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Formation of ZnO Nanosheets by Oxidizing Zn Film
윤종환 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.1
In this work, we report a simple method for fabricating nanostructured ZnO by directly exposing thin Zn film to an atomic oxygen plasma produced by plasma-enhanced chemical vapor deposition (PECVD). Thin Zn films (∼500-nm thickness) were exposed to an atomic oxygen plasma at 380 ℃ for 30 min, and well-defined ZnO nanosheets of about 5 nm thickness are shown to be produced, forming a nanoflower-like structure as analyzed by using field-emission electron microscopy (FESEM). The nanosheets were characterized by using transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS), X-ray diffraction spectroscopy (XRD), and photoluminescence (PL) measurements. The resulting nanosheets exhibited wurtzite hexagonal structures grown along the [10-10] direction and emitted both ultraviolet and green light centered near 380 nm and 540 nm, respectively. A possible explanation is discussed.
Memory Properties of Al-based Nanoparticle Floating Gate for Nonvolatile Memory Applications
윤종환 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.61 No.5
In this work, a simple method for fabricating an Al-based nanoparticle (NP) floating gate is demonstrated and shown to produce floating gates suitable for nonvolatile memory applications. The Al-based NP floating gate was fabricated by thermally annealing a simple sandwich structure comprised of a thin Al film sandwiched between two silicon-oxide layers. The memory properties of the NPs for possible nonvolatile memory applications were investigated by using capacitance-voltage measurements on metal-oxide semiconductor capacitors. The capacitor was found to exhibit a large memory window of more than 10.4 V and a storage charge density of 4.4 × 10<sup>12</sup> cm<sup>−2</sup> suitable for nonvolatile memory applications.
다층 실리콘 나노결정의 광발광에 대한 이산화 실리콘 층의 효과
윤종환 한국물리학회 2013 새물리 Vol.63 No.11
In this work, we have investigated the light emission characteristics of multilayered silicon nanocrystals produced by thermally annealing SiO2/SiO1.5/SiO2 multilayered structures grown by using plasma-enhanced chemical vapor deposition (PECVD). The light emission intensity was shown to strongly depend on the SiO2 layer’s thickness. The emission intensity of the multilayered Si nanocrystals prepared by using a 3.5-nm-thick SiO2 layer was found to be higher by a factor 20 than that of a single-layer sample of SiO1.5 without the SiO2 layer. The results are likely attributed to a limitation on the Si diffusion due to the two SiO2 layers. 본 연구에서는 플라즈마 화학기상 증착 (PECVD)에 의해 제조된 SiO2/SiO1.5/SiO2 구조의 다층 박막을 열처리하여 형성된다층 Si 나노 결정의 발광 특성을 연구하였다. 발광 세기는 SiO2 층의두께에 강한 의존성을 갖고 있음을 관측하였으며, 두께 3.5 nm의SiO2를 갖는 다층 박막으로부터 얻는 Si 나노 결정의 발광 세기는SiO1.5 단일층에 의한 Si 나노결정의 발광 세기에 비해 약 20배의높은 발광 특성을 나타내었다. 이러한 결과는 두 SiO2 층에 의한 Si 원자의 확산 제한에 기인한 것으로 이해된다.