for semiconductor packaging because it has excellent bond-line and good electrical and thermal conduction. In particular, the backside metal with the Ag/Sn/Ag sandwich structure has a low-temperature bonding process and high remelting temperature because the interfacial structure composed of intermetallic compounds with higher melting temperatures than pure metal layers after die attach process. Here, we introduce a die attach process with the Ag/Sn/Ag sandwich structure to apply commercial semiconductor packages. After the die attachment, we investigated the evolution of the interfacial structures and evaluated the shear strength of the Ag/Sn/Ag sandwich structure and compared to those of a commercial backside metal (Au-12Ge).

      • KCI등재

        폴리스타이렌을 이용한 그래핀 합성 및 산화 붕소가 그래핀 합성에 미치는 영향

        최진석,안성진,Choi, Jinseok,An, Sung Jin 한국재료학회 2018 한국재료학회지 Vol.28 No.5

        Graphene is an interesting material because it has remarkable properties, such as high intrinsic carrier mobility, good thermal conductivity, large specific surface area, high transparency, and high Young's modulus values. It is produced by mechanical and chemical exfoliation, chemical vapor deposition (CVD), and epitaxial growth. In particular, large-area and uniform single- and few-layer growth of graphene is possible using transition metals via a thermal CVD process. In this study, we utilize polystyrene and boron oxide, which are a carbon precursor and a doping source, respectively, for synthesis of pristine graphene and boron doped graphene. We confirm the graphene grown by the polystyrene and the boron oxide by the optical microscope and the Raman spectra. Raman spectra of boron doped graphene is shifted to the right compared with pristine graphene and the crystal quality of boron doped graphene is recovered when the synthesis time is 15 min. Sheet resistance decreases from approximately $2000{\Omega}/sq$ to $300{\Omega}/sq$ with an increasing synthesis time for the boron doped graphene.

      • KCI등재

        이온 주입법을 이용한 ZnO 박막의 As 도핑

        최진석,안성진,Choi, Jin Seok,An, Sung Jin 한국재료학회 2016 한국재료학회지 Vol.26 No.6

        ZnO with wurtzite structure has a wide band gap of 3.37 eV. Because ZnO has a direct band gap and a large exciton binding energy, it has higher optical efficiency and thermal stability than the GaN material of blue light emitting devices. To fabricate ZnO devices with optical and thermal advantages, n-type and p-type doping are needed. Many research groups have devoted themselves to fabricating stable p-type ZnO. In this study, $As^+$ ion was implanted using an ion implanter to fabricate p-type ZnO. After the ion implant, rapid thermal annealing (RTA) was conducted to activate the arsenic dopants. First, the structural and optical properties of the ZnO thin films were investigated for as-grown, as-implanted, and annealed ZnO using FE-SEM, XRD, and PL, respectively. Then, the structural, optical, and electrical properties of the ZnO thin films, depending on the As ion dose variation and the RTA temperatures, were analyzed using the same methods. In our experiment, p-type ZnO thin films with a hole concentration of $1.263{\times}10^{18}cm^{-3}$ were obtained when the dose of $5{\times}10^{14}$ As $ions/cm^2$ was implanted and the RTA was conducted at $850^{\circ}C$ for 1 min.

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