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A Study on Pit Fire and Digital Print
이태흥 한국디자인트렌드학회 2008 한국디자인포럼 Vol.18 No.-
This study started from the idea of the application of pit firing (the most fundamental and original firing method) combined with modern technology - the use of the latest computer software in an attempt to create a variety of new possibilities. These attempts add huge potential to modern ceramic works. In ceramics, there have been many firing techniques and pit firing has the longest history amongst them. The origin and history of ceramics go back to humanities origins, generally presumed to be 13,000 ~15,000 years ago. Pit firing techniques are challenging to modern ceramic artists and also have historical and symbolic importance. Modern ceramic artists have continued to produce works using this most ancient of techniques whilst at the same time expressing modern themes and introducing new possibilities. The reason modern fine art and modern ceramic artists have continued to use this firing method is precisely because the finished product can still express the primitive and random elements caused by fire heat and smoke on the surface. The process is also open for use at any skill level whether beginner or seasoned and skilled artisan. This study describes attempted applications of the pit fire technique in combination with images made by software programs onto ceramic works. The results are a hybrid between an historically most fundamental traditional firing technique and high technology. This study contends that the resultant combination of the above mentioned techniques can be utilized by artists aspirationally to reflect modern society and advancing trends both artistically and technologically without sacrificing successful and culturally significant methods from the past. It could be used and applied in purely artistic endeavors such as one off commissioned art pieces and also in mass production of ceramic consumer goods such as tiles. Korea has its own long history of ceramic artistry which is valued over the world. The world has and is changing rapidly and Korea has also adopted modern technology and is now a leader in the IT field. This study has import at this historical juncture as it proposes a partnership between the history (traditions) and future (technological innovation) of this particular nation.
초고진공 전자 사이클로트론 화학 기상 증착 장치에 의한 저온 실리콘 에피 성장에 기판 DC 바이어스가 미치는 영향
태흥식(Heung-Sik Tae),황석희(Seok-Hee Hwang),박상준(Sang-June Park),윤의준(Euijoon Joon),황기웅(Ki-Woong Whang),송세안(Se Ahn Song) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.4
Langmuir probe를 사용하여 UHV-ECRCVD 장치에서 기판에 가해진 DC 바이어스에 따른 플라즈마내의 공간적 전위 분포를 측정하였다. 양의 바이어스를 기판에 가하는 경우 플라즈마내의 공간적 전위 분포는 B-field를 따라 cavity로부터 기판으로 down-stream되는 이온의 flux 및 에너지를 감소시키는 오르막의 전위 분포를 갖게 되며 음의 바이어스를 가하는 경우는 down-stream되는 이온의 flux 및 에너지를 증가시키는 내리막의 전위 분포를 갖게 된다. DC 바이어스가 저온 실리콘 에피탁시(560℃ 이하)에 미치는 영향을 in situ reflection high energy electron diffraction(RHEED), cross-section transmission electron microscopy(XTEM), plan-view TEM 및 high resolution TEM(HRTEM)으로 고찰하였다. 음의 바이어스를 가한 기판에는 다결정 실리콘이 성장되고 양의 바이어스를 가한 기판에는 단결정 실리콘이 성장되며 다결정 실리콘의 성장 속도보다 단결정 실리콘의 성장속도가 낮은 것으로 관찰되었다. 플라즈마 증착 중 DC 바이어스에 의한 이온 에너지의 조절은 UHV-ECRCVD에 의한 저온 실리콘 에피탁시에 있어서 중요한 역할을 한다. The spatial potential distribution of electron cyclotron resonance plasma is measured as a function of the substrate DC bias by Langmuir probe method. It is observed that the substrate DC bias changes the slope of the plasma potential near the substrate, resulting in changes in flux and energy of the impinging ions across plasma/substrate boundary along the magnetic field. The effect of the substrate DC bias on the low-temperature silicon homoepitaxy (below 560℃) is examined by in situ reflection high energy electron diffraction (RHEED), cross-section transmission electron microscopy (XTEM), plan-view TEM and high resolution transmission electron microscopy (HRTEM). While the polycrystalline silicon layers are grown with negative substrate biases, the single crystalline silicon layers are grown with positive subatrate biases. As the substrate bias changes from negative to positive values, the growth rate decreases. It is concluded that the control of the ion energy during plasma deposition is very important in silicon epitaxy at low temperatures below 560℃ by UHV-ECRCVD.