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후방 경골 건 기능부전 환자의 임상 증상에 운동 치료가 미치는 영향
정태호,오재근,이홍재,양윤준,나경욱,서진수,Jeong, Tae-Ho,Oh, Jae-Kun,Lee, Hong-Jae,Yang, Yoon-Joon,Nha, Kyung-Wook,Suh, Jin-Soo 대한족부족관절학회 2008 대한족부족관절학회지 Vol.12 No.1
Purpose: The isolated exercise therapy and its effect for the treatment of posterior tibial tendon dysfunction (PTTD) is not well known. The purpose of this study was to identify the clinical effect of stretching and strengthening exercise program on the patients' muscle function and range of motion, pain and gait in the management of the early stage PTTD. Materials and Methods: From October 2006 to March 2007, 14 patients with early stage PTTD (stage I or IIa) without surgical intervention were randomly assigned into two groups and we analyzed their clinical results. All patients were female and one who have sprained the same ankle during the program and one who withdrew from the program due to her private reason were excluded. At the last, the exercise group (EG) was seven and the control group (CG) was five. Mann-Whitney U test was used for the comparison of pain, ROM, muscle power, AOFAS score and 5 minute walking test of both groups. Wilcoxon-signed rank test was used for the comparison between the pre and post exercise program in EG. Results: The pain was significantly reduced in EG compare to CG and only the dorsiflexion was significantly increased in EG in the analysis of ROM. The dorsi flexion and plantar flexion power were significantly increased in EG. Conclusion: Our 6 weeks stretching and strengthening exercise program showed noticeably improved clinical result, and therefore it is recommended as one of the useful treatment option in the management of early stage PTTD.
오재근,최기영,송재흥,김영국,채건식,주유환,설정식,손인호,차성극,이상찬 慶南大學校 附設 基礎科學硏究所 1996 硏究論文集 Vol.8 No.-
HClO₄(pH:2) 수용액에서 양극산화 방법으로 HgMnTe(HMT)의 표면에 산화막을 형성 시켰다. 산화막의 두께는 SEM으로 측정하였으며 10㎛였다. 전류-전압 특성곡선을 얻어 산화 피크 전압으로부터 HTeO₂?, TeO?, HHgO₂? 막이 형성되었음을 알 수 있었다. 산화시키지 않은 HMT와 HClO₄수용액에서 산화시킨 HMT에 대해 Hall전압 및 자기저항을 각각 측정하였다. 홀전압과 자기저항은 HMT보다 HMT산화막에서 더 컸으며 이것은 HHgO₂? 공격자가 홀의 역할을 하고, TeO₄? 산화막은 전하의 포획도를 낮게하기 때문으로 생각할 수 있다. Anodic oxidation processes on HgMnTe surface has been studied in standard aqueous HClO₄(pH:2) solution. The 10㎛ thickness of the anodic oxide layers was measured by SEM. The Composition of the anodic oxide layers are evaluated from current-voltage(I-V) characteristic of HgMnTe Oxidation. The layers are composed of mixed oxide. ??, TeO₄, and?? in HClO₄solution. Transport properties have been investigated in HMT oxide layer made in HClO₄solution and virgin HMT samples at 300K. Hall voltage and magnetoresistance are greater in oxide layer HMT than virgin HMT. As a result, we know that the vacancy of ??in an anodic oxide layer acts as hole and the resulting oxide ?? layer exhibit a reduced degree of charge trapping and increase magnetoresistance.
오재근,손인호,채건식,김영국 경남대학교 환경문제연구소 1993 환경연구 Vol.15 No.-
The energy gap in ZnSe sing1e crystal epilayer have been studied by measuring Transverse Acoustoelectric Voltage(TAV). The energy gap of ZnSe was 2.6eV at room temperature. Trap levels were calculated by Heating rate, Peak shape and Initial rise methods respectively. Also we can calculated cross section of ZnSe.
