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大豆를 利用한 요구르트및 乳酸菌 飮料의 製造를 爲하여 豆乳 요구르트에 對한 乳酸菌 生育과 酸生成및 여러가지 添加物에 對한 影響을 調査하였다. 施肥條件에 差異를 두어 栽培한 大豆를 利用한 豆乳에서의 乳酸菌 生育및 酸生成은 큰 差異가 없었으나 開發複肥를 使用한 Soybean D가 多少 良好한 것으로 나타났으며, 豆乳, 脫脂豆乳및 分離 大豆蛋白에서의 酸生成은 豆乳가 脫脂豆乳보다 良好했으며 分離 大豆蛋白으로 調製한 豆乳에서는 顯著히 낮았다. 豆乳 요구르트의 製造에 使用한 菌株別 酸生成 能力은 L. bulagricus와 L. acidophilus가 優秀하였다. 糖과 各種 發育促進物質의 添加에 의해 菌增殖및 酸生成이 促進되었으며 特히 Glucose와 Yeast Extract의 添加는 顯著한 效果를 나타내었다. This experiment was performed to investigate the growth and acid production of lactic acid bacteria in soy yoghurts prepared from soybeans produced using various nitrogen sources and the ability of the bacteria to utilize the available carbohydrates in the medium. Various soybeans did not show significant difference in the growth and acid production of lactic acid bacteria, soybean D with newly developed complex fertilizer being the best. The acid production in soy milk by L acidophilus was better than those in defatted soy milk and in isolated soy protein, that in isolated soy milk being significantly poor. Of lactic acid bacteria tested, L. bulgaricus and L. acidophilus exhibited more population and acid production in soy yoghurts. The population and acid production of lactic acid bacteria was increased by the addition of various carbohydrates, and significantly by glucose and yeast extract.
The result of stripping process for the removal of the post etch/ash Photoresist (PR) residue on an aluminum patterned wafer by using supercritical CO2 (sc-CO2) mixture, was investigated by scanning of electron microscope (SEM) inspection of wafer, measuring the cloud points and visual observation of the state of sc-CO2 mixtures. It was found that sc-CO2 mixtures were made by mixing additives and sc-CO2 should form homogeneous and transparent phase (HTP) in order to effectively and uniformly remove the post etch/ash PR residue on the aluminum patterned wafer using them. The additives were formulated by mixing and co-solvents like an amine compound and fluoro-surfactants used as HTP agents, and the PR residue on the wafer were able to be rapidly and effectively removed using the sc-CO2 mixture of HTP. The five kinds of additives were formulated by the recipe of mixing co-solvents and surfactants, which were able to remove PR residue on the wafer by mixing with sc-CO2 at the stripping temperature range from 40 to 80oC. The five kinds of sc-CO2 mixtures which were named as PR removers were made, which were able to form HTP within the above described stripping temperature. The cloud points of sc-CO2 mixtures were measured to find correlation between them and HTP.
This research propose a vehicle attitude estimation method using sensor fusion of speedometer and six-axis inertial sensor. External acceleration generated in a dynamic environment such as high-speed movement of a vehicle causes a considerable error in the attitude angle measured by the accelerometer. The external acceleration is estimated using velocity data obtained from speedometers mounted on most vehicles. The vehicle velocity is decomposed into three vector components using the angular velocity and attitude angle measured by the inertial sensor in the previous time step. The attitude angle estimated by the speedometer and the accelerometer is used to correct the error of the gyro sensor in the Kalman filter. In order to verify the performance of the proposed algorithm, experiments on a scenario of rapid acceleration/deceleration of a truck in a straight section and a scenario of high-speed driving on a long-distance highway are conducted.
The supercritical CO2 (sc-CO2) mixture and the sc-CO2-based Photoresist(PR) stripping(SCPS) process were applied to the removal of the post etch/ash PR residue on aluminum patterned wafers and the results were observed by scanning of electron microscope(SEM). In the case of MDII wafers, the carbonized PR was able to be effectively removed without pre-stripping by oxygen plasma ashing by using sc-CO2 mixture containing the optimum formulated additives at the proper pressure and temperature, and the same result was also able to be obtained in the case of HDII wafer. It was found that the efficiency of SCPS of ion implanted wafer improved as the temperature of SCPS was high, so a very large amount of MEA in the sc-CO2 mixture could be reduced if the temperature could be increased at condition that a process permits, and the ion implanted photoresist(IIP) on the wafer was able to be removed completely without pre-treatment of plasma ashing by using the only 1 step SCPS process. By using SCPS process, PR polymers formed on sidewalls of metal conductive layers such as aluminum films, titanium and titanium nitride films by dry etching and ashing processes were removed effectively with the minimization of the corrosion of the metal conductive layers.