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尹炳午,李世寧,河永昊,孫永珪 慶北大學校 醫科大學 1970 慶北醫大誌 Vol.11 No.1
In order to enhance the therapeutic effects on clonorchiasis, hexachlorophene was combined with others; dithiazanine iodide (Delmit), gentiana violet, and 1.4-bis (trichloromethyl) benzene (Hetol), and their effects were observed on rabbits infected with clonorchis sinensis. The results were as follows. 1) The effects of hexachlorophene combined with gentina violet or dithiazanine iodide were decreased than of hexachlorophene alone. 2). The effect of hexachlorophene combined with 1.4-bis (trichloromethyl) benzene was enhanced than that of hexachlorophene alone.
윤병오,유종근,장병건,박종태,Yun, Byung-Oh,Yu, Jong-Gun,Jang, Byong-Kun,Park, Jong-Tae 대한전자공학회 1999 電子工學會論文誌, D Vol.d36 No.7
In this paper, hot carrier induced performance degradation of peripheral circuits in memory devices such as static type imput buffer, latch type imput buffer and sense amplifier circuit has been measured and analyzed. The used design and fabrication of the peripheral circuits were $0.8 {\mu}m$ standard CMOS process. The analysis method is to find out which device is most significantly degraded in test circuits by using spice simulation, and then to characterize the correlation between device and circuit performance degradation. From the result of the performance degradation of static type input buffer, the trip point was increased due to the transconductance degradation of NMOS. In the case of latch type input buffer, there was a time delay due to the transconductance degradation of NMOS device. Finally, hot carrier induced the decrease of half-Vcc voltage and the increased of sensing voltage in sense amplifier circuits have been measured. 본 논문에서는 기억소자 주변회로인 정적 입력버퍼와 동적 입력버퍼 그리고 감지 증폭기 회로에서 hot carrier 효과로 인한 회로성능 저하를 측정 분석하였다, 회로 설계 및 공정은 $0.8 {\mu}m$ 표준 CMOS 공정을 이용하였다. 분석방법은 회로의 성능저하에 가장 큰 영향을 주는 소자를 spice 시뮬레이션으로 예견한 후 소자열화와 회로성능 저하 사이의 상관관계를 구하는 것이다. 정적 입력버퍼의 회로성능 저하 결과로부터 MMOS 소자의 Gm 변화로 인하여 trip point가 증가한 것을 볼 수 있었다. 동적 입력 버퍼에서는 NMOS 소자의 Gm 변화로 인하여 전달지연시간을 볼 수 있었다. 그리고 감지증폭기 회로에서는 hot carrier 효과로 인하여 감지전압의 증가와 half-Vcc 전압의 감소를 확인할 수 있었다.