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정규원,안계운,Jeong, Kyu-Won,Ahn, Kye-Un 한국생산제조학회 2010 한국생산제조학회지 Vol.26 No.1
Automotive industry is a major business area in this country and it becomes more and more important. In order to maintain high quality of vehicles, every parts should be inspected. Among them the inspection job of the knuckle bracket holes of the outer tube of shock-absorber has been done manually until now. So, it takes long time and every product can not be inspected. An automatized inspection system was proposed utilizing machine vision technology, which was composed of a slit beam laser, CCD camera, image processing computer, special jig and illuminating back lights. An algorithm which could process images of the laser and bracket holes, then gave the position, radius, roundness of the holes, was developed. This system was applied for the good and no good products and the performance was confirmed.
Ru/$RuO_2$ 금속/산화물 이중전극 위에 증착한 PZT 박막의 전기적 특성
정규원,박영,송준태,Jeong, Kyu-Won,Park, Young,Song, Joon-Tae 한국전기전자재료학회 2001 전기전자재료학회논문지 Vol.14 No.4
PZT thin films (3500$\AA$) have been prepard on the Ru/Ru $O_2$ and Ru $O_2$ bottom electrodes with a RF magnetron sputtering system using P $b_{1.05}$(Z $r_{0.52}$, $Ti_{0.48}$) $O_3$ ceramic target. Ru/Ru $O_2$ bottom electrode was fabricated by in-situ processing controlled the $O_2$ partial pressure. The PZT thin films deposited on the Ru/Ru $O_2$ bottom electrode were preferred oriented (101) plane. The PZT thin films deposited on the Ru/Ru $O_2$ bottom electrodes showed better electrical properties than those with Ru $O_2$ bottom electrodes because Ru $O_2$ prevented oxygen vacancies and impurities from existing withing the interface and substrate.e.
유리기판위에 증착한 50% Pb-excess PZT박막의 전기적특성
정규원,박영,주필연,박기엽,송준태,Jeong, Kyu-Won,Park, Young,Ju, Pil-Yeon,Park, Ki-Yup,Song, Joon-Tae 한국전기전자재료학회 2001 전기전자재료학회논문지 Vol.14 No.5
PZT thin films (3500${\AA}$) ahve been prepared onto Pt/Ti/corning glass (1737) substrates with a RF magnetron sputtering system using Pb$\sub$1.50/(Zr$\sub$0.52/,Ti$\sub$0.48)O$_3$ ceramic target. We used two-step annealing techniques, PZT thin films were grown at a 300$^{\circ}C$ substrate temperature and then subjected to an RTA treatment. In case of 500$^{\circ}C$ RTA temperature show pyrochlore phase. The formation of Perovskite phase started above 600$^{\circ}C$ and PZT thin films generated (101) preferred orientation. As the RTA time and temperature increased, crystallization of PZT films were enhanced. The PZT capacitors fabricated at 650$^{\circ}C$ for 10 minutes RTA treatment showed remanent polarization 30 ${\mu}$C/$\textrm{cm}^2$, saturation polarization 42${\mu}$C/$\textrm{cm}^2$, coercive field 110kV/cm, leakage current density 2.83x10$\^$-7/A/$\textrm{cm}^2$, remanent polarization were decreased by 30% after 10$\^$9/ cycles.