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MMIC상에서 주기적으로 배치된 용량성 소자를 이용한 단파장 전송선로
정장현(Jang-Hyeon Jung),박영배(Young-Bae Park),정보라(Bo-Ra Jung),주정갑(Jeong-Gab Ju),강석엽(Suk-Youb Kang),윤영(Young Yun) 한국마린엔지니어링학회 2010 한국마린엔지니어링학회 학술대회 논문집 Vol.2010 No.4
In this study, short-wavelength transmission line employing periodically arrayed capacitive devices (PACD) structures were developed for application to a development of miniaturized on-chip passive components on GaAs monolithic microwave integrated circuit (MMIC). The transmission line employing PACD structure showed a wavelength much shorter than conventional microstrip line. Concretely, the wavelength of the transmission line employing PACD structure was 8% of the conventional microstrip line on GaAs substrate at 5㎓.
실리콘 RFIC상에서 주기적으로 배열된 접지 스트립 구조를 가지는 개방선로의 특성 연구
정보라(Bo-Ra Jung),박영배(Young-Bae Park),주정갑(Jeong-Gab Ju),정장현(Jang-Hyeon Jeong),강석엽(Suk-Youb Kang),윤영(Young Yun) 한국마린엔지니어링학회 2010 한국마린엔지니어링학회 학술대회 논문집 Vol.2010 No.4
In this paper, we studied about open stub employing PAGS(Periodically arrayed ground-strip structure) for application to miniaturized on-chip passive component on silicon RFIC. As it is known, PAGS has slow-wave characteristic due to its periodic structure. In this work, using this characteristic in periodic structure, we propose about highly miniaturized passive components on silicon RFIC.
0.13 ㎛ CMOS 기술을 이용한 K 밴드 차량 레이다용 레지스트브 믹서
박영배(Young-Bae Park),정보라(Bo-Ra Jung),주정갑(Jeong-Gab Ju),정장현(Jang-Hyeon Jeong),강석엽(Suk-Youb Kang),윤영(Young Yun) 한국마린엔지니어링학회 2010 한국마린엔지니어링학회 학술대회 논문집 Vol.2010 No.4
This paper presents a low-power front-ended 24 ㎓ receiver resistive mixer, which was fabricated using 0.13 ㎛ RF CMOS technology for application to vehicle radar. For resistive receiver mixer, single ended resistive mixer was designed for high linearity characteristic and low power consumption. According to measured results, the proposed resistive mixer showed an improved linearity and low power consumption characteristic. At 24 ㎓, the resistive receiver mixer showed a conversion loss of -9 ㏈ and an input 1-㏈ gain compression point of -1 ㏈m at a low bias voltage of 0.3 V.