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용액공정으로 제작한 PVP-IZO TFT의 UV-O<sub>3</sub> 처리를 통한 전기적 특성 향상 연구
김유정,정준교,박정현,정병준,이가원,Kim, Yu Jung,Jeong, Jun Kyo,Park, Jung Hyun,Jung, Byung Jun,Lee, Ga Won 한국반도체디스플레이기술학회 2017 반도체디스플레이기술학회지 Vol.16 No.2
In this paper, solution based Indium Zinc Oxide thin film transistors (IZO TFTs) were fabricated with PVP gate dielectric. To enhance the electrical properties, UV-O3 treatment is proposed on solution based IZO TFTs. The gate leakage current and interface trap density is compatible with conventional ZnO-based TFT with inorganic gate insulator. Especially, the UV-treated device shows improved electrical characteristics compared to the untreated device. These results can be explained by X-ray photoelectron spectroscopy (XPS) analysis, which shows that the oxygen vacancy of UV-O3 treatment is higher than that of no treatment.