개선된 Bridgman법으로 성장한 Bi₂Sr₂CaCu₂O_(8+δ) 單結晶의 초전도성
채건식,손인호,설정식,이수대,김영국,전동성,오재근,강성욱 경남대학교 환경문제연구소 1995 환경연구 Vol.17 No.-
The Bi₂Sr₂CaCu₂O_(8)+_(δ) single crystals are grown from the melt using a stoichiometric starting composition fer the cautions. The size and thickness of the Bi₂Sr₂CaCu₂O_(8)+_(δ) crystals depends on the cooling rate. The lower the cooling rate, the bigger and thicker the Bi₂Sr₂CaCu₂O_(8)+_(δ) crystals become. Bi₂Sr₂CaCu₂O_(8)+_(δ) X-ray diffraction(XRD) measurements of the single crystals were carried out using the radiation source of Cu Kα . In these Patterns only the (0,0,2n) diffraction appeared. The result indicated that the cleared surface of the single crystal was of the a-b face, and that the single crystal had a single phase without any undergrowth with 7K and 85K phases. In addition, although the figure is not shown, XRD patterns from (006) to (00□) were observed in the range of 2θ=0 to 60 degrees. The characterization of as-grown single crystals have been analyzed by Laue X-ray backsdattering along the c-axis and X-ray precession experiments. The result of magnetic moment vs Tc in 10 Gauss for a crystals were measurements indicated that the samples have a superconducting transition temperature of 85K.
Mg₂SiO₄: Tb, Nd, Dy 열형광선량계에서 활성제 농도가 Glow Curve에 미치는 영향
노경석,채근식,오재근,김영국,이은숙,설정식,손인호 慶南大學校 附設 基礎科學硏究所 1996 硏究論文集 Vol.8 No.-
The Mg₂SiO₄: Tb, Nd, Dy thermoluminescent phospher has been prepared by sintering Mg₂SiO₄after doping the transition elements Tb, Nd and Dy. The heating rate is 10℃/sec at this thermoluminescent phospher are heated. From the results of this study, the following conclusions were obtained. The maximum peaks are found in the measured Mg₂SiO₄: Tb, Nd, Dy, and TL glow curve at 289℃, 252℃ and 220℃ when the 1wt.% ∼ 5wt.%. Glow curve of TLD increased TL intensity and temperature of peak appears to the high temperature when the heating rate is 10℃/sec∼25℃/sec. The activation energy of the main peak has been estimated by the peak shape method. The estimated activation energies are 1.26 eV, 0.53 eV and 0.80 eV respectively. The thermoluminiscence process in Mg₂SiO₄: Tb, Nd, Dy are found to the 2nd order when the main peak of the glow curve is analyzed by peak shape method. The Mg₂SiO₄: Tb thermoluminescent phosphor is the most sensitive to X-rays among the other materials. The dose responses of Mg₂SiO₄: Tb, Dy TLD are linear up to intensity of X-ray.
Mg₂SiO₄ : La, Ho 열형광선량계에서 활성제 농도가 글로우 커브에 미치는 영향 La, Ho TLD on Activation Concentration
김영국,손인호,채건식,노경석,오재근,이은숙 경남대학교 신소재연구소 1996 論文集 Vol.6 No.-
본 연구에서는 Mg₂SiO₄에 활성화 물질로 La, Ho를 첨가하여 열형광체를 제작하였고 불순물의 농도를 1wt.% ∼5 wt.%까지 변화시키면서 열평광강도의 glow curve를 측정하였다. 도한 열형광체의 glow curve를 peak shape법으로 분석해서 TL특성에 대한 포획 매개변수와 활성화 에너지, 발광차수, 선량의존성등을 조사하였으며, 그 물리적 특성을 조사하고 선량계로서 타당성과 실용성을 확인하였다. The Mg₂SiO₄: La, Ho thermoluminescent phospher has been prepared by sintring Mg₂SiO₄after doping the transition elements La and Ho. The heating rate is 10℃/sec at this thermoluminescent phospher are heated. The maximum peaks are found in the measured Mg₂SiO₄: La and Ho. TL glow curve at 229℃ and 345 C when the 1 wt.%-5 wt.%. The glow curve of TLD increased TL intensity and temperature of peak appears to the high temperature when the heating rate is l0℃/sec-25℃/sec. The activation energy of the main peak has been estimated by the peak shape method. The estimated activation energies are 1.77 eV. 1.52 eV respectively. The thermoluminescence process in Mg₂SiO₄: La and Ho are found to the 2nd order when the main peak of the glow curve is analyzed by peak shape method. The dose responses of Mg₂SiO₄: La and Ho TLD are linear up to intensity of X-ray.