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실리콘배향에 따른 산화 속도 영향과 표면 Morphology
전법주,오인환,임태훈,정일현 ( Bup Ju Jeon,In Hwan Oh,Tae Hoon Lim,Il Hyun Jung ) 한국공업화학회 1997 공업화학 Vol.8 No.3
ECR 산소 플라즈마를 사용한 건식산화법에 의해 두 가지 실리콘 배향에 대하여 실리콘 산화막을 제조한 후 Deal-Grove(D-G)모델과 Wolters-Zegers-van Duynhoven (W-Z)모델에 적용하여 시간에 따르는 막 두께의 변화를 살펴보았으며 산화속도와 산화막의 표면 morphology의 상관관계를 조사하였다. 실리콘 산화막의 두께는 Si(100)과 Si(111) 모두 반응 시간이 짧은 영역에서 선형적으로 증가하였으나 반응시간이 경과함에 따라 화학반응 속도 보다 산화막을 통과하는 반응성 라디칼들의 확산이 율속단계로 작용하여 산화속도의 증가폭이 다소 둔화되었다. D-G모델과 W-Z모델에서 확산 및 반응속도는 Si(100)보다 Si(111)이 더 큰 값을 갖기 때문에 반응속도는 1.13배 더 크게 나타났으며 이들 모델은 실험 값과 잘 일치하였다. 표면 morphology는 산화 속도가 증가해도 식각현상이 일어나지 않는 실험 조건에서 산화막의 표면 조도가 일정하였으며, 기판의 위치가 하단 전자석에 근접하고 마이크로파 출력이 증가하여 식각현상이 일어나는 실험 조건에서 표면 조도는 산화속도와 관계없이 크게 나타났다. The SiO₂ films were prepared by ECR(electron cyclotron resonance) plasma diffusion method, Deal-Grove model and Wolters-Zegers-van Duynhoven model were used to estimate the oxidation rate which was correlated with surface morphology for different orientation of Si(100) and Si(111). It was seen the SiO₂ thickness increased linearly with initial oxidation time. But oxidation rate slightly decrease with oxidation time. It was also shown that the oxidation process was controlled by the diffusion of the reactive species through the oxide layer rather than by the reaction rate at the oxide interface. The similar time dependency has been observed for thermal and plasma oxidation of silicon. From D-G model and W-Z model, the oxidation rate of Si(111) was 1.13 times greater than Si(100) because Si(111) had higher diffusion and reaction rate, these models more closely fits the experimental data. The SiO₂ surface roughness was found to be uniform at experimental conditions without etching although oxidation rate was increased, and to be nonuniform due to etching at experimental condition with higher microwave power and closer substrate distance.
경피적 관상동맥 확장 성형술 도중 우관상동맥 뒤가쪽가지에서 발생한 유도철사 부러짐
김학로 ( Hak Ro Kim ),임태훈 ( Tae Hoon Yim ),김병철 ( Byung Chul Kim ),이호준 ( Ho Jun Lee ),오홍근 ( Hong Geun Oh ),주현식 ( Hyun Sik Ju ),김태진 ( Tae Jin Kim ),김용복 ( Young Bok Kim ) 영남대학교 의과대학 2016 Yeungnam University Journal of Medicine Vol.33 No.1
Guide wire fracture during percutaneous coronary intervention (PCI) is rare. It can cause fatal complications such as thrombus formation, embolization, and perforation. Guide wire fracture could occur during intervention for severely calcified stenotic lesions, and rarely from distal small branches of stenotic lesions. There are several methods for its management depending on the material character, position, length of the remnant, and the patient’s condition. If percutaneous retrieval was not achieved, the surgical procedure should be considered for prevention of potential risks, although the remnant guide wire does not usually cause complications. We experienced a patient with a guide wire fracture during PCI, and managed to prevent its complications through surgical removal of the remnant wire. We report this case here.