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이은송이 ( Eunsongyi Lee ),이준민 ( Jun Min Lee ),전계진 ( Kye Jin Jeon ),이우영 ( Woo Young Lee ) 대한금속재료학회 ( 구 대한금속학회 ) 2009 대한금속·재료학회지 Vol.47 No.6
We report on hysteresis behavior in the electrical resistance-hydrogen concentration of Pd thin films. The variation of the electrical resistance has been investigated during the process of absorption and desorption of hydrogen gas (H2) as a function of thickness of Pd thin films. The hysteresis behavior in the electrical resistance with H2 concentration was found for Pd thin films and consists of α phase, α+β phase, and β phase regions. The sensitivity of Pd thin films with H2 concentration was found to follow Sieverts` law in the α phase region. However, the sensitivity was observed to increase abruptly with H2 concentration in the α+β phase co-exist region. This is because Pd-H interaction is stronger in the β phase than in the α phase and needs a higher concentration gradient as a driving force to desorb. The formation of the β phase also was observed to cause the structural change because of the lattice expansion during absorption. The hysteresis height and the trace of structural change were affected by the thickness of the Pd film. As the film becomes thinner, the hysteresis height becomes lower and the amount of delamination on the surface becomes smaller. For films thinner than 20 nm in thickness, the delamination was not found but electrical resistance hysteresis was still observed. (Received December 22, 2008)
권민지,이은송이,Ahrum Sohn,El Mostafa Bourim,김동욱 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.57 No.6
We investigated the resistive switching behaviors of metal/oxide junctions consisting of Pt electrodes and Nb-doped SrTiO3(001) single crystals. The doping level affected the resistive switching ratio and the transport mechanism (thermionic emission for low doping and thermionic field emission for high doping). Pulse-mode switching experiments showed that an increase in the interface electric field by several times could enhance the switching speed by hundreds of times. The dependence of the retention time on the doping ratio was also examined. All the results suggested that ionic migration and carrier trapping could explain the resistive switching characteristics.
Fabrication of a Hydrogen Sensor using Palladium-coated Silver Dendrites Formed Electrochemically
이신복,이호영,이은송이,이우영,주영창 대한금속·재료학회 2010 METALS AND MATERIALS International Vol.16 No.5
Here, we report a cost-effective method for making palladium-coated silver (Ag) dendrites for hydrogen sensing. Ag dendrites, 50-150 nm in diameter, are made through electrochemical migration in a micro-electrochemical cell. They are then coated with a 200-nm-thick palladium (Pd) thin film. The hydrogen sensor made of palladium-coated Ag dendrites showed better hydrogen sensing characteristics than ones made of a pure Pd film. This is due to the large surface area of the Ag dendrites. Heat-treatment made the hydrogen sensing curve more stable, which is attributable to an alloying effect between Pd and Ag.
Yunae Cho,이은송이,김동욱,SeJin Ahn,Guk Yeong Jeong,곽지혜,JaeHo Yun,Hogyoung Kim 한국물리학회 2013 Current Applied Physics Vol.13 No.1
We investigated the transport and photovoltaic properties of Cu(In1-xGax)Se2 (CIGS) thin-film solar cells. The shunt-current-eliminated diode current could be obtained from the currentevoltage characteristics by subtracting the parasitic shunt leakage current from the total current. The temperature dependence of the open-circuit voltage, extracted from the shunt-eliminated (total) current, suggested that the recombination activation energy is comparable to (much less than) the CIGS bandgap. The lowtemperature characteristics of the diode ideality factor supported bulk-dominated recombination in the same cell. This suggests that shunt-current subtraction can provide the proper diode parameters of CIGS solar cells.