홈쇼핑과 연계편성된 건강다큐 연구 : 종편 채널 건강다큐를 중심으로

이순일(Soonil Lee) 한국언론정보학회 2021 한국언론정보학보 Vol.109 No.-

이 연구는 홈쇼핑과의 연계편성된 방송들이 만연해져 ‘TV의 장터화(상업화)’ 현상이 벌어지고 있는 상황에서 몇 년간 연계편성 실태 조사에 머물러온 문제점을 지적하고 건강다큐의 내용 분석에 집중하여 방송사는 달라도 홈쇼핑과의 연계편성으로 인해 건강 협찬방송들이 구조적으로 동일함을 파악하고자 하였다. 이를 위해 주말 오전에 집중 편성된 종편사 건강다큐들을 분석했으며 획일적으로 동질화된 건강다큐의 양산이 궁극적으로 시청자 권익을 어떤 식으로 훼손시키고 있는지를 탐색하고자 하였다. 구체적으로 각 종편 다큐가 동일한 협찬 아이템을 반복적으로 소개함으로써 거시적으로는 종편 채널에 대한 시청자의 채널선택권을 빼앗고, 내용적인 측면에서는 동일한 서사 구조와 동일한 연구결과의 사용이 획일적인 콘텐츠 생산을 낳아 시청자의 콘텐츠 향유권을 훼손시켰다. 마지막으로 건강과 생명을 다루는 방송임에도 협찬품 홍보 중심의 전략이 건강 정보의 은폐, 축소 가능성을 야기하며 시청자의 정보접근권을 침해했다. 결국, 종편 건강다큐가 상품 판매의 전초 기지가 되어 방송사의 수익을 축적해 가는 동안, 다른 한편에서는 시청자의 권익 훼손이라는 상반된 결과를 만들어내고 있다. In the current situation where TV shows synchronously scheduled with home shopping channels are predominant and it thus incurs ‘TV to be a marketplace,’ this research aims to point out problems that surveys on synchronous schedule have remained only factual for years; focus on analyzing contents of health documentaries and; clarify that health issue-sponsored programs are structurally identical due to synchronous schedule with home shopping programs despite different broadcasting companies. To this end, this research is to analyze health documentaries on general programming TV channels which are concentrated on weekend mornings and to explore how viewers rights are ultimately undermined due to mass production of uniformly homogenized health documentaries. Specifically each documentary on general programming TV channels has repeatedly used the same sponsored item, which consequently deprives viewers of rights to choose one among diverse general programming TV channels. In terms of contents, the narrative structure and research results have been identically applied, which brings about production of uniformed contents and thus viewers rights to enjoy different contents are undermined as well. Lastly, a strategy to focus on promoting sponsored items causes possibility of hiding and underestimating values of health information, which violates viewers rights of access to information.

초소형 질량분석기를 위한 삼극관 구조의 탄소나노튜브 전자방출원

이유리(Yuri Lee),이기정(Ki Jung Lee),Nguyen Tuan Hong,이순일(Soonil Lee),양상식(Sang Sik Yang) 대한전기학회 2012 전기학회논문지 Vol.61 No.7

This paper presents a carbon nanotube (CNT) triode-structure field emitter as an ion source in a micro time-of-flight mass spectrometer(TOF-MS). In the ion source by field emission, the electrons emitted from cathodes under an electric field accelerated to the anode and ionize gas molecules by impact before arriving the anode. The generated positive ions are to be accelerated to the ion collector. Whereas most of ions are drawn to the cathodes in diode field emitters, a grid in the triode field emitter prevents the ions from being drawn to the cathodes. The triode field emitter is fabricated by micromachining. The cathode is composed of six CNT cylinders. The total size of the fabricated device is 8.0 × 7.3 × 1.9 ㎣. The anode and the grid current of the fabricated CNT field emitter were measured for various anode and grid voltages. When the anode and the grid voltages are 1000 V and 990 V, respectively, the emission current passing through the ionization region is 8.6 ㎂, which is a sufficient emission current for ionization and mass spectrometry.

