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SADS(Siliide As Diffusion Source)법으로 형성한 코발트 폴리사이트 게이트의 C-V특성
정연실,배규식 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.7
160nm thick amorphous Si and polycrystalline Si were each deposited on to 10nm thick SiO$_2$, Co monolayer and Co/Ti bilayer were sequentially evaporated to form Co-polycide. Then MOS capacitors were fabricated by BF$_2$ ion-implantation. The characteristics of the fabricated capacitor samples depending upon the drive-in annel conductions were measured to study the effects of thermal stability of CoSi$_2$and dopant redistribution on electrical properties of Co-polycide gates. Results for capacitors using Co/Ti bilayer and drive-in annealed at 80$0^{\circ}C$ for 20~40sec. showed excellent C-V characteristics of gate electrode.
정연실 한국중국언어학회 2014 중국언어연구 Vol.0 No.52
论文以《隸辨》(卷第六)为研究对象分析它的体例,阐述它的价值。体例可分为如下:1)标题偏旁 2)某字阙 3)读音与后起字 4)小篆与隶书的字形比较 5)隶书偏旁的演变 6)异体偏旁 7)偏旁的代替现象 8)其他术语。价值可归纳为如下:1)提高《隸辨》的应用价值 2)提供有关偏旁的相关资料 3)提供丰富的偏旁代替资料。
정연실,구본철,배규식,Jeong, Yeon-Sil,Gu, Bon-Cheol,Bae, Gyu-Sik 한국재료학회 1999 한국재료학회지 Vol.9 No.11
5~10nm 두께의 얇은 산화막 위에 $\alpha$-실리콘과 Co/Ti 이중막을 순차적으로 증착하고 급속열처리하여 코발트 폴리사이드 전극을 만든 후, SADS법으로 다결정 Si을 도핑하여 MOS 커패시터를 제작하였다. 이때 drive-in 열처리조건에 따른 커패시터의 C-V 특성과 누설전류를 측정하여, $\textrm{CoSi}_{2}$의 열적안정성과 도판트 (B 및 As)의 재분포가 Co-폴리사이드 게이트의 전기적 특성에 미치는 영향을 연구하였다.$ 700^{\circ}C$에서 60~80초간 열처리시, 다결정 Si층의 도핑으로 우수한 C-V 특성과 낮은 누설전류를 나타냈으나, 그 이상 장시간 또는 $900^{\circ}C$의 고온에서는 $\textrm{CoSi}_{2}$의 분해에 따른 Co의 확산으로 전기적 특성이 저하되었다. SADS법으로 Co-폴리사이드 게이트 전극을 형성할 때, 도판트가 다결정 Si층으로 충분히 확산되는 것뿐만 아니라, $\textrm{CoSi}_{2}$의 분해를 억제하는 것이 매우 중요하다. Amorphous Si and Co/Ti bilayers were sequentially evaporated onto 5- 10nm thick $\textrm{CoSi}_{2}$ and rapidly thermal-annealed(RTA) to form Co-polycide electrodes. Then, MOS capacitors were fabricated by doping poly-Si using SADS method. The C-V and leakage-current characteristics of the capacitors depending upon the RTA conditions were measured to study the effects of thermal stability of $\textrm{CoSi}_{2}$ and dopant redistribution on electrical properties of Co -polycide gates. Capacitors RTAed at $700^{\circ}C$ for 60-80 sec., showed excellent C-V and leakage-current characteristics due to degenate doping of poly-Si layers. But for longer time or at higher temperature, their electrical properties were degraeded due to $\textrm{CoSi}_{2}$ decomposition and subsequent Co diffusion. When making Co-polycide gate electrodes by SADS, not only degenerate doping of poly-Si layer. but also suppression of have been shown to be very critical.
정연실,배규식,Jeong, Yeon-Sil,Bae, Gyu-Sik 한국재료학회 2001 한국재료학회지 Vol.11 No.9
$SiO_2$ and polycrystalline Si layers were sequentially grown on (100) Si. NiSi was formed on this substrate from a 20nm Ni layer or a 20nm Ni/5nm Ti bilayer by rapid thermal annealing (RTA) at $300~500^{\circ}C$ to compare thermal stability. In addition, MOS capacitors were fabricated by depositing a 20nm Ni layer on the Poly-Si/$SiO_2$substrate, RTA at $400^{\circ}C$ to form NiSi, $BF_2$ or As implantation and finally drive- in annealing at $500~800^{\circ}C$ to evaluate electrical characteristics. When annealed at $400^{\circ}C$, NiSi made from both a Ni monolayer and a Ni/Ti bilayer showed excellent thermal stability. But NiSi made from a Ni/Ti bilayer was thermally unstable at $500^{\circ}C$. This was attributed to the formation of insignificantly small amount of NiSi due to suppressed Ni diffusion through the Ti layer. PMOS and NMOS capacitors made by using a Ni monolayer and the SADS(silicide as a dopant source) method showed good C-V characteristics, when drive-in annealed at $500^{\circ}C$ for 20sec., and$ 600^{\circ}C$ for 80sec. respectively.
정연실,장은영 한국중국언어학회 2015 중국언어연구 Vol.0 No.60
In this paper, we focused on the existing teaching methods are limited to improve the learning interest and efficiency, researched the PBL teaching mode in order to solve these problems. Based on the understanding of PBL, examined whether the application of PBL in foreign language teaching especially in Chinese language teaching is possible or not. Then specifically suggested several PBL problems. The following is the general contents of this paper. First, PBL is a new teaching mode, it takes students as the center, in order to elaborate the subjective initiative of student in learning, develop the creative thinking ability of student. Second, through the existing research, we can find that PBL has been used in all kinds of educational courses. Third, through the study of PBL in the second foreign language teaching, we can confirm that in the Chinese teaching, we also can use PBL. Fourth, through the comparison of the traditional problems and PBL problems, we can know the characteristics and design process of the PBL problem and the component elements. Fifth, proposed the learning goals in the teaching of Chinese using of PBL. Finally, turned the traditional problem used in Chinese courses into a PBL problem, at the same time, suggested the current assignment, the subject can be used, limitation of the problems and learning goals.
정연실 한국중국언어학회 2014 중국언어연구 Vol.0 No.52
論文以《隸辨》(卷第六)爲硏究對象分析타的體例,闡述타的价値。體例可分爲如下: 1)標題偏旁 2)某字闕 3)讀音與后起字 4)小篆與隸書的字形比較 5)隸書偏旁的演變 6)異體偏旁 7)偏旁的代替現象 8)其他朮語。价値可歸納爲如下:1)提高《隸辨》的應用价値 2)提供有關偏旁的相關資料 3)提供豊富的偏旁代替資料。