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Synchrotron infrared spectroscopy and its applications
채복남 한국공업화학회 2018 한국공업화학회 연구논문 초록집 Vol.2018 No.0
Most synchrotron facilities offer a port dedicated to infrared (IR) spectroscopy and infrared-microspectroscopy. The main advantage of synchrotron-based infrared spectroscopy is the brightness of synch-rotron radiation source. The synchrotron radiation source provides brightness 2-3 orders of magnitude higher than a thermal infrared source. Thus, synchrotron based infrared spectroscopy has allowed high spatial resolution and high spectral resolution, especially for low throughput technologies and far-infrared spectroscopy. Infrared beamlines are now facing an increasing demand of beamtime from various disciplines: Polymer Science, Biology, biomedical applications, Earth Science, Environmental science, Chemistry, Cultural Heritage, Archaeology and soft matter. Synchrotron-based infrared spectroscopy and its applications will be presented. In addition, the current status of infrared beamline of PAL will be discussed.
Near-field infrared nanoscopic study of EUV- and e-beam-exposed hydrogen silsesquioxane photoresist
김지훈,이진균,채복남,안진호,이상설 나노기술연구협의회 2022 Nano Convergence Vol.9 No.53
This article presents a technique of scattering-type scanning near-field optical microscopy (s-SNOM) based on scanning probe microscopy as a nanoscale-resolution chemical visualization technique of the structural changes in photoresist thin films. Chemical investigations were conducted in the nanometer regime by highly concentrated near-field infrared on the sharp apex of the metal-coated atomic force microscopy (AFM) tip. When s-SNOM was applied along with Fourier transform infrared spectroscopy to characterize the extreme UV- and electron-beam (e-beam)-exposed hydrogen silsesquioxane films, line and space patterns of half-pitch 100, 200, 300, and 500 nm could be successfully visualized prior to pattern development in the chemical solutions. The linewidth and line edge roughness values of the exposed domains obtained by s-SNOM were comparable to those extracted from the AFM and scanning electron microscopy images after development. The chemical analysis capabilities provided by s-SNOM provide new analytical opportunities that are not possible with traditional e-beam-based photoresist measurement, thus allowing information to be obtained without interference from non-photoreaction processes such as wet development.