분광 타원해석법에 의한 SIMOX 층구조 분석

이창희(Chang Hee Lee),이순일(Soonil Lee) 한국진공학회(ASCT) 1995 Applied Science and Convergence Technology Vol.4 No.4

200 keV의 에너지로 산소 이온들을 주입한 후 열처리하여 만든 SIMOX의 층구조를 분광 타원해석법을 이용하여 비파괴적으로 분석하여, 약 300 Å 의 계면층과 800 Å의 매몰산화층이 3360 Å 정도의 결정성 실리콘층 아래에 존재하는 것을 알 수 있었다. 이러한 매몰산화층의 분포와 TRIM 전산시늉 결과의 비교로부터 매몰산화층의 형성은 산소 이온들이 열처리에 따라 이온 주입시 실리콘의 비정질화가 최대인 곳 주변으로 이동하여 이루어짐을 알 수 있었다. 또한 측정 위치에 따른 분광 타원해석 상수들의 변화로부터 이온주입시의 이온빔의 형태와 주사 방향의 영향으로 생긴 SIMOX 층구조의 비균일성을 알 수 있었다. SIMOX structures which are formed by oxygen-ion implantation at an energy of 200 keV and subsequent annealing are analyzed using the nondestructive spectroscopic ellipsometry. The SIMOX wafer is found to have about 800 Å thick buried oxide layer and 300 Å thick interface layer below about 3360 Å thick c-Si layer. Based on the comparison of the depth profile of the SIMOX wafer with the result of TRIM'92 simulation, we conclude that the buried odixe layer is formed as the implanted oxygen ions are concentrated in the vicinity of the maximum damage density region during annealing. Finally, we conclude that the observed inhomogeneity of the SIOMX structures depends on the beam prome and the beam scan direction during implantation.

열간 압축 방법으로 제작된 Bi_2-xSb_xTe₃ 열전소재 복합체에서 Sb 함량이 전하수송과 출력인자에 미치는 효과

임영수 ( Young Soo Lim ),이순일 ( Soonil Lee ) 대한금속재료학회(구 대한금속학회) 2017 대한금속·재료학회지 Vol.55 No.9

Abstract: We report the effects of Sb content on the charge transport and power factor of Bi_2-xSb_xTe₃(1.56 ≤ □ ≤ 1.74) compounds prepared by hot pressing. From the temperature-dependence of the electrical conductivity, it was found that the charge transport in the compounds was predominantly governed by acoustic phonon scattering, and additionally affected by ionized impurity scattering. Hole concentration increased with increasing Sb content due to the generation of antisite defects, and its process-dependence is discussed in comparison with our previous work. The room-temperature mobility of the compound gradually decreased with increasing Sb content due to the intensification of ionized impurity scattering by the antisite defects, however, the effect of grain boundary scattering on the mobility could not be observed. The Seebeck coefficient decreased with the increase in Sb content, and this effect was interpreted in terms of the carrier concentration and the density-of-state (DOS) effective mass. The DOS effective mass was estimated by Pisaernko relation, and it increased from 0.75 (□ = 1.56) to 0.97 (□ = 1.74) with increasing Sb content due to the non-parabolicity in the valence band of Bi_2-xSb_xTe₃. Based on these results, the effects of Sb content on the power factor were discussed, and the highest power factor of 37.2 × 10^-4 Wm^-1K^-2 was obtained in the Bi_0.3Sb_1.7Te₃ compound at room temperature. (Received February 16, 2017; Accepted April 16, 2017)

비화학양론적 Bi₁_±_xFeO₃_±_δ와 Ti가 첨가된 BiFeO₃의 소결조건에 따른 결정구조와 미세구조 변화

배지희,김준찬,김명호,이순일,Bae, Jihee,Kim, Jun Chan,Kim, Myong-Ho,Lee, Soonil 한국재료학회 2020 한국재료학회지 Vol.30 No.2

BiFeO₃ with perovskite structure is a well-known material that has both ferroelectric and antiferromagnetic properties called multiferroics. However, leaky electrical properties and difficulty of controlling stoichiometry due to Bi volatility and difficulty of obtaining high relative density due to high dependency on the ceramic process are issues for BiFeO₃ applications. In this work we investigated the sintering behavior of samples with different stoichiometries and sintering conditions. To understand the optimum sintering conditions, nonstoichiometric Bi_1±xFeO_3±δ ceramics and Ti-doped Bi_1.03Fe_1-4x/3Ti_xO₃ ceramics were synthesized by a conventional solid-state route. Dense single phase BiFeO₃ ceramics were successfully fabricated using a two-step sintering and quenching process. The effects of Bi volatility on microstructure were determined by Bi-excess and Ti doping. Bi-excess increased grain size, and Ti doping increased sintering temperature and decreased grain size. It should be noted that Ti-doping suppressed Bi volatility and stabilized the BiFeO₃ phase.

