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정휘석,전홍빈,전익성,유현우,안동국,윤동호 대한약리학회 2009 The Korean Journal of Physiology & Pharmacology Vol.13 No.5
Nitric oxide (NO), a diffusible gas, is produced in the central nervous system, including the spinal cord dorsal horn and the trigeminal nucleus, the first central areas processing nociceptive information from periphery. In the spinal cord, it has been demonstrated that NO acts as pronociceptive or antinociceptive mediators, apparently in a concentration-dependent manner. However, the central role of NO in the trigeminal nucleus remains uncertain in support of processing the orofacial nociception. Thus, we here investigated the central role of NO in formalin (3%)-induced orofacial pain in rats by administering membrane-permeable or -impermeable inhibitors, relating to the NO signaling pathways, into intracisternal space. The intracisternal pretreatments with the NO synthase inhibitor L-NAME, the NO-sensitive guanylate cyclase inhibitor ODQ, and the protein kinase C inhibitor GF109203X, all of which are permeable to the cell membrane, significantly reduced the formalin- induced pain, whereas the membrane-impermeable NO scavenger PTIO significantly enhanced it, compared to vehicle controls. These data suggest that an overall effect of NO production in the trigeminal nucleus is pronociceptive, but NO extracellularly diffused out of its producing neurons would have an antinociceptive action.
SiH₂CL₂를 이용한 RPCVD a-Si:H(:CL)의 전지적인 특성과 박막트렌지스터에의 응용
張震,全泓彬,邊宰成,朴敏,李景夏 慶熙大學校 레이저 工學硏究所 1994 레이저공학 Vol.5 No.-
It is the most important to suppress the Staebler-Wronski effect in a-Si:H film in order to produce stable, high performance a-Si:H solar cells and TFTs. Recently, a-Si:H(:CI) films have been prepared by various deposition methods using SiH₂CI₂mixture gases to improve the film quality and the stability. In the present work, hydrogenated amorphous silicon (a-Si:H) films were prepared by remote plasmachemical vapor deposition (RPCVD) using SiH₄/SiH₂CI₂mixtures. The defect density and Urbach energy of a-Si:H(:CI) were found to be little affected by a small addition of SiH₂CI₂in SiH₄. And the small addition of H₂in SiH₂CI₂/SiH₄mixture improves the film quality. We deposited the a-Si:H(:CI) films with 6 at.% of hydrogen content and with 3×10??㎝??³defedt density which exhibited very small photoconductivity decay under AM-1 illumination. We have fabrecated the inverse staggered a-Si:H TFT using a-Si:H(:CI) film deposited at 220℃.