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유기 킬레이터 물질의 고밀도 플라즈마를 이용한 구리 박막의 나노미터 스케일 식각
이지수,임은택,차문환,박성용,정지원 한국전기전자재료학회 2021 전기전자재료학회논문지 Vol.34 No.3
Inductively coupled plasma reactive ion etching (ICP-RIE) of copper thin films patterned with SiO2 hard masks was carried out using piperidine/O2/Ar gas mixture. The etch rate, etch selectivity, and etch profile of copper thin filmswere investigated by varying gas concentration in piperidine/O2/Ar gas mixture. In addition, the etch parameters including ICP RF power, DC-bias voltage to substrate, and process pressure were varied to examine the etch characteristics. X-ray photoelectron spectroscopy and optical emission spectroscopy were employed to elucidate the etch mechanism under piperidine/O2/Ar gas chemistry. Finally, 150 nm-line patterned copper thin films were successfully etched using piperidine/O2/Ar etch gas under the optimized etch conditions.
유기 물질을 사용한 구리박막의 건식 식각에 대한 헥사플루오로이소프로판올 첨가의 영향
박성용,임은택,차문환,이지수,정지원,Park, Sung Yong,Lim, Eun Teak,Cha, Moon Hwan,Lee, Ji Soo,Chung, Chee Won 한국재료학회 2021 한국재료학회지 Vol.31 No.3
Dry etching of copper thin films is performed using high density plasma of ethylenediamine (EDA)/hexafluoroisopropanol (HFIP)/Ar gas mixture. The etch rates, etch selectivities and etch profiles of the copper thin films are improved by adding HFIP to EDA/Ar gas. As the EDA/HFIP concentration in EDA/HFIP/Ar increases, the etch rate of copper thin films decreases, whereas the etch profile is improved. In the EDA/HFIP/Ar gas mixture, the optimal ratio of EDA to HFIP is investigated. In addition, the etch parameters including ICP source power, dc-bias voltage, process pressure are varied to examine the etch characteristics. Optical emission spectroscopy results show that among all species, [CH], [CN] and [H] are the main species in the EDA/HFIP/Ar plasma. The X-ray photoelectron spectroscopy results indicate the formation of CuCN compound and C-N-H-containing polymers during the etching process, leading to a good etch profile. Finally, anisotropic etch profiles of the copper thin films patterned with 150 nm scale are obtained in EDA/HFIP/Ar gas mixture.