질소 ECR 플라즈마에 노출된 Al 박막의 분광타원해석

허근무(Keun-moo Hur),이순일(Soonil Lee),김상열(Sang Youl Kim),오수기(Soo-ghee Oh) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.1

Si 기판 위에 증착된 Al 박막을 질소 ECR 플라즈마에 노출시켜 시료를 제작하고 분광 타원해석법으로 분석한 결과 Al박막에 질화층이 형성되었음을 확인하였다. 사용한 질소 ECR 플라즈마의 전자온도와 전자밀도는 챔버내의 위치에 따라 각각 10~20 eV, 0.9~1.2×10¹¹/㎤의 값을 보였다. 질소 ECR 플라즈마에 노출된 기판은 급격한 온도상승을 보였으며 노출시킨 뒤 5~6분이 지나면 500℃ 근처에서 포화상태를 이루었다. 분광타원해석상수인 Δ와 Ψ를 분석한 결과 증착된 Al의 두께는 시료에 따라 140~160Å이었고 표면에 형성된 AlN 층의 두께는 질소 ECR 플라즈마에 노출된 시간이 길수록 그리고 시료의 위치가 공명지점에 가까울수록 증가하였다. AlN층의 두께가 노출시간의 제곱근에 비례하는 것으로부터 AlN층은 Al의 표면에 흡착된 질소가 Al속으로 확산하여 이루어진 것으로 설명하였다. Al film deposited by thermal evaporation on a Si substrate is exposed to a nitrogen ECR plasma. We use the nitogen ECR plasma which has electron temperatures and electron densities of 10~20 eV and 0.9~1.2×10¹¹/㎤, respectively. When exposed to the nitrogen plasma, the sample temperature rises rapidly and reaches saturation value of about 500℃ after 5~6 min. of exposure time. Spectroscopic Ellisometry (SE) reveals AlN film formation. The analysis of the SE constants Δ and Ψ shows that the thickness of the deposited Al film varies between 140~160 Å. AlN thickness increases when exposed longer to the nitrogen ECR plasma at fixed sample position or when positioned closer to the cyclotron resonance region at fixed exposure time. AlN thickness increase is linear to the square root of the exposure time, which suggests that the AlN formation is due to the diffusion of adsorbed nitrogen into the deposited Al film.

열처리 조건에 따른 이온주입된 실리콘의 재결정화

이창희(Chang Hee Lee),이순일(Soonil Lee) 한국진공학회(ASCT) 1995 Applied Science and Convergence Technology Vol.4 No.4

이온주입된 실리콘 시료들의 열처리 조건에 따른 재결정화를 분광 타원해석법(Spectroscopic El-lipsometry, SE)을 사용하여 연구하였다. 열처리 후에도 잔류하는 결함들의 양과 분포를 구하기 위한 시료의 층구조 분석에 있어서 손상층의 유효굴절율은 Bruggeman 유효매질이론을 이용하여 구하였으며 기준 비정질실리콘 데이타로서는 완화된 비정질실리콘의 광학상수와 이온주입에 의해서 만들어진 비정질 실리콘의 광학상수를 함께 사용하였다. 조사된 대부분의 열처리 조건하에서 고체상 적층성장(solid-phase epitaxial growth) 과정에 따라 비정질층이 재결정화되는 것이 관측되었다. Thermal annealing condition dependence of ion-implanted silicon recrystallization is studied using spectroscopic ellipsometry. In depth profiling the annneled silicon to determine the residual damage, we used both the relaxed amorphous silicon reference data and implanted amorphous reference data with the Bruggeman effective medium theory. All the samples that we studied were found to recrystallize due to the solid-phase epitaxial growth under our annealing conditons.

습식공정으로 형성된 구리산화물 나노와이어의 전계방출특성 향상

섬우용(Woo-Yong Sung),김왈준(Wal-Jun Kim),이승민(Seung-Min Lee),이호영(Ho-Young Lee),박경호(Kyung-Ho Park),이순일(Soonil Lee),김용협(Yong-Hyup Kim) 한국표면공학회 2004 한국표면공학회지 Vol.37 No.6

Vertically-aligned and uniformly-distributed CuO nanowires were formed on copper-coated Si substrates by wet chemical process, immersing them in a hot alkaline solution. The effects of hydrogen plasma treatment on the field emission characteristics of CuO nanowires were investigated. It was found that hydrogen plasma treatment enhanced the field emission properties of CuO nanowires by showing a decrease in turn-on voltage, and an increase in emission current density, and stability of current-voltage curves. However, the excessive hydrogen plasma treatment made the I-V curves unstable. It was confirmed by XPS (X-ray Photoelectron Spectroscopy) analysis that hydrogen plasma treatment deoxidized CuO nanowires, thereby the work function of the nanowires decreased from 4.35 eV (CuO) to 4.1 eV (Cu). It is thought that the decrease in the work function enhanced the field emission characteristics. It is well-known that the lower the work function, the better the field emission characteristics. The results suggest that the hydrogen plasma treatment is very effective in achieving enhanced field emission properties of the CuO nanowires, and there may exist an optimal hydrogen plasma treatment condition.